DTC114YM / DTC114YE / DTC114YUA DTC114YKA / DTC114YSA Transistors Digital transistors (built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA / DTC114YSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !Equivalent circuit OUT R1 IN R2 GND OUT IN GND !Structure NPN digital transistor (Built-in resistor types) !External dimensions (Units : mm) DTC114YM DTC114YE 1.2 0.8 1.6±0.2 1.0±0.1 0.2 0.5 0.5 +0.1 0.2−0.05 0.8 (2) (3) 0.4 0.4 1.2 0.32 0.2 0.7±0.1 +0.1 0.2−0.05 0.55±0.1 (1) IN (2) GND (3) OUT ROHM : VMT3 Abbreviated symbol : 64 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 0~0.1 Abbreviated symbol : 64 2.8±0.2 (2) 1.6+0.2 −0.1 (3) (1) GND (2) IN (3) OUT ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions Abbreviated symbol : 64 4±0.2 2±0.2 ROHM : SPT EIAJ : SC-72 3Min. 3±0.2 (15Min.) 5 0.15 0.45+ −0.05 0.4 2.5 + −0.1 (1) (2) (3) 0.5 0~0.1 0.15 0.45 + −0.05 (1) GND (2) OUT (3) IN 0.3Min. 2.1±0.1 1.25±0.1 (1) 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions DTC114YSA (1) GND (2) IN (3) OUT (2) (3) ROHM : UMT3 EIAJ : SC-70 0.15±0.05 Abbreviated symbol : 64 0.7±0.1 0.2 0~0.1 2.9±0.2 0.9±0.1 1.3±0.1 0.65 0.65 (1) +0.1 0.3 −0.05 ROHM : EMT3 DTC114YKA 2.0±0.2 0.1Min. DTC114YUA (3) 0.1Min. 0.15Max. (2) 0.8±0.1 0.13 0~0.1 0.5 0.22 (1) 1.6±0.2 (1) (1) GND (2) IN (3) OUT DTC114YM / DTC114YE / DTC114YUA DTC114YKA / DTC114YSA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Limits(DTC114Y Symbol M E UA ) Unit KA SA Supply voltage VCC 50 V Input voltage VIN −6~+40 V IO 70 IC(Max.) 100 Output current mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 150 200 300 mW !Electrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 1.4 − − VO(on) − 0.1 0.3 V II − − 0.88 mA VI=5V Input current Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=1mA IO/II=5mA/0.25mA IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 68 − − − VO=5V, IO=5mA Input resistance R1 7 10 13 kΩ Resistance ratio R2/R1 3.7 4.7 5.7 − fT − 250 − MHz Output current Transition frequency − − VCE=10V, IE=−5mA, f=100MHz ∗ Transition frequency of the device !Packaging specifications Type Package VMT3 EMT3 UMT3 SMT3 SPT Packaging type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − DTC114YM DTC114YE − DTC114YUA − − DTC114YKA − − − DTC114YSA − − − − − ∗ DTC114YM / DTC114YE / DTC114YUA DTC114YKA / DTC114YSA Transistors !Electrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 500 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current VO=5V 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0