FDMS7650 N-Channel PowerTrench® MOSFET 30 V, 100 A, 0.99 mΩ Features General Description Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). MSL1 robust package design Applications Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A 100% UIL tested OringFET RoHS Compliant Synchronous rectifier D D D D G S Top S D 5 4 G D 6 3 S D 7 2 S D 8 1 S Pin 1 S Bottom Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 100 232 (Note 1a) 36 (Note 3) 544 -Pulsed A 200 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7650 Device FDMS7650 ©2012 Fairchild Semiconductor Corporation FDMS7650 Rev.D3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7650 N-Channel PowerTrench® MOSFET January 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 3 V 30 V 15 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1 1.9 -6 mV/°C VGS = 10 V, ID = 36 A 0.8 0.99 VGS = 4.5 V, ID = 32 A 1.1 1.55 VGS = 10 V, ID = 36 A, TJ = 125 °C 1.1 1.7 VDS = 5 V, ID = 36 A 267 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 11250 14965 pF 3050 4055 pF 240 360 pF 1.4 3 Ω 28 45 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 36 A, VGS = 10 V, RGEN = 6 Ω 24 38 ns 83 133 ns 21 34 ns Total Gate Charge VGS = 0 V to 10 V 149 209 nC Qg Total Gate Charge 88 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 36 A 63 Qgs 34 nC Qgd Gate to Drain “Miller” Charge 13 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 36 A (Note 2) 0.8 1.3 IF = 36 A, di/dt = 100 A/μs V 69 97 ns 56 90 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 33 A, VDD = 27 V, VGS = 10 V. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDMS7650 Rev.D3 2 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 200 7 ID, DRAIN CURRENT (A) 160 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V VGS = 4.5 V 120 VGS = 4 V 80 VGS = 3.5 V 40 VGS = 3 V 0 0 0.5 1.0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 VGS = 3 V 5 4 VGS = 3.5 V 3 VGS = 4 V 2 1 VGS = 4.5 V 2.0 0 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 120 160 200 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) 10 ID = 36 A VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 8 ID = 36A 6 4 TJ = 125 oC 2 TJ = 25 oC 0 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 200 200 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 160 ID, DRAIN CURRENT (A) VGS = 10 V 0 VDS = 3 V 120 TJ = 150 oC 80 TJ = 25 oC 40 TJ = -55 oC 0 1 2 3 VGS = 0 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS7650 Rev.D3 100 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 10 20000 ID = 36 A 10000 Ciss CAPACITANCE (pF) 8 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 1000 2 Crss f = 1 MHz VGS = 0 V 100 0.1 0 0 40 80 120 160 Qg, GATE CHARGE (nC) 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 300 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJC = 1.2 C/W TJ = 25 oC 10 TJ = 125 oC 1 -3 10 -2 -1 10 10 1 10 2 200 VGS = 4.5 V 100 Limited by Package 0 25 3 10 VGS = 10 V 10 50 150 1000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 10 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 ms 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 125 oC/W DC o TA = 25 C 0.01 0.01 0.1 1 10 100200 TA = 25 oC 100 10 1 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS7650 Rev.D3 SINGLE PULSE RθJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS7650 Rev.D3 5 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS7650 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS7650 Rev.D3 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMS7650 Rev.D3 7 www.fairchildsemi.com FDMS7650 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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