CED16N10L/CEU16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C Operating and Store Temperature Range ±20 Units V V ID 13.3 IDM 53 A 43 W PD - Derate above 25 C 100 A 0.34 W/ C TJ,Tstg -55 to 175 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 3.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 1. 2010.Jan. http://www.cetsemi.com Details are subject to change without notice . 1 CED16N10L/CEU16N10L Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 100 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 100, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA VGS(th) VGS = VDS, ID = 250µA Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance RDS(on) gFS 3 V VGS = 10V, ID = 6.5A 95 115 mΩ VGS = 5V, ID = 5A 100 5 125 mΩ S VDS = 10V, ID = 6.5A 1 Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 630 pF 105 pF 26 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 50V, ID = 13.3A, VGS = 10V, RGEN = 25Ω 11 22 ns 2.7 6 ns 73 150 ns Turn-Off Fall Time tf 7.5 15 ns Total Gate Charge Qg 17 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 80V, ID = 13.3A, VGS = 10V 2.2 nC 3.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 13.3A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d. L=0.5mH, IAS=13.3A, VDD=25V, RG=25Ω, Starting TJ=25 C 2 13.3 A 1.5 V CED16N10L/CEU16N10L 20 20 25 C 15 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V VGS=4.0V 10 5 15 10 5 TJ=125 C 0 0 1 2 3 4 0 5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 500 400 300 200 Coss 100 Crss 0 5 10 15 20 25 5.0 2.2 1.9 ID=6.5A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4.0 Figure 2. Transfer Characteristics Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 3.0 Figure 1. Output Characteristics 600 1.2 2.0 VGS, Gate-to-Source Voltage (V) 700 1.3 1.0 VDS, Drain-to-Source Voltage (V) 800 0 0.0 -55 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=80V ID=13.3A 6 4 2 0 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED16N10L/CEU16N10L 3 6 9 12 15 100ms 10 1ms 10ms DC 10 10 18 1 0 TC=25 C TJ=175 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 Single Pulse 10 -2 10 -2 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2