AVAGO ATF-36077-TR1 2â 18 ghz ultra low noise pseudomorphic hemt Datasheet

ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Description
Features
AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­
morphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducing the sensitivity of noise performance to
variations in input imped­ance match, making the design of
broadband low noise ampli­fiers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite (DBS) Television systems, C-band Television Receive
Only (TVRO) LNAs, or other low noise amplifiers operating
in the 2‑18 GHz frequency range.
• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Para­sitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
25
77 Package
20
Ga
NOISE FIGURE (dB)
1.2
Pin Configuration
4
15
0.8
10
NF
0.4
0
0
4
8
ASSOCIATED GAIN (dB)
• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
[1]
12
16
20
FREQUENCY (GHz)
SOURCE
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA.
1
GATE
360
ATF-36077 fig 1
2
3
DRAIN
SOURCE
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride passivation assure rugged, reliable devices.
Note: 1. See Noise Parameter Table.
ATF-36077 Absolute Maximum Ratings
Symbol Parameter
Units
Absolute
Maximum[1]
VDS
Drain – Source Voltage
V
+3
VGS
Gate – Source Voltage
V
-3
VGD
Gate-Drain Voltage
V
-3.5
ID
Drain Current
mA
Idss
PT
Total Power Dissipation[3]
mW
180
RF Input Power
dBm
+10
Pin max
Tch
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance[2,3]: θch-c = 60°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Measured at Pdiss = 15 mW and Tch = 100°C.
3. Derate at 16.7 mW/°C for TC > 139°C.
ATF-36077 Electrical Specifications,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions
Figure[1]
NF
Noise
GA
Gain at NF[1]
Units
Min.
Typ.
Max.
0.6
f = 12.0 GHz
dB
0.5
f = 12.0 GHz
dB
11.0
12.0
gm
Transconductance
VDS = 1.5 V, VGS = 0 V
mS
50
55
Idss
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
15
25
45
V
-1.0
-0.35
-0.15
Units
Typ.
Vp 10 %
Pinch-off Voltage
VDS = 1.5 V, IDS = 10% of Idss
Note:
1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
ATF-36077 Characterization Information,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions
NF
Noise Figure (Tuned Circuit)
f = 4 GHz
f = 12 GHz
dB
dB
0.3[2]
0.5
GA
Gain at Noise Figure (Tuned Circuit)
f = 4 GHz
f = 12 GHz
dB
dB
17
12
S12 off
Reverse Isolation
P1dB
Output Power at 1 dB Gain Compression
VGS 10 mA
Gate to Source Voltage for IDS = 10 mA
Note:
2. See noise parameter table.
f = 12 GHz, VDS = 1.5 V, VGS = -2 V
dB
14
f = 4 GHz
f = 12 GHz
dBm
dBm
5
5
VDS = 1.5 V
V
-0.2
ATF-36077 Typical Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
S12 S22
Mag.
Ang.
Mag.
Ang.
1.0
0.99
-17
14.00
5.010
163
-36.08
0.016
78
0.60
-14
2.0
0.97
-33
13.81
4.904
147
-30.33
0.030
66
0.59
-28
3.0
0.94
-49
13.53
4.745
132
-27.25
0.043
54
0.57
-41
4.0
0.90
-65
13.17
4.556
116
-25.32
0.054
43
0.55
-54
5.0
0.86
-79
12.78
4.357
102
-24.04
0.063
33
0.53
-66
6.0
0.82
-93
12.39
4.162
88
-23.17
0.069
24
0.50
-78
7.0
0.78
-107
12.00
3.981
75
-22.58
0.074
16
0.48
-89
8.0
0.75
-120
11.64
3.820
62
-22.17
0.078
8
0.46
-99
9.0
0.72
-133
11.32
3.682
49
-21.90
0.080
1
0.44
-109
10.0
0.69
-146
11.04
3.566
37
-21.71
0.082
-6
0.42
-119
11.0
0.66
-159
10.81
3.473
25
-21.57
0.083
-13
0.40
-129
12.0
0.63
-172
10.63
3.401
13
-21.44
0.085
-19
0.38
-139
13.0
0.61
175
10.50
3.349
1
-21.32
0.086
-25
0.37
-149
14.0
0.60
161
10.41
3.315
-12
-21.19
0.087
-32
0.35
-160
15.0
0.58
147
10.36
3.296
-24
-21.04
0.089
-39
0.33
-171
16.0
0.57
131
10.34
3.289
-37
-20.87
0.091
-47
0.31
177
17.0
0.56
114
10.34
3.289
-50
-20.69
0.092
-55
0.29
164
18.0
0.57
97
10.35
3.291
-64
-20.53
0.094
-65
0.26
148
ATF-36077 Typical “Off ” Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, VGS = -2 V
Freq. S11
GHz
Mag.
Ang.
dB
S21
Mag.
Ang.
dB
S21 S22
Mag.
Ang.
Mag.
Ang.
11.0
0.96
-139
-14.2
0.19
-43
-14.2
0.19
-43
0.97
-125
12.0
0.95
-152
-14.0
0.20
-56
-14.0
0.20
-56
0.97
-137
13.0
0.94
-166
-13.8
0.20
-69
-13.8
0.20
-68
0.96
-149
ATF-36077 Typical Noise Parameters,
25
Rn /Zo
-
1
0.30
0.95
12
0.40
2
0.30
0.90
25
0.20
4
0.30
0.81
51
0.17
6
0.30
0.73
76
0.13
8
0.37
0.66
102
0.09
10
0.44
0.60
129
0.05
12
0.50
0.54
156
0.03
14
0.56
0.48
-174
0.02
16
0.61
0.43
-139
0.05
18
0.65
0.39
-100
0.09
20
GAIN (dB)
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq.
Fmin[1] Γopt
GHz
dB
Mag.
Ang.
MSG MAG
15
S21
10
5
0
0
8
4
4
SOURCE
360
.51
(0.020)
1
GATE
Figure 2. Maximum Available Gain, Maximum Stable Gain and
Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA.
ATF-36077 fig 2
Part Number
No. of Devices
Container
ATF-36077-TRl[2]
1000
100
7" Reel
strip
ATF-36077-STR
Note:
2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in “Communications Components” Designer‘s Catalog.
3
DRAIN
2
1.78
(0.070)
1.75
(0.069)
1.22
(0.048)
.53
(0.021)
20
Part Number Ordering Information
1.02
(0.040)
SOURCE
16
FREQUENCY (GHz)
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that
will be encountered when matching to the optimum reflection coefficient (Γopt) at these
frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at 2 GHz, 0.20 dB
at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters,
packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz.
77 Package Dimensions
12
5.28
(0.208)
.10
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8726E
AV02-1222EN - April 29, 2008
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