Diodes SMD Type Silicon PIN Diode BAR64-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage current controlled RF resistor for RF attenuator and swirches +0.1 2.6-0.1 1.0max Freqency range above 1 MHz Low resistance and short carrier lifetime 0.375 0.475 +0.05 0.1-0.02 For frequencies up to 3 GHz Absolute M axim um Ratings Ta = 25 Sym bol Value Unit Reverse voltage Param eter VR 200 V Forward current IF 100 mA P tot 250 mW Tj 150 Total Power dissipation 25 TS Junction tem perature Operating tem perature range T op -55 to +150 Storage tem perature range T stg -55 to +150 Junction - soldering point 1) R thJA K/W 450 Note: 1.Package m ounted on alum ina 15m m x 16.7m m x 0.7m m Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage V(BR) Forward voltage VF Diode capacitance CT Forward resistance rf Charge carrier life time rr Series inductance Ls Conditions Min IR = 5 200 A Typ Max Unit 1.1 V pF V VR = 20 V, f = 1 MHz VR = 0 V, f = 100 MHz 0.23 0.35 IF = 1 mA, f = 100 MHz 12.5 20 IF = 10 mA, f = 100 MHz 2.1 3.8 IF = 100 mA, f = 100 MHz 0.85 1.35 IF = 10 mA, IR = 6 mA,IR = 3mA 1.55 2 s nH Marking Marking 2 www.kexin.com.cn 1