AON3816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. AON3816 and AO3816L are electrically identical. -RoHS Compliant -AO3816L is Halogen Free VDS (V) = 20V ID = 4A (VGS = 4.5V) RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 23mΩ (VGS = 4V) RDS(ON) < 28mΩ (VGS = 2.5V) ESD Protected D2 D1 DFN 3x3 Top View Bottom View S2 G2 D2 D2 S1 D1 D1 G1 G1 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A F Pulsed Drain Current TA=70°C ID IDM B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C TJ, TSTG Symbol Maximum Junction-to-Ambient Steady State Alpha & Omega Semiconductor, Ltd. Steady State Units 20 V ±12 V 4 4 4 4 A 20 PD TA=70°C 10 Sec RθJA RθJL 2.4 1.4 1.5 0.9 -55 to 150 Typ 43 80 33 Max 52 90 50 W °C Units °C/W °C/W °C/W www.aosmd.com AON3816 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250µA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 TJ=55°C Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 1.1 V A 22 29 VGS=4V, ID=4A 15 19 23 mΩ VGS=2.5V, ID=4A 17 22.5 28 mΩ 1 V 3 A VDS=5V, ID=4A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 0.75 18 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg V 23 Forward Transconductance Crss µA 14 VSD Output Capacitance µA 18 TJ=125°C gFS Coss 5 10 VGS=4.5V, ID=4A IS Units V VDS=20V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=4A 21 0.75 mΩ S 1315 pF 219 pF 183 2.1 pF kΩ 15 nC 6.7 nC Qgd Gate Drain Charge 4.6 tD(on) Turn-On DelayTime 1 nC µs tr Turn-On Rise Time 2.8 µs tD(off) Turn-Off DelayTime 5.6 µs tf Turn-Off Fall Time 5.9 µs VGS=5V, VDS=10V, RL=2.5Ω, RGEN=3Ω 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The continuous current rating is limited by wire-bonding. Rev 2: Feb 15. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V VDS=5V 4V VGS =2V 15 2.5V ID(A) ID(A) 20 10 125°C VGS =1.5V 10 5 25°C 0 0 0 1 2 3 4 5 0.0 0.5 VDS(Volts) 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics 35 Normalize ON-Resistance 1.6 30 RDS(ON)(mΩ) -40°C VGS =2.5V 25 VGS =4V 20 VGS =4.5V 15 10 VGS=2.5V ID=4A 1.4 VGS=4V 1.2 VGS=4.5V 1.0 0.8 0 5 10 15 20 -50 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1E+01 ID=4A 1E+00 125°C 1E-01 IS(A) RDS(ON)(mΩ) 25 125°C 20 -40°C 1E-02 1E-03 15 25°C 25°C 1E-04 1E-05 10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON3816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 5 VDS=10V 2000 ID=4A Capacitance (pF) VGS(Volts) 4 3 2 Coss 1500 1000 1 500 0 0 Ciss Crss 0 5 10 15 0 20 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 40 10µs RDS(ON) limited 100µ 1ms 1.0 10ms DC 0.1 0.1s 1s TJ(Max)=150°C TA=25°C 0.0 0.01 0.1 TJ(Max)=150°C TA=25°C 30 Power (W) 10.0 ID (Amps) 5 20 10 10s 1 VDS (Volts) 10 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton single pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com