Philips Semiconductors Product specification Dual rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated, high efficiency rectifier diodes in a plastic envelope featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general, where both low conduction losses and low switching losses are essential. PINNING - SOT93 PIN BYV74 series QUICK REFERENCE DATA SYMBOL PARAMETER BYV74Repetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) Reverse recovery time VRRM VF IO(AV) trr PIN CONFIGURATION MAX. MAX. MAX. UNIT 300 300 400 400 500 500 V 1.12 30 1.12 30 1.12 30 V A 60 60 60 ns SYMBOL DESCRIPTION tab 1 Anode 1 (a) 2 Cathode (k) 3 Anode 2 (a) tab Cathode (k) a2 3 a1 1 k2 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 136˚C IO(AV) Average output current (both diodes conducting)1 IO(RMS) IFRM IFSM I2t Tstg Tj RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode. I2t for fusing Storage temperature Operating junction temperature CONDITIONS MIN. - MAX. -300 300 300 300 -400 400 400 400 UNIT -500 500 500 500 V V V square wave; δ = 0.5; Tmb ≤ 94 ˚C sinusoidal; a = 1.57; Tmb ≤ 98 ˚C - 30 A - 27 A - 43 A t = 25 µs; δ = 0.5; Tmb ≤ 94 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) t = 10 ms - 30 A - 150 160 A A -40 - 112 150 150 A2s ˚C ˚C 1 Neglecting switching and reverse current losses. For output currents in excess of 20 A, connection should be made to the exposed metal mounting base. August 1996 1 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient per diode both diodes conducting in free air. Rth j-a MIN. TYP. MAX. UNIT - 45 2.4 1.4 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.95 1.08 1.15 10 0.3 1.12 1.25 1.36 50 0.8 V V V µA mA MIN. TYP. MAX. UNIT - 40 60 nC - 50 60 ns - 4.2 5.2 A - 2.5 - V STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage (per diode) IR Reverse current (per diode) IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs trr Irrm Vfr August 1996 2 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast I dI F BYV74 series 20 F t 15 I R 114 4 100% 10% s rrm 10 126 5 138 0 0 5 150 15 10 IF(AV) / A Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.1. Definition of trr, Qs and Irrm I 2.2 2.8 rr time I Tmb(max) / C 102 a = 1.57 1.9 Vo = 0.89 Rs = 0.0137 dt Q BYV44 PF / W trr / ns 1000 F IF=20 A 100 1A time V F 10 V V Tj = 25 C Tj = 100 C fr F 1 1 Fig.2. Definition of Vfr 30 Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode Tmb(max) / C 88 BYV44 PF / W Vo = 0.8900 V Rs = 0.0137 Ohms 10 Irrm / A D = 1.0 90 25 IF= 20 A 0.5 20 1 102 0.2 15 IF=1A 114 0.1 10 I tp D= tp T 0.1 126 Tj = 25 C Tj = 100 C 138 5 T 0 100 10 dIF/dt (A/us) time 0 5 10 15 IF(AV) / A 20 t 0.01 150 25 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x √D. August 1996 10 -dIF/dt (A/us) 100 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per diode 3 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast 50 BYV74 series Zth (K/W) BYV74 IF / A 10 Tj = 25 C Tj = 150 C 40 1 30 typ max 20 0.1 D tp 10 t 0 0 0.5 1 VF / V 1.5 0.01 10 us 2 tp / s 0.1 10 s Fig.9. Transient thermal impedance per diode Zth j-mb= f(tp) Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj 1000 1 ms Qs / nC IF = 20 A 100 2A 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C; per diode August 1996 4 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74 series MECHANICAL DATA Dimensions in mm 15.2 max 14 Net Mass: 5 g 4.6 max 13.6 2 max 4.25 4.15 2 4.4 21 max 12.7 max 2.2 max 0.5 min dimensions within this zone are uncontrolled 1 2 5.5 13.6 min 3 1.15 0.95 0.5 M 0.4 1.6 11 Fig.10. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". August 1996 5 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 6 Rev 1.200