DSR520CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR520CT High-Speed Switching Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 32 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 200 mA IFSM 1 A Power dissipation P 150* mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C Maximum (peak) reverse voltage Surge current (10 ms) +0.02 0.38 -0.03 0.05±0.03 0.65 1.0±0.05 Low reverse current: IR = 5 μA (max) 0.25±0.03 0.25±0.03 • CATHODE MARK 0.6±0.05 0.5±0.03 0.05±0.03 CST2 JEDEC ― JEITA ― TOSHIBA 1-1P1A Weight: 0.7 mg (typ.) * Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit VF (1) ― VF (2) Min Typ. Max IF = 1 mA ― 0.21 ― ― IF = 10 mA ― 0.28 0.39 VF (3) ― IF = 200 mA ― 0.52 0.6 Reverse current IR ― VR = 30 V ― ― 5 μA Total capacitance CT ― VR = 0, f = 1 MHz ― 18 ― pF Forward voltage Test Condition Equivalent Circuit (top view) Unit V Marking 86 1 2009-10-01 DSR520CT Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2 2009-10-01 DSR520CT I F -V F I R -V R 1000 ） REVERSE CURRENT IＲ (μA (uA) FORWARD CURRENT I F (mA) 1000 100 Ta=100℃ 10 75℃ 50℃ 1 25℃ 0.1 0℃ -25℃ 0.01 0.001 Ta=100℃ 100 75℃ 10 50℃ 25℃ 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 FORWARD VOLTAGE VF (V) 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) C T - VR TOTAL CAPACITANCE CＴ (pF) 100 f=1MHz Ta=25℃ 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 3 2009-10-01 DSR520CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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