AC857BQ-AC857CQ PNP SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data The AC857BQ-AC857CQ Bipolar Junction Transistors (BJT) are designed to meet the stringent requirements of Automotive Applications. Features Case: SOT23 Case Material: Molded Plastic, ―Green‖ Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Ideally Suited for Automatic Insertion Complementary NPN Types: AC847BQ-AC847CQ For Switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) C C SOT23 B B E Top View Device Symbol E Top View Pin-Out Ordering Information (Notes 4 & 5) Notes: Product Compliance Marking Reel Size (inches) Quantity per Reel AC857BQ-7 AC857CQ-7 Automotive Automotive 2C6 2C7 7 7 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 Date Code Key Year Code Month Code 2016 D 2017 E YM XXX XXX = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M or M = Month (ex: 9 = September) 2018 F 2019 G 2020 H Jan Feb Mar Apr May Jun Jul 1 2 3 4 5 6 7 AC857BQ-AC857CQ Document Number: DS39359 Rev. 3 - 2 1 of 7 www.diodes.com 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D April 2017 © Diodes Incorporated AC857BQ-AC857CQ Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Emitter Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IEM IBM Value -50 -45 -5.0 -100 -200 -200 -200 Unit V V V mA mA mA mA Value 310 350 403 357 350 -65 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RθJA RθJL TJ,TSTG mW °C/W °C/W °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 15mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. AC857BQ-AC857CQ Document Number: DS39359 Rev. 3 - 2 2 of 7 www.diodes.com April 2017 © Diodes Incorporated AC857BQ-AC857CQ Thermal Resistance ( C/W) 0.4 400 350 o Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 300 250 200 150 100 D=0.1 Single Pulse D=0.2 50 0 100μ 100µ D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) o Temperature ( C) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) D=0.5 10 o Single Pulse. T A=25 C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation AC857BQ-AC857CQ Document Number: DS39359 Rev. 3 - 2 3 of 7 www.diodes.com April 2017 © Diodes Incorporated AC857BQ-AC857CQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min -50 -45 -5 Typ — — — Collector Cutoff Current ICBO — — Collector Emitter Cutoff Current Emitter-Base Cutoff Current ICES IEBO hFE — — — — — — — — — — 220 420 Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) — Base-Emitter Turn-On Voltage (Note 10) VBE(ON) -600 — Base-Emitter Saturation Voltage (Note 10) VBE(SAT) — Output Capacitance Cobo Transition Frequency Noise Figure Small Signal Current Gain (Note 10) Input Impedance (Note 10) Output Admittance (Note 10) Reverse Voltage Transfer Ratio (Note 10) DC Current Gain (Note 10) Note: AC857BQ AC857CQ AC857BQ AC857CQ AC857BQ AC857CQ AC857BQ AC857CQ AC857BQ AC857CQ Unit V V V nA µA nA nA — — — 330 600 4.5 8.7 30 60 2x10-4 3x10-4 290 520 -75 -250 -650 — -700 -850 3 Max — — — -15 -4 -15 -100 — — — — — — — — 475 800 -300 -650 -750 -820 — -1100 — fT 100 200 — MHz NF — 2 10 dB hfe hie hoe hre Test Condition IC = -10µA IC = -10mA IE = -1µA VCB = -30V VCB = -30V, TJ = +150°C VCE = -50V VEB = -5V — kΩ µS IC = -2.0mA, VCE = -5V f = 1.0kHz — — mV mV mV pF IC = -2.0mA, VCE = -5V IC = - 10mA, IB = -0.5mA IC = - 100mA, IB = -5.0mA IC = -2mA, VCE = -5V IC = -10mA, VCE = -5V IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5mA VCB = -10V, f = 1.0MHz VCE = -5V, IC = -10mA, f = 100MHz VCE = -5V, IC = -200µA RS = 2kΩ, f = 1kHz ∆f = 200Hz 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. AC857BQ-AC857CQ Document Number: DS39359 Rev. 3 - 2 4 of 7 www.diodes.com April 2017 © Diodes Incorporated AC857BQ-AC857CQ Typical Electrical Characteristics 0.5 TA = 150°C hFE, DC CURRENT GAIN N IA G T 100 N E R R U C C D , E 10 F h VCE = 5V R E T T I M E R O T C E L L O C , T) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1,000 (@TA = +25°C, unless otherwise specified.) )V ( E G A T L O V N O IT A R U AT SA ( S E C V TA = 25°C TA = -50°C IC IB = 10 0.4 0.3 TA = 25°C 0.2 TA = 150°C 0.1 TA = -50°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 1 Typical DC Current Gain vs. Collector Current 1 0 0.1 1,000 10 100 1 IC , COLLECTOR CURRENT (mA) Figure 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current ft, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 VCE = 5V 100 10 1 100 10 IC, COLLECTOR CURRENT (mA) Figure 3 Gain-Bandwidth Product vs Collector Current AC857BQ-AC857CQ Document Number: DS39359 Rev. 3 - 2 5 of 7 www.diodes.com April 2017 © Diodes Incorporated AC857BQ-AC857CQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 AC857BQ-AC857CQ Document Number: DS39359 Rev. 3 - 2 6 of 7 www.diodes.com April 2017 © Diodes Incorporated AC857BQ-AC857CQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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