DSK ER1B Surface mount rectifier Datasheet

Diode Semiconductor Korea
ER1A---ER1J
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 1.0 A
SURFACE MOUNT RECTIFIERS
FEATURES
DO - 214AC(SMA)
Low cost
Low leakage
Low forward voltage drop
1.5± 0.1
High current capability
2.6± 0.15
4.5± 0.1
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
5.1± 0.2
2.1± 0.2
MECHANICAL DATA
Case:JEDEC DO-214AC,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
0.2± 0.05
0.203MAX
1.3± 0.2
Polarity: Color band denotes cathode
Weight: 0.002 ounces,0.064 grams
Dimensions in millimeters
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ER1A ER1B ER1C ER1D ER1E ER1G ER1H ER1J UNITS
Maximum recurrent peak reverse voltage
V RRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
V DC
50
100
150
200
300
400
500
600
V
Maximum average forw ard rectified current
@T A=75
IF(AV)
1.0
A
IFSM
30.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=125
VF
IR
0.95
1.25
5.0
100
1.7
V
A
Maximum reverse recovery time (Note 1)
trr
35
ns
Typical junction capacitance
(Note 2)
CJ
22
pF
Typical thermal resistance
(Note 3)
RθJA
50
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
Operating junction temperature range
Storage temperature range
/W
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
www.diode.kr
Diode Semiconductor Korea
ER1A---ER1J
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
0
-0.25A
PULSE
GENERATOR
(NOTE2)
-1.0A
1cm
SET TIME BASE FOR 10/20 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
1.0
ER1E ER1G
ER1A - ER1D
ER1H-ER1J
0.1
TJ=25
Pulse Width=300 µs
0.01
0
0.4
1.2
0.8
1.6
2.4
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
2.0
CURRENT, AMPERES
INSTANTANEOUS FORWARD
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
60
40
20
10
6
4
2
1
TJ =25
f=1.0MHz
0.1 0.2 0.4
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
1.0
0.5
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
0.375"(9.5mm)Lead length
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
JUNCTION CAPACITANCE,pF
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
z
30
25
8.3ms Single Half
Sine-Wave
20
15
10
5
0
1
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE
CURRENT, MICROAMPERES
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
1000
TJ=100
100
TJ=75
10
1.0
TJ=25
0.1
0
20 40
60
80
100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE.
www.diode.kr
Similar pages