AP9962AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 40V RDS(ON) 20mΩ ID G 32A S Description AP9962A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D TO-220(P) S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage +20 V ID@TC=25℃ CDrain Current, VGS @ 10V 32 A ID@TC=100℃ Drain Current, VGS @ 10V 20 A 1 IDM Pulsed Drain Current 120 A PD@TC=25℃ Total Power Dissipation 27.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 4.5 ℃/W 62 ℃/W 1 201501133 AP9962AGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 40 - - V VGS=10V, ID=20A - - 20 mΩ VGS=4.5V, ID=16A - - 30 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=20A - 40 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=20A - 12 20 nC Qgs Gate-Source Charge VDS=32V - 2.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7.8 - nC td(on) Turn-on Delay Time VDS=20V - 7 - ns tr Rise Time ID=20A - 46 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 20 - ns tf Fall Time RD=1.0Ω - 6 - ns Ciss Input Capacitance VGS=0V - 820 1800 pF Coss Output Capacitance VDS=25V - 95 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Min. Typ. IS=32A, VGS=0V - - 1.2 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9962AGP-HF 100 80 10 V 7.0 V T C = 25 o C 10V 7.0V o T C = 1 50 C ID , Drain Current (A) ID , Drain Current (A) 80 5.0 V 60 4.5 V 40 . 5.0V 60 4.5V 40 V G = 3.0 V 20 20 V G = 3.0 V 0 0 0 1 2 3 4 0 5 Fig 1. Typical Output Characteristics 3 4 5 6 2.0 I D =16A I D =20A V G =10V 26 22 . Normalized RDS(ON) T C =25 o C RDS(ON) (mΩ ) 2 Fig 2. Typical Output Characteristics 30 18 1.6 1.2 0.8 14 0.4 2 4 6 8 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 16 1.6 12 1.2 T j =25 o C Normalized VGS(th) T j =150 o C IS(A) 1 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 8 4 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9962AGP-HF f=1.0MHz 12 1000 800 V DS = 20 V V DS = 24 V V DS = 32 V 8 C iss C (pF) VGS , Gate to Source Voltage (V) I D = 20 A 10 6 600 400 4 200 2 C oss C rss 0 0 0 4 8 12 16 20 24 28 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1000 10 100us 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse . Normalized Thermal Response (R thjc) 1 100 ID (A) 9 V DS ,Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9962AGP-HF MARKING INFORMATION 9962AGP Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5