APTM120DA15 Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 150mΩ max @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features • G2 S2 0/VBUS • • • 0/VBUS OUT Benefits • • • • S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 60 45 240 ±30 150 1250 22 50 3000 Unit V A V mΩ W A July, 2004 VBUS Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120DA15– Rev 0 Q2 APTM120DA15 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min 1200 VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 30A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Typ 3 Min VGS = 10V VBus = 600V ID = 60A Typ 20.6 3.08 0.52 748 Unit V 400 2000 150 5 ±250 mΩ V nA Max Unit µA nF nC 480 20 15 45 3.96 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2Ω 6.26 mJ 2.74 mJ 3.43 Min Tj = 125°C Typ 60 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 1200 Tj = 125°C 4000 Tc = 70°C ns 160 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 60A, R G = 1.2Ω Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt = 200A/µs IF = 60A VR = 800V di/dt = 200A/µs Max 96 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 60A R G = 1.2Ω Tf VF Test Conditions VGS = 0V, ID = 1mA Max Unit A 2.5 V ns nC July, 2004 IDSS Characteristic Drain - Source Breakdown Voltage X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM120DA15– Rev 0 Symbol BVDSS APTM120DA15 Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.9 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM120DA15– Rev 0 July, 2004 Package outline APTM120DA15 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 200 160 7V 6.5V 120 80 6V 40 5.5V 5 10 15 20 25 240 200 160 120 TJ=25°C 80 40 5V 0 0 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 VGS=20V 0.9 0.8 60 50 40 30 20 10 0 0 40 80 120 ID, Drain Current (A) 160 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2004 RDS(on) Drain to Source ON Resistance VGS=10V 1.1 1 3 70 Normalized to VGS =10V @ 30A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 APT website – http://www.advancedpower.com 4–6 APTM120DA15– Rev 0 I D, Drain Current (A) VGS =15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=30A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by RDS on 100 1ms 10ms 10 Single pulse TJ =150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 I D=60A TJ=25°C 12 10 V DS=240V VDS=600V 8 V DS =960V 6 4 2 0 0 160 320 480 640 800 960 Gate Charge (nC) July, 2004 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–6 APTM120DA15– Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120DA15 APTM120DA15 Delay Times vs Current t d(off) VDS=800V RG=1.2Ω T J=125°C L=100µH 150 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG=1.2Ω T J=125°C L=100µH 90 60 40 tr 20 t d(on) 30 0 0 20 40 60 80 100 120 140 20 40 I D, Drain Current (A) 140 14 VDS=800V RG=1.2Ω TJ=125°C L=100µH 10 8 Eon Switching Energy (mJ) Switching Energy (mJ) 60 80 100 120 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 Eoff 6 4 2 0 20 40 60 80 100 120 12 10 V DS=800V ID=60A T J=125°C L=100µH Eoff 8 Eon 6 4 2 0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75 140 ID, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 200 Frequency (kHz) tf 150 ZCS V DS=800V D=50% R G=1.2Ω T J=125°C T C=75°C 100 50 ZVS Hard switching 0 15 25 35 45 ID, Drain Current (A) 55 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120DA15– Rev 0 July, 2004 5 100