Diode Semiconductor Korea ER1A---ER1J VOLTAGE RANGE: 100 --- 600 V CURRENT: 1.0 A SURFACE MOUNT RECTIFIERS FEATURES DO - 214AC(SMA) Low cost Low leakage Low forward voltage drop 1.5± 0.1 High current capability 2.6± 0.15 4.5± 0.1 Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 5.1± 0.2 2.1± 0.2 MECHANICAL DATA Case:JEDEC DO-214AC,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 0.2± 0.05 0.203MAX 1.3± 0.2 Polarity: Color band denotes cathode Weight: 0.002 ounces,0.064 grams Dimensions in millimeters Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ER1A ER1B ER1C ER1D ER1E ER1G ER1H ER1J UNITS Maximum recurrent peak reverse voltage V RRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage V DC 50 100 150 200 300 400 500 600 V Maximum average forw ard rectified current @T A=75 IF(AV) 1.0 A IFSM 30.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.0A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=125 VF IR 0.95 1.25 5.0 100 1.7 V A Maximum reverse recovery time (Note 1) trr 35 ns Typical junction capacitance (Note 2) CJ 22 pF Typical thermal resistance (Note 3) RθJA 50 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range /W NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. www.diode.kr Diode Semiconductor Korea ER1A---ER1J FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE 0 -0.25A PULSE GENERATOR (NOTE2) -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . 1.0 ER1E ER1G ER1A - ER1D ER1H-ER1J 0.1 TJ=25 Pulse Width=300 µs 0.01 0 0.4 1.2 0.8 1.6 2.4 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 2.0 CURRENT, AMPERES INSTANTANEOUS FORWARD FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 100 60 40 20 10 6 4 2 1 TJ =25 f=1.0MHz 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS 1.0 0.5 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm)Lead length 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES JUNCTION CAPACITANCE,pF FIG.4 -- TYPICAL JUNCTION CAPACITANCE z 30 25 8.3ms Single Half Sine-Wave 20 15 10 5 0 1 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS REVERSE CURRENT, MICROAMPERES FIG.6 -- TYPICAL REVERSE CHARACTERISTICS 1000 TJ=100 100 TJ=75 10 1.0 TJ=25 0.1 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. www.diode.kr