HP AT-41400 Up to 6 ghz low noise silicon bipolar transistor chip Datasheet

Up to 6 GHz Low Noise Silicon
Bipolar Transistor Chip
Technical Data
AT-41400
Features
• Low Noise Figure:
1.6 dB Typical at 2.0␣ GHz
3.0 dB Typical at 4.0␣ GHz
• High Associated Gain:
14.5 dB Typical at 2.0␣ GHz
10.5 dB Typical at 4.0␣ GHz
• High Gain-Bandwidth
Product:
9.0 GHz Typical fT
Description
Hewlett-Packard’s AT-41400 is a
general purpose NPN bipolar
transistor chip that offers excellent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigitated
geometry yields an intermediate
sized transistor with impedances
that are easy to match for low
noise and moderate power applications. This device is designed for
use in low noise, wideband
amplifier, mixer and oscillator
applications in the VHF, UHF, and
microwave frequencies. An
optimum noise match near 50␣ Ω at
1 GHz , makes this device easy to
use as a low noise amplifier.
Chip Outline
The AT-41400 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
4-99
5965-8922E
AT-41400 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Absolute
Maximum[1]
1.5
20
12
60
500
200
-65 to 200
Units
V
V
V
mA
mW
°C
°C
Part Number Ordering Information
Part Number
Devices Per Tray
AT-41400-GP4
100
Thermal Resistance [2,4]:
θjc = 95°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 10.5 mW/°C for
TMOUNTING SURFACE > 153°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ. Max.
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
dB
12.0
6.5
P1 dB
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 25 mA
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
19.0
18.5
15.0
10.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
dB
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
4-100
dB
1.3
1.6
3.0
18.5
14.5
10.5
dB
GHz
—
µA
µA
pF
9.0
30
150
0.17
300
0.2
1.0
AT-41400 Typical Performance, TA = 25°C
15
GA
18
14
8
9
6
6
4
NF50 Ω
3
NFO
0
0.5
1.0
2.0
2
GAIN (dB)
12
13
4
4V
6V
10 V
3
2
NFO
2.0 GHz
GA
10
4.0 GHz
8
4.0 GHz
10
20
30
2.0 GHz
0
10
IC (mA)
20
30
IC (mA)
20
35
MSG
P1dB
2.0 GHz
12
GA (dB)
25
16
20
15
|S21E|2
4.0 GHz
8
MAG
10
G1dB
1.0 GHz
16
30
|S21E|2 GAIN (dB)
2.0 GHz
4.0 GHz
40
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
40
20
11
2.0 GHz
8
4.0 GHz
4
5
4
0
0
10
20
30
40
IC (mA)
Figure 4. Output Power and 1 dB
Compressed Gain vs. Collector
Current. VCE = 8 V.
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
4-101
2
0
40
Figure 2. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
24
6
4
NFO
1
0
FREQUENCY (GHz)
P1 dB (dBm)
12
12
0
3.0 4.0 5.0
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
G1 dB (dB)
4V
GA
NF (dB)
GAIN (dB)
15
14
GAIN (dB)
21
16
10 V
6V
0
0
10
20
30
40
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
NFO (dB)
16
NFO (dB)
24
AT-41400 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.73
-39
28.3
25.84
159
0.5
.60
-121
22.2
12.91
113
1.0
.57
-156
17.2
7.27
94
1.5
.56
-172
13.7
4.84
84
2.0
.57
176
11.4
3.71
77
2.5
.57
170
9.5
2.97
71
3.0
.60
164
8.0
2.52
64
3.5
.60
157
6.8
2.18
61
4.0
.61
152
5.5
1.89
55
4.5
.63
147
4.7
1.72
51
5.0
.63
144
3.7
1.53
46
5.5
.65
139
3.1
1.42
42
6.0
66
136
2.1
1.28
38
dB
-39.2
-30.2
-28.0
-26.4
-24.9
-23.6
-22.3
-20.9
-20.1
-18.7
-17.8
-17.0
-16.1
S12
Mag.
.011
.031
.040
.048
.057
.066
.077
.090
.099
.116
.129
.141
.156
Ang.
75
48
51
59
66
69
72
77
79
81
80
82
83
Mag.
.94
.61
.50
.47
.46
.46
.45
.47
.47
.47
.48
.49
.50
S22
dB
-40.9
-32.8
-29.6
-26.9
-24.7
-23.1
-21.6
-20.4
-19.3
-18.1
-17.3
-16.5
-15.7
S12
Mag.
.009
.023
.033
.045
.058
.070
.083
.096
.108
.124
.136
.150
.165
Ang.
69
56
65
72
75
78
79
82
83
84
83
85
84
Mag.
.87
.49
.42
.41
.41
.40
.40
.41
.42
.42
.43
.42
.44
Ang.
-12
-28
-25
-25
-24
-26
-28
-29
-30
-36
-40
-44
-47
AT-41400 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.56
-60
31.8
39.07
152
0.5
.54
-145
23.5
15.00
104
1.0
.54
-170
18.1
8.03
90
1.5
.55
179
14.5
5.30
82
2.0
.56
170
12.1
4.04
76
2.5
.56
165
10.2
3.24
72
3.0
.58
159
8.8
2.75
65
3.5
.59
154
7.5
2.37
62
4.0
.60
149
6.3
2.06
57
4.5
.61
145
5.4
1.87
53
5.0
.62
142
4.5
1.67
49
5.5
.64
137
3.8
1.54
44
6.0
.65
134
2.9
1.40
41
A model for this device is available in the DEVICE MODELS section.
AT-41400 Noise Parameters: VCE = 8 V, IC = 10 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
RN/50
0.1
0.5
1.0
2.0
4.0
1.2
1.2
1.3
1.6
3.0
.12
.10
.06
.24
.52
3
15
27
163
-153
0.17
0.17
0.16
0.16
0.18
4-102
S22
Ang.
-18
-28
-23
-22
-23
-23
-25
-26
-28
-33
-36
-40
-45
AT-41400 Chip Dimensions
30 µm
DIA
1.18 mil
Base Pad
90 µm
3.54 mil
250 µm
9.8 mil
Emitter Pad
250 µm
9.8 mil
Note: Die thickness is 5 to 6 mil.
4-103
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