POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - [email protected] AZT400HVI HIGH CURRENT PHASE CONTROL THYRISTOR INSULATED MODULE Repetitive voltage up to Mean forward current Surge current 4500 V 411 A 11 kA FINAL SPECIFICATION May 17 - Issue: 3 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 4500 V V RSM Non-repetitive peak reverse voltage 125 4600 V V DRM Repetitive peak off-state voltage 125 4500 V I RRM Repetitive peak reverse current 125 100 mA I DRM Repetitive peak off-state current 125 100 mA I T (AV) Mean forward current 180° sin, 50 Hz, Tc=55°C, double side cooled 609 A I T (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled I TSM Surge forward current CONDUCTING 125 411 A 11 kA I² t I² t Sine wave, 10 ms without reverse voltage V T On-state voltage On-state current = V T(TO) Threshold voltage 125 1,20 V r T On-state slope resistance 125 0,700 mohm 3 605 x 10 1800 A 25 2,66 A²s V SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1050 A; gate 10V, 5W 125 400 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 1000 V/µs t d Gate controlled delay time, typical VD=100V; gate source 25V, 10W , tr=.5 µs 25 t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM Q rr Reverse recovery charge di/dt = -20 A/µs, I= 700 A I rr Peak reverse recovery current VR= 50 V I H Holding current, typical VD=5V, gate open circuit 25 mA I L Latching current, typical VD=5V, tp=30µs 25 mA V GT Gate trigger voltage VD=5V 25 3,50 V I GT Gate trigger current VD=5V 25 400 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation 150 W P G Average gate power dissipation 2 W R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled R th(c-h) Thermal impedance Case to heatsink, double side cooled T j Operating junction temperature 3 350 125 µs µs µC A GATE Pulse width 100 µs MOUNTING F 51,0 °C/kW 20 °C/kW -30 / 125 °C Mounting force 04,0 / 06,0 kN Mass 2800 ORDERING INFORMATION : AZT400HVI S 45 standard specification VRRM/100 g AZT400HVI HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION May 17 - Issue: 3 DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 130 120 110 100 90 80 70 60 50 30° 60° 90° 120° 180° DC 40 0 200 400 600 800 1000 IT(AV) [A] PF(AV) [W] 1600 DC 1400 180° 1200 90° 120° 60° 1000 30° 800 600 400 200 0 0 100 200 300 400 IT(AV) [A] 500 600 700 800 900 AZT400HVI HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION May 17 - Issue: 3 DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 130 120 110 100 90 80 70 60 50 30° 60° 90° 120° 180° 40 0 100 200 300 400 500 600 700 IT(AV) [A] PF(AV) [W] 1600 1400 120° 180° 90° 60° 1200 30° 1000 800 600 400 200 0 0 100 200 300 IT(AV) [A] 400 500 600 700 AZT400HVI HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION May 17 - Issue: 3 FORWARD CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 2000 12 1800 10 1400 8 1200 ITSM [kA] Forward Current [A] 1600 1000 800 6 4 600 400 2 200 0 0 0 1 2 3 1 10 Forward Voltage [V] 100 n° cycles 177 79.5 90 4 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED G-K Terminali A 2.8x0.8 60 104 50 70 Ø6 .5 46 30 58 Zth j-h [°C/kW] 1 2 30 70 3 Ø1 40 V5 80 92 20 K 10 2 0 0,001 0,01 0,1 1 10 G 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 1