AP9620AGM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D D ▼ Lower On-resistance D D SO-8 S S -20V RDS(ON) 21mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS G -9A S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -20 V +8 V 3 -9 A 3 -7.1 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -40 A PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 50 ℃/W 1 201408222 AP9620AGM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-9A - - 21 mΩ VGS=-2.5V, ID=-6A - - 35 mΩ -0.3 -0.6 -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-9A - 33 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA 2 Qg Total Gate Charge ID=-9A - 26 42 nC Qgs Gate-Source Charge VDS=-10V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9 - nC 2 td(on) Turn-on Delay Time VDS=-10V - 12 - ns tr Rise Time ID=-1A - 18 - ns td(off) Turn-off Delay Time RG=3.3Ω - 78 - ns tf Fall Time VGS=-5V - 57 - ns Ciss Input Capacitance VGS=0V - 2200 3520 pF Coss Output Capacitance VDS=-15V - 270 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 250 - pF Rg Gate Resistance f=1.0MHz - 4.7 9.4 Ω Min. Typ. IS=-2.1A, VGS=0V - - -1.2 V . Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-9A, VGS=0V, - 41 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9620AGM-HF 40 40 -5.0V -4.5V -3.5V -2.5V V G = - 2.0V -ID , Drain Current (A) 30 T A = 150 o C -ID , Drain Current (A) o T A = 25 C 20 10 30 20 10 0 0 0 1 2 3 4 0 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 28 I D = -6 A T A =25 ℃ I D = -9 A V G =- 4.5 V 1.8 24 22 . Normalized RDS(ON) 26 RDS(ON) (mΩ ) -5.0V -4.5V -3.5V -2.5V V G = - 2.0V 1.6 1.4 1.2 1.0 20 0.8 18 0.6 0.4 16 1 2 3 4 5 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 1.6 I D =-250uA Normalized -VGS(th) (V) 1.4 -IS(A) 6 4 T j =150 o C T j =25 o C 2 1.2 1 0.8 0.6 0.4 0.2 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9620AGM-HF 8 2400 C iss 6 2000 C (pF) -VGS , Gate to Source Voltage (V) f=1.0MHz 2800 I D = -9A V DS = -10V 4 1600 1200 800 2 C oss C rss 400 0 0 0 10 20 30 40 1 50 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 -ID (A) 10 100us 1ms 10ms 1 . 100ms 1s 0.1 T A =25 o C Single Pulse DC Normalized Thermal Response (R thja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9620AGM-HF MARKING INFORMATION Part Number 9620AGM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 5