APT5016BLL APT5016SLL 500V 30A 0.160Ω R POWER MOS 7 MOSFET D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5016BLL-SLL UNIT 500 Volts Drain-Source Voltage 30 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 329 Watts Linear Derating Factor 2.63 W/°C PD TJ,TSTG 120 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 30 (Repetitive and Non-Repetitive) 1 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 15A) TYP MAX Volts 0.160 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 11-2003 Characteristic / Test Conditions 050-7005 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT5016BLL- SLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 600 Reverse Transfer Capacitance f = 1 MHz 60 VGS = 10V 72 VDD = 250V 16 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 30A @ 25°C tf 10 VDD = 250V ID = 30A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 14 INDUCTIVE SWITCHING @ 25°C 6 256 VDD = 333V, VGS = 15V ID = 30A, RG = 5Ω 172 INDUCTIVE SWITCHING @ 125°C 6 ns 27 RG = 1.6Ω Fall Time nC 10 VGS = 15V Turn-off Delay Time pF 42 RESISTIVE SWITCHING Rise Time td(off) UNIT 2833 VGS = 0V 3 MAX µJ 476 VDD = 333V, VGS = 15V ID = 30A, RG = 5Ω 215 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 30 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -30A, dl S/dt = 100A/µs) 540 ns Q Reverse Recovery Charge (IS = -30A, dl S/dt = 100A/µs) 7.36 µC rr dv/ dt Peak Diode Recovery dv/ 120 (Body Diode) 1.3 (VGS = 0V, IS = -30A) dt Amps Volts 8 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.38 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.89mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -30A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.30 0.7 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7005 Rev C 11-2003 0.40 0.35 0.3 0.10 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 t1 t2 SINGLE PULSE 0.1 10-5 10-4 °C/W 40 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5016BLL - SLL 80 8V 0.0174 Power (watts) 0.00401F 0.143 0.00641F 0.219 0.158F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (°C) 15 &10V 7.5V 60 7V 40 6.5V 20 6V 5.5V Case temperature. (°C) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 60 40 TJ = +125°C 20 TJ = -55°C TJ = +25°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 GS 1.15 1.1 VGS=10V 1.05 VGS=20V 1.0 0.95 0.9 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT D 1.00 0.95 0.90 0.85 -50 = 15A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.05 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 11-2003 I V 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO V = 10V @ 15A 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 050-7005 Rev C ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 Typical Performance Curves 100µS 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 5,000 OPERATION HERE LIMITED BY RDS (ON) Ciss 1,000 Coss 100 Crss 1mS TC =+25°C TJ =+150°C SINGLE PULSE 1 10mS 10 16 I = 30 D 14 VDS=100V 12 10 VDS=250V VDS=400V 8 6 4 2 0 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) APT5016BLL - SLL 10,000 120 0 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 50 TJ =+150°C TJ =+25°C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 60 V td(off) G 50 50 = 333V DD R = 5Ω T = 125°C J 40 V DD R G = 5Ω T = 125°C J 30 L = 100µH td(on) 0 0 10 20 30 40 50 0 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT ID (A) FIGURE 14, DELAY TIMES vs CURRENT 1000 V DD R G 1200 = 333V I 1000 J 800 10 V = 5Ω T = 125°C L = 100µH SWITCHING ENERGY (µJ) SWITCHING ENERGY (µJ) tr 10 0 11-2003 30 20 20 10 050-7005 Rev C tf 40 = 333V tr and tf (ns) td(on) and td(off) (ns) L = 100µH EON includes diode reverse recovery. 600 Eon 400 200 Eoff DD D 20 = 333V = 30A T = 125°C J Eoff L = 100µH EON includes 800 diode reverse recovery. 600 Eon 400 200 0 0 0 10 20 30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT5016BLL - SLL Gate Voltage 10 % 90% TJ = 125 C Gate Voltage td(on) d(off) tr Drain Voltage Drain Current 90% 90% 5% T = 125 C J td(off) t 5% tf 10 % 10% 0 Drain Voltage Switching Energy Drain Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 IC V DD V CE G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7005 Rev C 0.46 (.018) 0.56 (.022) {3 Plcs} 11-2003 3.50 (.138) 3.81 (.150)