BCW30LT1G General Purpose Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −32 Vdc Collector − Base Voltage VCBO −32 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −100 mAdc Symbol Value Unit Collector Current − Continuous 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic 1 Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 SOT−23 (TO−236AB) CASE 318−08 STYLE 6 mW 225 1.8 mW/°C RqJA 556 °C/W MARKING DIAGRAM PD 300 mW C2 M G G 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1 C2 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BCW30LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 2 1 Publication Order Number: BCW30LT1/D BCW30LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IE = 0) V(BR)CEO −32 − Vdc Collector−Emitter Breakdown Voltage (IC = −100 mAdc, VEB = 0) V(BR)CES −32 − Vdc Collector−Base Breakdown Voltage (IC = −10 mAdc, IC = 0) V(BR)CBO −32 − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc − − −100 −10 nAdc mAdc 215 500 − − −0.3 −0.6 −0.75 − 7.0 − 10 OFF CHARACTERISTICS Collector Cutoff Current (VCB = −32 Vdc, IE = 0) (VCB = −32 Vdc, IE = 0, TA = 100°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −2.0 mAdc, VCE = −5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) VCE(sat) Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) VBE(on) Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = −10 Vdc, f = 1.0 MHz) Cobo Noise Figure (IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) pF NF dB TYPICAL NOISE CHARACTERISTICS (VCE = − 5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 mA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 mA 3.0 100 mA 300 mA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 mA 1.0 0.7 0.5 100 mA 30 mA 0.3 0.2 1.0 10 mA 0.1 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 10k 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 2 5.0k 10k BCW30LT1G NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = − 5.0 Vdc, TA = 25°C) 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 5.0 dB 10 1.0M 500k 500 700 1.0k 5.0 dB 10 Figure 3. Narrow Band, 100 Hz RS , SOURCE RESISTANCE (OHMS) 1.0M 500k 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF + 20 log10 20k 10k 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 ƫ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 5.0k 2.0k 1.0k 500 ƪ 500 700 1.0k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 BCW30LT1G TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 500 TJ = 125°C 25°C 300 -55°C 200 180 BCW29LT1 VCE = 1.0 V VCE = 10 V 160 140 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 100 1.0 TA = 25°C BCW29LT1 IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 200 mA 150 mA 40 100 mA 20 20 50 mA 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/ °C) 1.2 V, VOLTAGE (VOLTS) 40 Figure 8. Collector Characteristics TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 250 mA 60 0 5.0 10 1.4 0.2 350 mA 300 mA Figure 7. Collector Saturation Region 0.1 IB = 400 mA 50 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 - 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 100 25°C to 125°C Figure 9. “On” Voltages qVB for VBE 0.2 - 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients http://onsemi.com 4 50 100 BCW30LT1G TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 100 70 50 tf 30 td @ VBE(off) = 0.5 V 20 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 12. Turn−Off Time 500 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V 300 Cib C, CAPACITANCE (pF) f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 11. Turn−On Time 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance 20 VCE = -10 Vdc f = 1.0 kHz TA = 25°C hoe, OUTPUT ADMITTANCE ( m mhos) hfe ≈ 300 @ IC = -1.0 mA 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 200 10 hie , INPUT IMPEDANCE (k Ω ) VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 30 20 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 300 @ IC = 1.0 mA 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 15. Input Impedance 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance http://onsemi.com 5 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) BCW30LT1G 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) • RqJA TJ(pk) - TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 17. Thermal Response DESIGN NOTE: USE OF THERMAL RESPONSE DATA 104 IC, COLLECTOR CURRENT (nA) VCC = 30 V A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 17 by the steady state value RqJA. 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 Example: The BCW29LT1 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 10-1 10-2 -4 0 -2 0 0 The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) For more information, see AN−569. Figure 18. Typical Collector Leakage Current http://onsemi.com 6 BCW30LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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