Semipower DS215W Surface mount schottky barrier rectifier Datasheet

DS22W THRU DS220W
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 2.0A
PINNING
PIN
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: DS22W
---S22
DS24W
---S24
DS26W
---S26
DS28W
---S28
DS210W ---S210
DS212W ---S212
DS215W ---S215
DS220W ---S220
Simplified outline SOD-123FL and symbol
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
Parameter
DS22W
DS24W
DS26W
DS28W
DS210W
DS212W
DS215W
DS220W
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
20
40
60
80
100
120
150
200
V
Maximum RMS voltage
V RMS
14
28
42
56
70
84
105
140
V
Maximum DC Blocking Voltage
V DC
20
40
60
80
100
120
150
200
V
Maximum Average Forward Rectified Current
I F(AV)
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I FSM
Max Instantaneous Forward Voltage at 2 A
Maximum DC Reverse Current
T a = 25°C
at Rated DC Reverse Voltage
T a =100°C
Typical Junction Capacitance
(1)
Typical Thermal Resistance
(2)
Operating Junction Temperature Range
Storage Temperature Range
VF
50
0.55
40
0.70
0.85
80
220
A
0.95
0.3
3
0.5
5
IR
Cj
A
2.0
V
mA
pF
RθJA
85
°C/W
Tj
-55 ~ +150
°C
T stg
-55 ~ +150
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2016 Rev 1.0
Page 1 of 3
DS22W THRU DS220W
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
Instaneous Reverse Current ( μA)
Fig.1 Forward Current Derating Curve
10 4
DS22W/DS24W
DS26W-DS220W
10 1
T J =25°C
10 0
40
20
0
60
80
100
Percent of Rated Peak Reverse Voltage(%)
Fig.3 Typical Forward Characteristic
Fig.4 Typical Junction Capacitance
500
10
1.0
DS22W/DS24W
DS26W/DS28W
DS210W/DS212W
DS215W/DS220W
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
50
DS22W/DS24W
20
DS26W-DS220W
10
10
1
0.1
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.6- Typical Transient Thermal Impedance
DS22W-DS28W
50
DS210W-DS220W
40
30
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
T J =25°C
200
1.8
60
10
Junction Capacitance ( pF)
20
10
100
Transient Thermal Impedance( °C /W)
Instaneous Forward Current (A)
T J =75°C
10 2
Case Temperature (°C)
Peak Forward Surage Current (A)
T J =100°C
10 3
200
100
10
1
0.01
Number of Cycles at 60Hz
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
0.1
1
10
100
t, Pulse Duration(sec)
2016 Rev 1.0
Page 2 of 3
DS22W THRU DS220W
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123FL
∠ALL ROUND
C
A
∠ALL ROUND
VM
D
E
A
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.1
0.20
2.9
1.9
1.1
0.9
3.8
min
0.9
0.12
2.6
1.7
0.8
0.7
3.5
max
43
7.9
114
75
43
35
150
min
35
4.7
102
67
31
28
138
UNIT
mm
∠
7°
The recommended mounting pad size
2.0
(79)
Marking
1.2
(47)
1.2
(47)
1.2
(47)
g
pad
e
E
A
pad
HE
Unit: mm
(mil)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Type number
Marking code
DS22W
S22
DS24W
S24
DS26W
S26
DS28W
S28
DS210W
S210
DS212W
S212
DS215W
S215
DS220W
S220
2016 Rev 1.0
Page 3 of 3
Similar pages