ADPOW APTM120DA15 Boost chopper mosfet power module Datasheet

APTM120DA15
Boost chopper
MOSFET Power Module
VDSS = 1200V
RDSon = 150mΩ max @ Tj = 25°C
ID = 60A @ Tc = 25°C
Application
VBUS
•
•
•
CR1
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
OUT
Features
•
G2
S2
0/VBUS
•
•
•
0/VBUS
OUT
Benefits
•
•
•
•
S2
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
60
45
240
±30
150
1250
22
50
3000
Unit
V
A
V
mΩ
W
A
July, 2004
VBUS
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120DA15– Rev 0
Q2
APTM120DA15
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
1200
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 30A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Typ
3
Min
VGS = 10V
VBus = 600V
ID = 60A
Typ
20.6
3.08
0.52
748
Unit
V
400
2000
150
5
±250
mΩ
V
nA
Max
Unit
µA
nF
nC
480
20
15
45
3.96
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 60A, R G = 1.2Ω
6.26
mJ
2.74
mJ
3.43
Min
Tj = 125°C
Typ
60
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
470
Tj = 25°C
1200
Tj = 125°C
4000
Tc = 70°C
ns
160
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 60A, R G = 1.2Ω
Test Conditions
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 800V
di/dt = 200A/µs
IF = 60A
VR = 800V
di/dt = 200A/µs
Max
96
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 60A
R G = 1.2Ω
Tf
VF
Test Conditions
VGS = 0V, ID = 1mA
Max
Unit
A
2.5
V
ns
nC
July, 2004
IDSS
Characteristic
Drain - Source Breakdown Voltage
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6
APTM120DA15– Rev 0
Symbol
BVDSS
APTM120DA15
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.1
0.9
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM120DA15– Rev 0
July, 2004
Package outline
APTM120DA15
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
320
200
160
7V
6.5V
120
80
6V
40
5.5V
5
10
15
20
25
240
200
160
120
TJ=25°C
80
40
5V
0
0
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
280
ID, Drain Current (A)
TJ=125°C
30
0
ID, DC Drain Current (A)
4
5
6
7
8
9
VGS=20V
0.9
0.8
60
50
40
30
20
10
0
0
40
80
120
ID, Drain Current (A)
160
25
50
75
100
125
150
TC, Case Temperature (°C)
July, 2004
RDS(on) Drain to Source ON Resistance
VGS=10V
1.1
1
3
70
Normalized to
VGS =10V @ 30A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
APT website – http://www.advancedpower.com
4–6
APTM120DA15– Rev 0
I D, Drain Current (A)
VGS =15, 10 & 8V
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=30A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by RDS on
100
1ms
10ms
10
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
I D=60A
TJ=25°C
12
10
V DS=240V
VDS=600V
8
V DS =960V
6
4
2
0
0
160
320
480
640
800
960
Gate Charge (nC)
July, 2004
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM120DA15– Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120DA15
APTM120DA15
Delay Times vs Current
t d(off)
VDS=800V
RG=1.2Ω
T J=125°C
L=100µH
150
60
120
tr and tf (ns)
td(on) and td(off) (ns)
Rise and Fall times vs Current
80
180
V DS=800V
RG=1.2Ω
T J=125°C
L=100µH
90
60
40
tr
20
t d(on)
30
0
0
20
40
60
80
100
120
140
20
40
I D, Drain Current (A)
140
14
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
10
8
Eon
Switching Energy (mJ)
Switching Energy (mJ)
60
80
100
120
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
Eoff
6
4
2
0
20
40
60
80
100
120
12
10
V DS=800V
ID=60A
T J=125°C
L=100µH
Eoff
8
Eon
6
4
2
0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75
140
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
250
200
Frequency (kHz)
tf
150
ZCS
V DS=800V
D=50%
R G=1.2Ω
T J=125°C
T C=75°C
100
50
ZVS
Hard
switching
0
15
25
35
45
ID, Drain Current (A)
55
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM120DA15– Rev 0
July, 2004
5
100
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