UTC DTC123JG-AL6-T Npn digital transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTC123J
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)

FEATURES
* Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit).
* The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
* Only the on/off conditions need to be set for operation, making
device design easy.

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
DTC123JG-AE3-R
DTC123JG-AL3-R
DTC123JG-AN3-R
DTC123JG-AL6-T
DTC123JG-AL6-R
DTC123JL-T92-K
DTC123JG-T92-K
DTC123JL-T92-B
DTC123JG-T92-B
DTC123JL-T9S-K
DTC123JG-T9S-K
DTC123JL-T9S-B
DTC123JG-T9S-B
Note: Pin Assignment: G: GND
I: IN
O: OUT
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
SOT-23
SOT-323
SOT-523
SOT-363
SOT-363
TO-92
TO-92
TO-92SP
TO-92SP
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
G
I
O
G
I
O
G
O
I
G
O
I
G
O
I
G
O
I
Packing
Tape Reel
Tape Reel
Tape Reel
Tube
Tape Reel
Bulk
Tape Box
Bulk
Tape Box
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DTC123J

NPN SILICON TRANSISTOR
MARKING
SOT-23 / SOT-323 / SOT-523
SOT-363
6
5
4
CC3J
1
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
3
TO-92SP
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DTC123J

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Supply Voltage
Input Voltage
Output Current
Power Dissipation
SYMBOL
VCC
VIN
IO
IC(MAX.)
SOT-23/SOT-323
SOT-363
SOT-523
TO-92
TO-92SP
RATINGS
50
-5 ~ +12
100
100
UNIT
V
V
mA
200
mW
150
625
550
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PD
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VI (OFF)
Input Voltage
VI (ON)
Output Voltage
VO (ON)
Input Current
II
Output Current
IO(OFF)
DC Current Gain
hFE
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
Note: Transition frequency of the device
TEST CONDITIONS
VCC=5V, IO=100μA
VO=0.3V, IO=5mA
IO/II =5mA/0.25mA
VI =5V
VCC=50V, VI =0V
VO=5V, IO=10mA
VCE =10V, IE=−5mA, f=100MHz (Note)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
1.1
80
1.54
17
TYP MAX UNIT
0.5
V
0.1
0.3
3.6
0.5
V
mA
μA
2.2
21
250
2.86
26
KΩ
MHz
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Input Current, IIN (µA)
Output Current, IOUT (µA)
TYPICAL CHARACTERISTICS
100
90
R2
1000
80
70
60
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
GND(+) Voltage, VGND(+) (V)
DC Current Gain vs. Output Current
500
VIN=0V, OUT OPEN
DC Current Gain, hFE
GND(+) Current, IGND(+) (µA)

NPN SILICON TRANSISTOR
200
100
50
VOUT=5V
TA= 100°C
25°C
-40°C
20
10
5
2
1
0.1 0.2
0.5 1
2
5
10 20
50 100
Output Current, IOUT(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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