AP10P10GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
S
▼ Fast Switching Characteristic
D
▼ RoHS Compliant & Halogen-Free
SOT-223
BVDSS
-100V
RDS(ON)
500mΩ
ID
- 1.65A
G
Description
D
AP10P10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 100
V
+20
V
Continuous Drain Current
3
- 1.65
A
Continuous Drain Current
3
-1.3
A
-6
A
2.78
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
45
℃/W
1
201211021
AP10P10GK-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-100
-
-
V
VGS=-10V, ID=-1.5A
-
-
500
mΩ
VGS=-4.5V, ID=-1A
-
-
600
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-1.5A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-1.5A
-
5.5
8.8
nC
Qgs
Gate-Source Charge
VDS=-50V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
7.3
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=-10V
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
440
704
pF
Coss
Output Capacitance
VDS=-25V
-
45
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Rg
Gate Resistance
f=1.0MHz
-
15
30
Ω
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-1A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10P10GK-HF
4
8
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
6
4
3
2
1
2
0
0
0
2
4
6
0
8
2
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
2.4
440
I D = -1.5 A
V G =-10V
I D = -1 A
T A =25 o C
2.0
Normalized RDS(ON)
420
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
400
380
360
1.6
1.2
20
0.8
340
0.4
2
4
6
8
10
-50
50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
3
1.2
Normalized -VGS(th)
4
T j =150 o C
0
o
-V GS , Gate-to-Source Voltage (V)
-IS (A)
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
T A =150 o C
-ID , Drain Current (A)
o
T A =25 C
T j =25 o C
2
1
0.8
0.4
0
0.0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10P10GK-HF
f=1.0MHz
10
610
490
8
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -1.5A
V DS = -50V
6
370
4
250
2
130
0
10
0
4
8
C oss
C rss
1
12
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
100us
1ms
-ID (A)
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 120℃/W
DC
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2
VG
-ID , Drain Current (A)
1.6
QG
-4.5V
1.2
QGS
QGD
0.8
0.4
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4