BCD AZ494AMTR Pulse-width-modulation control circuit Datasheet

Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
General Description
Features
The AZ494A/C is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control.
·
The AZ494A/C consists of a reference voltage circuit,
two error amplifiers, an on-chip adjustable oscillator, a
dead-time control (DTC) comparator, a pulse-steering
control flip-flop, and an output control circuit. The precision of voltage reference (VREF) is improved up to ±
1% through trimming and this provides a better output
voltage regulation. The AZ494A/C provides for pushpull or single-ended output operation, which can be
selected through the output control.
The difference between AZ494A and AZ494C is that
they have 4.95V and 5V reference voltage respectively.
The AZ494A/C is available in standard packages of
DIP-16 and SOIC-16.
·
·
·
·
·
AZ494A/C
Stable 4.95V/5V Reference Voltage Trimmed to
±1.0% Accuracy
Uncommitted Output TR for 200mA Sink or
Source Current
Single-End or Push-Pull Operation Selected by
Output Control
Internal Circuitry Prohibits Double Pulse at Either
Output
Complete PWM Control Circuit with Variable
Duty Cycle
On-Chip Oscillator with Master or Slave Operation
Applications
·
·
·
SMPS
Back Light Inverter
Charger
DIP-16
SOIC-16
Figure 1. Package Types of AZ494A/C
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
1
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Pin Configuration
M/P Package
(SOIC-16/DIP-16)
1IN +
1
16
2IN +
1IN -
2
15
2IN -
FEEDBACK
3
14
REF
DTC
4
13
OUTPUT CTRL
CT
5
12
VCC
RT
6
11
C2
GND
7
10
E2
C1
8
9
E1
Figure 2. Pin Configuration of AZ494A/C (Top View)
Output Function Control Table
Signal for Output Control
Output Function
VI = GND
Single-ended or parallel output
VI = VREF
Normal push-pull operation
Functional Block Diagram
OUTPUT CTRL
RT
CT
6
5
Pulse-Steering
Flip-Flop
Dead-Time Control
Comparator
DTC
9
+
Error Amplifier 1
1IN -
1
+
11
CK
2IN -
FEEDBACK
E1
C2
Q2
+
10
PWM
Comparator
E2
2
12
2IN +
C1
Q1
D
4
0.12V
1IN +
8
13
Oscillator
16
Error Amplifier 2
+
14
Reference
Regulator
15
0.7mA
7
VCC
REF
GND
3
Figure 3. Functional Block Diagram of AZ494A/C
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
2
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Ordering Information
AZ494
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Blank: Tube
Package
M: SOIC-16
P: DIP-16
Reference Voltage
A: 4.95V
C: 5.0V
Package
Temperature
Range
SOIC-16
-40 to 85oC
DIP-16
Part Number
Tin Lead
Marking ID
Lead Free
Tin Lead
Lead Free
Packing Type
AZ494AM
AZ494AM-E1
AZ494AM
AZ494AM-E1
Tube
AZ494AMTR
AZ494AMTR-E1
AZ494AM
AZ494AM-E1
Tape & Reel
AZ494CM
AZ494CM-E1
AZ494CM
AZ494CM-E1
Tube
AZ494CMTR
AZ494CMTR-E1
AZ494CM
AZ494CM-E1
Tape & Reel
AZ494AP
AZ494AP-E1
AZ494AP
AZ494AP-E1
Tube
AZ494CP
AZ494CP-E1
AZ494CP
AZ494CP-E1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
3
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Supply Voltage (Note 2)
VCC
40
V
Amplifier Input Voltage
VI
-0.3 to VCC + 0.3
V
Collector Output Voltage
VO
40
V
Collector Output Current
IO
250
mA
Package Thermal Impedance
(Note 3)
RθJA
M Package
73
P Package
67
Lead Temperature 1.6mm from case for 10 seconds
C/W
oC
260
TSTG
Storage Temperature Range
o
o
-65 to 150
ESD rating (Machine Model)
C
200
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings"for extended periods may affect device reliability.
Note 2: All voltage values are with respect to the network ground terminal.
Note 3: Maximum power dissipation is a function of TJ(max), RθJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA )/RθJA. Operating at the absolute maximum TJ
of 150oC can affect reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Symbol
Min
Typ
Max
Unit
VCC
7
15
36
V
30
36
V
200
mA
VCC - 2
V
Collector Output Voltage
VC1, VC2
Collector Output Current
(Each Transistor)
IC1, IC2
Amplifier Input Voltage
VI
Current Into Feedback Terminal
IFB
0.3
mA
Reference Output Current
IREF
10
mA
0.3
Timing Capacitor
CT
0.00047
0.001
10
µF
Timing Resistor
RT
1.8
30
500
KΩ
Oscillator Frequency
fosc
1.0
40
200
KHz
PWM Input Voltage (Pin 3, 4, 14)
Operating Free-Air Temperature
0.3
TA
-40
5.3
V
85
oC
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
4
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Electrical Characteristics
TA = 25oC, VCC=20V, f=10KHz unless otherwise noted.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
4.90
4.95
5.0
V
IREF=1mA, TA= -40 to 85 C
4.85
4.95
5.05
V
IREF=1mA
4.95
5.0
5.05
V
IREF=1mA, TA= -40 to 85oC
4.9
5.0
5.1
V
Reference Section
IREF=1mA
Output Reference Voltage
for AZ494A
VREF
Output Reference Voltage
for AZ494C
VREF
Line Regulation
RLINE
VCC = 7V to 36V
2
25
mV
Load Regulation
RLOAD
IREF=1mA to 10mA
1
15
mV
35
50
mA
Short-Circuit Output Current
ISC
o
VREF = 0V
10
Oscillator Section
CT=0.001µF, RT=30KΩ,
Oscillator Frequency
fOSC
CT=0.01µF, RT=12KΩ
9.2
CT=0.01µF, RT=12KΩ,
TA= -40 to 85oC
Frequency Change with Temperature
∆f /∆T
40
10
9.0
10.8
KHz
12
CT=0.01µF, RT=12KΩ,
TA= -40 to 85oC
1
%
-10
µA
Dead-Time Control Section
Input Bias Current
Maximum Duty Cycle
Input Threshold Voltage
IBIAS
D(MAX)
VITH
VCC=15V, V4= 0 to 5.25V
VCC=15V, V4= 0V,
Pin 13= VREF
-2
45
Zero Duty Cycle
Maximum Duty Cycle
%
3
3.3
0
V
Error-Amplifier Section
Input Offset Voltage
VIO
V3 = 2.5V
2
10
mV
Input Offset Current
IIO
V3 = 2.5V
25
250
nA
Input Bias Current
IBIAS
V3 = 2.5V
0.2
1
µA
Common-Mode Input Voltage Range
VCM
VCC=7V to 36V
VCC-2
V
Open-Loop Voltage Gain
GVO
VO =0.5V to 3.5V
Unity-Gain Bandwidth
BW
Common-Mode Rejection Ratio
Output Sink Current (Feedback)
Output Source Current (Feedback)
CMRR
ISINK
ISOURCE
VID = -15mV to -5V,
V3 = 0.7V
VID=15mV to 5V
V3 = 3.5V
-0.3
70
95
dB
650
KHz
65
80
dB
-0.3
-0.7
mA
2
mA
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
5
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Electrical Characteristics (Continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
4
4.5
V
PWM Comparator Section
Input Threshold Voltage
VITH
Zero duty cycle
Input Sink Current
ISINK
V3 = 0.7V
-0.3
-0.7
mA
Output Section
Common
Emitter
VCE
(SAT)
VE = 0V, IC =200mA
1.1
1.3
Emitter
Follower
VCC
(SAT)
VCC = 15V,
IE = -200mA
1.5
2.5
Collector Off-State Current
IC (OFF)
VCE = 36V, VCC=36V
2
100
µA
Emitter Off-State Current
IE(OFF)
VCC = VC = 36V, VE = 0
-100
µA
ICC
Pin 6 = VREF, VCC=15V
6
10
mA
Output Saturation Voltage
V
Total Device
Supply Current
Output Switching Characteristics
Rise Time
tR
Common Emitter
Common Collector
100
200
ns
Fall Time
tF
Common Emitter
Common Collector
25
100
ns
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
6
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Parametr Measurement information
VCC = 20V
12
VCC
4
Test
Inputs
3
12KΩ 6
5
DTC
C1
FEEDBACK
E1
RT
C2
E2
CT
0.01uF 1
8
150Ω
4W
150Ω
4W
Output 1
9
11
Output 2
10
1IN+
2
1IN-
16
2IN+
15
2IN-
13
OUTPUT
CTRL
GND
50KΩ
REF
14
7
Test Circuit
Voltage
at C1
VCC
Voltage
at C2
VCC
0V
0V
Voltage
at CT
Threshold Voltage
DTC
0V
Threshold Voltage
FEEDBACK
0.7V
Duty Cycle
0%
MAX
0%
Voltage Waveforms
Figure 4. Operational Test Circuit and Waveforms
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
7
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Parametr Measurement information (Continued)
Amplifier Under Test
+
VI
FEEDBACK
+
Vref
Other Amplifier
Figure 5. Error Amplifier Characteristics
20V
68Ω
4W
Each Output
Circuit
tf
Output
tr
90%
90%
CL = 15pF
(See Note A)
10%
10%
Note A: CL includes probe and jig capacitance.
Figure 6. Common-Emitter Configuration
20V
Each Output
Circuit
90%
90%
Output
CL = 15pF
(See Note A)
10%
10%
68Ω
4W
tr
tf
Note A: CL includes probe and jig capacitance.
Figure 7. Emitter-Follower Configuration
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
8
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Typical Performance Characteristics
VCC=20V
f - Oscillator Frequency (Hz)
100k
O
TA=25 C
0.001µF
10k
0.01µF
0.1µF
1k
1k
10k
100k
1M
RT - Timing Resistance (Ω)
Figure 8. Oscillator Frequency vs. RT and CT
100
VCC=20V
∆VO=3V
90
Voltage Gain (dB)
80
o
TA=25 C
70
60
50
40
30
20
10
0
1
10
100
1k
10k
100k
1M
Frequency (Hz)
Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
9
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Typical Applications
(VI=10V to 40V)
1mH
2A
KSA1010
VI(+)
(VO=5V, IO=1A)
VO
47
12
11
VCC
C1
2
FEED
BACK
1IN-
2IN1IN+
2IN+
DTC GND
4
7
E1
9
OUTPUT
CONTROL
13
E2
10
14
REF
AZ494A
+ 50µ
50V
5.1k
3
8
C2
1M
0.1µ
150
RT
6
47k
15
+
5.1k
5.1k
1
16
CT
150
5
+
50µ
10V
50µ +
10V
0.001µ
GND
0.1
VI(-)
Figure 10. Pulse Width Modulated Step-Down Converter
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
10
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Mechanical Dimensions
SOIC-16
1.350(0.053)
1.750(0.069)
7°
0.330(0.013)
0.510(0.020)
Unit: mm(inch)
1.250(0.049)
1.650(0.065)
7°
B
A
20:1
0.250(0.010)
0.400(0.016)
9.800(0.386)
10.200(0.402)
0°
8°
R0.200(0.008)
R0.200(0.008)
0.050(0.002)
0.250(0.010)
0.170(0.007)
0.250(0.010)
5.800(0.228)
6.240(0.246)
3.800(0.150)
4.040(0.159)
9 .5
°
8°
8°
0.200(0.008)
Sφ1.000(0.039)
Depth 0.200(0.008)
8°
A
0.400(0.016)×45°
C-C
50:1
B
20:1
C
3°
7°
0.200(0.008)
0.250(0.010)
1.000(0.039)
1.270(0.050)
BSC
1.270(0.050)
C
Note: Eject hole, oriented hole and mold mark is optional.
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
11
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494A/C
Mechanical Dimensions (Continued)
DIP-16
Unit: mm(inch)
Note: Eject hole, oriented hole and m old mark is optional.
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 4
12
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788
Similar pages