PRELIMINARY CGHV59070 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. Package Type : 440224, 4401 PN’s: CGHV5 70 9070F, CGHV5 9070P Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C) Parameter 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz 5.8 GHz 5.9 GHz Units 13.7 14.2 14.5 14.6 14.3 13.7 13.3 dB Output Power at 50 V 84 93 101 102 95 84 76 W Drain Efficiency at 50 V 55 56 57 56 54 50 48 % Power Gain at 50 V Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W) 20 Rev 1.0 - August 16 Features Applications • 4.4 - 5.9 GHz Operation • Marine Radar • 90 W POUT typical at 50 V • Weather Monitoring • 14 dB Power Gain • Air Traffic Control • 55 % Drain Efficiency • Maritime Vessel Traffic Control • Internally Matched • Port Security • Troposcatter Communications • Beyond Line of Sight - BLOS • Satellite Communications Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Symbol Rating Units Conditions VDSS 150 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 10.4 mA 25˚C Maximum Drain Current1 IDMAX 6.3 A 25˚C Soldering Temperature2 TS 245 ˚C τ 40 in-oz Thermal Resistance, Junction to Case3 RθJC 2.99 ˚C/W 85˚C, CW @ PDISS = 57 W Thermal Resistance, Junction to Case RθJC 0.85 ˚C/W 85˚C, 100 μsec, 10% Duty Cycle @ PDISS = 70 W TC -40, +150 ˚C Screw Torque 3 Case Operating Temperature2 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Simulated for the CGHV59070F at PDISS = 57.6 CW or PDISS = 70 W Pulsed 4 See also, the Power Dissipation De-rating Curve on Page 8. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) Saturated Drain Current2 IDS Drain-Source Breakdown Voltage VBR Conditions -3.8 -2.8 -2.3 VDC VDS = 10 V, ID = 10.4 mA 7.8 10.4 – A VDS = 6.0 V, VGS = 2.0 V 150 – – VDC VGS = -8 V, ID = 10.4 mA DC Characteristics1 RF Characteristics3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted) Output Power POUT1 – 100 – W VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz Output Power POUT1 – 95 – W VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz Output Power POUT1 – 76 – W VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz Drain Efficiency EFF1 – 57 – % VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz Drain Efficiency EFF2 – 54 – % VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz Drain Efficiency EFF3 – 48 – % VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz Power Gain PG1 – 14.5 – dB VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz Power Gain PG2 – 14.3 – dB VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz Power Gain PG3 – 13.3 – dB VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz VSWR – – 5:1 Y No damage at all phase angles, VDD = 50 V, IDQ = 0.15A, PIN = 35.5 dBm Pulsed Input Capacitance CGS – 36 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 109 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.26 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV59070F-AMP 4 Drain Efficiency = POUT / PDC Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV59070 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Small Signal Gain, Input Return Loss, Output Return Loss (dB) Figure 1 - Small Signal Gain and Return Losses of CGHV59070 the CGHV59070-AMP vs Frequency S-parameter VDD = V50 V, I = 150 mA =50V,I =150mA D D DQ 20 15 10 5 0 -5 -10 -15 S11 S21 -20 S22 -25 -30 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 Frequency (MHz) 6000 6200 6400 6600 6800 7000 Figure 2 - Power Gain, Drain Efficiency, and Output Power vs Frequency measured in Amplifier CircuitCGHV59070 CGHV59070P-AMP Pout (W), Drain EFF & GAIN @ PIN 35.5 dBm VD=50V,I VDD = 50 V, IDQ = 150 mA, PIN = 35.5 dBm, Pulse Width = 100 μsec, Duty Cycle = 10% D=150mA Pulsed 100uS,10% Output Power (W), Power Gain (dB), Efficiency (%) 110 100 90 80 70 60 50 40 P GAIN (dB) EFF (%) 30 Pout (W) 20 10 0 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 Frequency (GHz) 5.6 5.7 5.8 Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV59070 Rev 1.0 5.9 6.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3 - Maximum Available Gain and K Factor of the CGHV59070 Gmax & K-factor VDD = V, IIDQ = 150 mA =50V, VD50 D=150 mA 50 10 45 9 G max 8 K 35 7 30 6 25 5 20 4 15 3 10 2 5 1 0 0 1000 2000 3000 4000 5000 Frequency (MHz) 6000 K Gmax (dB) 40 0 8000 7000 Figure 4 - Power Gain, Drain Efficiency and CGHV59070 Output Power vs Input Power of the CGHV59070 Gain & Drain Efficiency and POUT vs Input Power VDD = 50 V, IDQ = 150 mA, Pulse Width = 100 μsec, Duty Cycle = 10% VD=50V,ID=150mA, Pulsed 100uS, 10% 120 60 Output Power (W), Gain (dB) 100 5.55GHz, Pout 5.55GHz, Gain 5.55GHz, Eff 5.90GHz, Pout 5.90GHz, Gain 5.90GHz, Eff 50 80 40 60 30 40 20 20 10 0 16 18 20 22 24 26 28 Input Power (dBm) 30 32 Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV59070 Rev 1.0 34 36 Drain Efficiency (%) 5.20GHz, Pout 5.20GHz, Gain 5.20GHz, Eff 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Simulated Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 4400 2.6 - j12.9 14.0 - j6.9 4600 3.8 - j14.2 15.0 - j6.7 4800 5.8 - j15.3 16.0 - j7.0 5000 8.8 - j15.4 16.7 - j8.0 5200 8.8 - j14.7 17.1 - j9.1 5300 8.5 - j14.5 16.9 - j10.0 5400 8.1 - j14.2 16.5 - j10.7 5500 7.8 - j13.9 15.4 - j11.4 5600 7.5 - j13.6 15.4 - j12.0 5700 7.2 - j13.3 14.6 - j12.5 5800 6.9 - j13.3 13.8 - j12.8 5900 6.6 - j12.7 12.9 - j13.1 Note 1. VDD = 50 V, IDQ = 150 mA in the 440224 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGHV59070 Power Dissipation De-rating Curve, CW and Pulse (100 μsec, 10%) Power dissipation derating curve vs. Max TCase CW & Pulse (100 uS/ 10% duty) 80 70 Pulsed CW Power Dissipation (W) 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 Flange Temperature (°C) Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV59070 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV59070-AMP Demonstration Amplifier Circuit Schematic CGHV59070-AMP Demonstration Amplifier Circuit Outline Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV59070 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV59070-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 15,OHM, +/- 1%, 1/16W, 0402 R2 RES,1/16W,0603,1%,10.0 OHMS 1 1 C1 CAP, 4.7 pF,+/-0.1pF, 0603, ATC600S 1 C10 CAP, 1.3 pF,+/-0.1pF, 0603, ATC600S 1 C3,C11 CAP, 2.0 pF,+/-0.1pF, 0603, ATC600S 1 CAP, 2.0 pF, +/- 0.05 pF, 0402, ATC 1 C2 C4,C12 CAP, 10pF,+/-5%, 0603, ATC 2 C5,C13 CAP, 470PF, 5%, 100V, 0603, X 2 C6,C14 CAP, 33000PF, 0805,100V, X7R 2 C15 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C7 CAP 10UF 16V TANTALUM 1 W1 CABLE ,18 AWG, 4.2 inch 1 C16 CAP, 470uF, 20%, 80V, ELECT, SMD Size K 1 J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 CGHV59070-AMP Demonstration Amplifier Circuit Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV59070 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV59070F (Package Type — 440224) Product Dimensions CGHV59070P (Package Type — 440170) Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV59070 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV59070F GaN HEMT Each CGHV59070P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV59070F-TB CGHV59070F-AMP Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV59070 Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV59070 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf