SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BC868 ISSUE 4 - OCTOBER 1995 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC869 PARTMARKING DETAILS– E C BC868 - CAC BC868-16 - CCC BC868-25 - CDC B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb =25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 25 TYP. MAX. V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 20 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µA Collector Cut-Off Current ICBO 10 1 µA mA VCB = 25V VCB = 25V,Tamb =150oC Emitter Cut-Off Current IEBO 10 µA VEB=5V Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VCE(sat) 0.5 V IC=1A, IB=100mA* VBE(on) 1.0 V IC=1A, VCE=1V* Static Forward Current Transfer Ratio hFE BC868-16 BC868-25 50 85 60 100 160 IC=5mA, VCE=10V* IC=500mA, VCE=1V* IC=1A, VCE=1V* IC=500mA, VCE=1V* IC=500mA, VCE=1V* 375 250 375 Transition Frequency fT 60 MHz IC=10mA, VCE=5V f = 35MHz Output Capacitance Cobo 45 pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT449 datasheet. 3 - 11