isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUF405AXI DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7.5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3 A IBM Base Current-peak 4.5 A PC Collector Power Dissipation @TC=25℃ 39 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.2 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUF405AXI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 0.9 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.1 V ICER Collector Cutoff Current VCE= VCEV; RBE= 5Ω VCE= VCEV; RBE= 5Ω;TC=100℃ 0.1 0.5 mA ICEV Collector Cutoff Current VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ 0.1 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA B B MIN TYP. MAX UNIT 450 V 7 V Switching Times ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2.5A;IB1= 0.25A;VCC= 50V; VBB= -5V, RBB= 2.4Ω;L= 1mH Vclamp= 400V 0.8 μs 0.05 μs