WINNERJOIN BD233 Transistor (npn) Datasheet

RoHS
BD233/235/237
BD233/235/237
D
T
,. L
TRANSISTOR (NPN)
TO-126
FEATURES
1. EMITTER
Power dissipation
PCM:
1.25
W (Tamb=25℃)
2. COLLECTOR
Collector current
ICM:
2
A
Collector-base voltage
V(BR)CBO:
BD233 : 45
V
BD235: 60
V
BD237: 100 V
Operating and storage junction temperature range
3. BASE
TJ : 150℃
Tstg: -65℃ to +150℃
R
T
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
O
IC
N
unless otherwise specified)
Symbol
C
E
L
Collector-base breakdown voltage
Test
conditions
BD233
BD235
V(BR)CBO
Ic= 100µA, IE=0
E
J
E
Collector cut-off current
Emitter cut-off current
W
V(BR)CEO
60
V
Ic= 10mA, IB=0
60
V
80
V(BR)EBO
BD233
BD235
UNIT
45
BD237
Emitter-base breakdown voltage
MAX
100
BD233
BD235
MIN
45
BD237
Collector-emitter breakdown voltage
C
O
123
IE= 100µA, IC=0
5
V
VCB= 45V, IE=0
ICBO
BD237
VCB= 60V, IE=0
100
µA
1
mA
0.6
V
VCB= 100V, IE=0
IEBO
VEB= 5V, IC=0
HFE(1)
VCE= 2V, IC=150mA
40
HFE(2)
VCE=2V, IC= 1A
25
VCE(sat)
IC=1A, IB= 100m A
DC current gain
Collector-emitter saturation voltage
Transition frequency
WEJ ELECTRONIC CO.
fT
VCE=10V, Ic=250mA
Http:// www.wej.cn
f =10MHz
3
MHz
E-mail:[email protected]
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