APT43M60B2 APT43M60L 600V, 43A, 0.16Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT43M60B2 APT43M60L Single die MOSFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 43 Continuous Drain Current @ TC = 100°C 27 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1200 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 21 A 1 160 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 780 RθJC Junction to Case Thermal Resistance 0.16 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 8-2006 Typ Rev B Min Characteristic 050-8070 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 600 ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance TJ = 125°C 0.57 0.14 4 -10 0.16 5 100 500 ±100 Min f = 1MHz Co(er) 5 Effective Output Capacitance, Energy Related Typ Max 42 5890 90 800 VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related Unit V V/°C Ω V mV/°C µA nA Unit S pF 420 VGS = 0V, VDS = 0V to 400V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tf VGS = 0V Test Conditions VDS = 50V, ID = 21A 4 td(off) TJ = 25°C Max TJ = 25°C unless otherwise specified Co(cr) tr VDS = 600V Typ VGS = ±30V Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Reference to 25°C, ID = 250µA VGS = 10V, ID = 21A 3 APT43M60B2_L Current Rise Time Turn-Off Delay Time 220 215 45 90 48 55 145 44 VGS = 0 to 10V, ID = 21A, VDS = 300V Resistive Switching VDD = 400V, ID = 21A RG = 4.7Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage ISD = 21A, TJ = 25°C, VGS = 0V trr Reverse Recovery Time ISD = 21A 3 Qrr Reverse Recovery Charge Peak Recovery dv/dt Typ Max Unit 100 A G VSD dv/dt Min D 200 S diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 21A, di/dt ≤1000A/µs, VDD = 400V, TJ = 125°C 1 700 15.2 V ns µC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 5.44mH, RG = 4.7Ω, IAS = 21A. 050-8070 Rev B 8-2006 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 160 V GS = 10V ID, DRIAN CURRENT (A) TJ = 25°C 60 40 50 6V 40 30 20 5.5V 10 TJ = 150°C TJ = 125°C 0 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 5V 4.5V 0 NORMALIZED TO 2.0 1.5 1.0 0.5 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 100 TJ = -55°C 80 TJ = 25°C 60 TJ = 125°C 40 20 0 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 80 0 10 8 6 4 2 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 70 TJ = -55°C 60 C, CAPACITANCE (pF) TJ = 25°C 50 TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 40 30 20 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 600 500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 120V 10 VDS = 300V 8 6 VDS = 480V 4 2 300 250 200 150 100 50 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 100 ID = 21A 14 0 10 50 90 80 70 60 TJ = 25°C 50 40 TJ = 150°C 30 20 10 0 1.2 1.0 0.8 0.6 0.4 0.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 8-2006 0 ISD, REVERSE DRAIN CURRENT (A) 0 Rev B gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 140 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 160 VGS = 10V @ 21A 2.5 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics Figure 1, Output Characteristics 3.0 = 7&8V GS 050-8070 ID, DRAIN CURRENT (A) 100 20 V 60 120 80 T = 125°C J TJ = -55°C 140 0 APT43M60B2_L 70 200 APT43M60B2_L 200 100 100 I I DM ID, DRAIN CURRENT (A) 10 13µs Rds(on) 100µs 1ms 1 10ms 0.1 TJ = 125°C TC = 75°C 1 10 13µs 100µs Rds(on) 10ms Scaling for Different Case & Junction 100ms Temperatures: ID = ID(T = 25 C)*(TJ - TC)/125 DC line ° 100ms DC line 0.1 1ms TJ = 150°C TC = 25°C 1 C 800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 1 TC (°C) TJ (°C) 0.0873 0.0734 Dissipated Power (Watts) ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ZEXT ID, DRAIN CURRENT (A) DM 0.241 0.0184 Figure 11, Transient Thermal Impedance Model 0.16 D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.18 0.06 0.3 t2 0.04 t1 = Pulse Duration t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.1 0.02 0 t1 0.05 10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 10-5 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 8-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8070 Rev B Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 1.0