AP4002H/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
BVDSS
600V
RDS(ON)
5Ω
ID
2A
S
Description
G
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4002J) are
available for low-profile applications.
D
G
S
D
TO-251(J)
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Drain Current, VGS @ 10V
2
A
8
A
20
W
0.16
W/℃
20
mJ
2
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
4
Value
Unit
6.25
℃/W
62.5
℃/W
110
℃/W
1
201501295
AP4002H/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
600
-
-
V
VGS=10V, ID=1A
-
-
5
Ω
VGS=0V, ID=250uA
Max. Units
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
1.5
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+1
uA
Qg
Total Gate Charge
ID=2A
-
12
19
nC
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5.5
-
nC
td(on)
Turn-on Delay Time
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
52
-
ns
tf
Fall Time
RD=200Ω
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=10V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
Tj=25℃, IS=2A, VGS=0V
-
-
1.5
V
3
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.2
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
2
4.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4002H/J-HF
2
2
10V
7.0V
6.0V
1.5
10V
7.0V
6.0V
5.0V
o
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
1
5.0V
1.5
1
V G = 4.5 V
0.5
0.5
V G = 4.5 V
0
0
0
4
8
0
12
4
8
12
16
20
24
28
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =1A
V G =10V
Normalized RDS(ON)
Normalized BVDSS
1.1
1
2
1
0.9
0.8
0
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.2
10
8
Normalized VGS(th)
IS (A)
1
6
o
T j = 25 C
T j = 150 o C
4
0.8
0.6
2
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4002H/J-HF
f=1.0MHz
1000
I D =2A
V DS =480V
10
C iss
8
100
C oss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C rss
10
4
2
1
0
0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
100us
1
ID (A)
1ms
10ms
100ms
1s
DC
0.1
T c =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP4002H/J-HF
MARKING INFORMATION
TO-251
Part Number
4002J
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
Part Number
4002H
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5