Vishay BAS16D-V Small signal fast switching diode Datasheet

BAS16D-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon epitaxial planar diode
• Fast switching diode
• Also available in case SOT-23 with
designation BAS16
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
17431
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS16D-V
Ordering code
Marking
Remarks
BAS16D-V-GS18 or BAS16D-V-GS08
A6
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
75
V
VRM
100
V
IF
250
mA
t = 1 μs
IFSM
2
A
t = 1 ms
IFSM
1
A
t=1s
IFSM
0.5
Reverse voltage
Peak reverse voltage
Forward current (continuous)
Non-repetitive peak forward
current
Ptot
Power dissipation
1)
350
1)
A
mW
Valid provided electrodes are kept at ambient temperature
Document Number 85723
Rev. 1.3, 17-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
BAS16D-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Tj
150
Maximum junction temperature
Tstg
Storage temperature
1)
Unit
°C
- 65 to 150
1)
°C
Valid provided electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Max.
Unit
IF = 1 mA
VF
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1
V
IF = 150 mA
VF
1.25
V
VR = 25 V, TJ = 150 °C
IR
30
μA
VR = 75 V
IR
1
μA
VR = 75 V, TJ = 150 °C
IR
50
μA
VR = 0; f = 1 MHz
CD
2
pF
IF = 10 mA to IR = 10 mA,
IR = 1 mA, RL = 100 Ω
trr
6
ns
RthJA
3751)
°C/W
Forward voltage
Leakage current
Diode capacitance
Reverse recovery time
Thermal resistance junction to
ambient air
1)
Min.
Typ.
Valid provided electrodes are kept at ambient temperature
Typical Characteristics
Tamb = 25 °C unless otherwise specified
104
103
Tj = 25 °C
5
f = 1 kHz
2
Tj = 100 °C
102
10
5
Tj = 25 °C
10
Rf (Ω)
IF (mA)
3
2
102
5
1
2
10
10
-1
5
2
10- 2
0
1
VF (V)
18105
Figure 1. Forward characteristics
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2
10-2
2
17438
10-1
1
10
102
IF (mA)
Figure 2. Dynamic Forward Resistance vs. Forward Current
For technical questions within your region, please contact one of the following: Document Number 85723
[email protected], [email protected], [email protected]
Rev. 1.3, 17-Aug-10
BAS16D-V
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
0
18186
17441
Figure 3. Admissible Power Dissipation vs.
Ambient Temperature
100
200
Tj (°C)
Figure 5. Leakage Current vs. Junction Temperature
Tj = 25 °C
1.1
f = 1 MHz
CD (VR)
CD (0 V)
1.0
0.9
0.8
0.7
0
2
17440
4
6
8
10
VR (V)
Figure 4. Relative Capacitance vs. Reverse Voltage
18106
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Document Number 85723
Rev. 1.3, 17-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
BAS16D-V
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
Package Dimensions in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.7 (0.067)
3.85 (0.152)
1.40 (0.055)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
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4
For technical questions within your region, please contact one of the following: Document Number 85723
[email protected], [email protected], [email protected]
Rev. 1.3, 17-Aug-10
Legal Disclaimer Notice
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Vishay
Disclaimer
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 12-Mar-12
1
Document Number: 91000
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