SY DB105S Bilateral voltage triggered switch breakover voltage:95-330volt Datasheet

SIDAC
Bilateral Voltage triggered Switch Breakover Voltage:95-330Volts
Mini-MELF(DO-213AA)
General Description
JJC' s SIDAC (Silicon Diode for Alternating Current)
represents an unique set of thyristor qualities. The SIDAC
is a bidirectional voltage triggered switch. Upon application
of a voltage exceeding the sidac breakover voltage point,
the sidac switches on through a negative resistance region
to a low on-state voltage. conduction will continue until the
current is interrupted or drops below the minimum holding
current of the device.
At present, JINGHENG can offer three kinds of package in
DO-41,R-1,Mini-MELF,SMA,SOD-123FL
JINGHENG's sidacs feature glass passivated junctions to ensure
a rugged and dependable device capable of withstanding
harsh environments.
Inches (millimeters)
SOLDERABLE ENDS
1st BAND
0.067(1.7)
0.059(1.5)
0.018(0.45)
0.010(0.25)
0.144(3.65)
0.136(3.45)
SOD-123FL
SMA(DO-214AC)
Features
0.110(2.79)
0.100(2.54)
Bilateral Voltage triggered
0.039(1.00 )
0.020(0.50)
0.077(1.95 )
0.054(1.38)
AC circuit oriented
Glass-passivated junctions
0.065(1.65)
0.049(1.25)
High surge current capabilities
Applications
0.090(2.29)
High voltage lamp ignitors
0.078(1.98)
Xenon ignitors
0.060(1.52)
Natural gas ignitors
0.030(0.76)
Over voltage protector
Gas oil ignitors
High voltage power supply
Pulse generators
Fluorescent lighting ignitors
HID (high intensity discharge) lighting ignitors
0.114(2.90 )
0.098(2.50)
0.181(4.60)
0.157(3.99)
0.154(3.90)
0.138(3.50)
0.012(0.305)
0.006(0.152)
5°
0.010(0.25)
MAX
0.052(1.33)
0.031(0.8)
0.008(0.203)
MAX
0.208(5.28)
0.189(4.80)
0.010(0.25)
MIN
DO-41
R-1
1.0(25.4)
MIN.
0.102(2.6)
0.091(2.3)
DIA.
0.025(0.65)
0.021(0.55)
DIA.
1.0(25.4)
MIN
0.107(2.7)
0.080(2.0)
DIA.
0.205(5.20)
0.161(4.10)
0.140(3.5)
0.116(2.9)
1.0(25.4)
MIN.
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1.0(25.4)
MIN
0.034(0.85)
0.026(0.65)
DIA.
Electrical Specifications
PART NUMBER
IT(RMS)
VDRM
On-state
RMS Current
Tj≦110 C
Repetitive
Peak
Off-state
Voltage
50/60Hz
DO-41
R-1
SMA
DB105A DB105R DB105S
SOD
-123FL
DB105K
Mini
-MELF
IDRM
VBO
Breakover voltage
50/60Hz sine wave
IBO
Repetitive Peak
Off-state Current
50/60hz Sine Wave
V=VDRM
Breakover
Current
50/60Hz
sine wave
Amps
Amps
Amps
Volts
MAX
MIN
MIN
MAX
LL105
1.0
±90
95
113
5
10
±90
104
118
5
10
Volts
MAX
MAX
DB110S
DB110K
LL110
1.0
DB120A DB120R DB120S
DB120K
LL120
1.0
±90
110
125
5
10
DB130A DB130R DB130S
DB130K
LL130
1.0
±90
120
138
5
10
DB140A DB140R DB140S
DB140K
LL140
1.0
±90
130
146
5
10
DB150A DB150R DB150S
DB150K
LL150
1.0
±90
140
170
5
10
DB200A DB200R DB200S
DB200K
LL200
1.0
±180
190
215
5
10
LL220
1.0
±180
205
230
5
10
220
250
5
10
DB110A DB110R
DB220A DB220R DB220S
DB220K
DB240K
LL240
1.0
±190
DB250S
DB250K
LL250
1.0
±190
240
280
5
10
DB300A DB300R DB300S
DB300K
LL300
1.0
±190
270
330
5
10
DB240A DB240R
DB250A DB250R
IH
DB240S
VTM
Dynamic
Holding Current
50/60hz
Sine Wave
R=100 OHMS
Peak On-state Voltage
IT=1Amp
Volts
MAX
mAmps
RS
ITSM
Peak One Cycle
Surge Current
50/60Hz Sine Wave
(Non-Repetitive)
Amps
60Hz
50Hz
Switching
Resistance
(VBO-VS)
Rs =
(IS-IBO)
50/60Hz
Sine Wave
KΩ
MIN
0.1
0.1
0.1
0.1
dv/dt
Critical
Rate-of-rise
Of Off-state
Voltage at
Rate VDRM
Tj ≦100 C
Volts/ second
MIN
TYP
40
40
40
40
MAX
100
100
100
100
2.0
2 .0
2 .0
2.0
20
20
20
20
16.7
16.7
16.7
16.7
40
40
40
40
40
100
100
100
100
100
2 .0
2 .0
2 .0
20
20
20
20
20
16.7
16.7
16.7
16.7
16.7
0.1
1500
1500
0.1
0.1
0.1
0.1
1500
1500
1500
1500
40
40
100
100
20
20
16.7
16.7
0.1
0.1
1500
1500
2 .0
2 .0
2.0
2.0
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1500
1500
1500
di/dt
Critical
Rate-of-Rise
Of On-State
Current
Amps/ second
TYP
150
150
150
150
150
150
150
150
150
150
150
Electrical Specifications
V-I Characteristics
FIG.1 Normalized DC Holding Current vs case/Lead
Temperature
+I
IT
IH
IH (Tc=25 C)
RS
IH
Ratio of
IS
IBO
IDRM
-V
+V
VT VDRM
VSVBO
Case Temperature(TC)
RS=
C
(VBO-VS)
(IS-IBO)
FIG.3 Normalized Repetitive Peak Breakover
Current vs Junction Temperature
-I
Peak surge (Non-repetitive)
on-state current (ITSM)-Amps
100
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum
Rated value at Special junction
temperature
40
30
20
10
8.0
6.0
4.0
1.0
1.0
10
100
1000
FIG.4 Repetitive Peak On-State Current (ITRM) vs
Pulse Width at Various Frequencies
Non
Repetitive Peak On-State
Current (ITRM)-Amps
200
100
80
60
40
f=1
f=1
20
2X10-3
2
00H
pea
VBO Firing
Current
wavetorm
ted
pe
vt
titio
nF
z
req
ue
z
nc
yf
=5
Hz
kHz
kHz
Hz
6
50
60
70
80
90
100
110
120
0
-2
-4
-6
-8
-10
Hz
TJ=110 C Max
4
40
+2
to
f=5
f=20k
30
FIG.5 Normalized CBO Changes vs Case
Temperature
ITRM
f=1
f=10k
20
+4
-Re
Re
0H
V=VBO
3
Percentage of VBO Changes-%
400
1
0.8
0.6
4
di/dt Limit Line
600
2
5
Junction Temperature (TJ)- C
Surge Current Duration- Full Cycles
10
8
6
4
9
8
7
6
1
BLOCKING CAPABILITY MAY BE LOST DURING
AND IMMEDIATELY FOLLOWING SURGE
CURRENT IMTERVAL
OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED TO STEADY-STATE RATED
VALUE
2.0
Repetitive Peak Breakover Current
(IBO) Multiplier
FIG.2 Peak surge current vs surge current duration
8
1X10-2
2
4
6
8
1X10-1
2
4
6
8
1
-12
-40
-20
0
+20 +25 +40
+60
Junction Temperature(TJ) C
Pulse base width (to)-mSec.
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+80
+100
+120
Electrical Specifications
FIG.7 Typical High Pressure Sodium Lamp Firing
Circuit
FIG.6 Ignitor Circuit (Low Voltage Input)
4.7mF
BALLAST
BALLAST
4.7KW
10mF
0.47mF
400V
SIDAC
- +
50V
0.22mF
SIDAC
SIDAC
+
-
4.7mF
100V
1.2mF
LAMP
3.3KW
7.5KW
LAMP
200V
24VAC
60Hz
120VAC
60Hz
220VAC
50Hz
16mH
H.V.
IGNITOR
120VAC
FIG.8 Comparison of SIDAC vs SCR
220VAC
FIG.9 Xenon Lamp Flashing Circuit
100
-
XENON LAMP
10 F
- +
250V
100-250
VAC
60Hz
100-250
VAC
60Hz
S1
100
1%
0.1 F
400V
VBO
VBO
IH
TRACE STOPES
IH
+
SIDAC
VBO
Ipk
DEVICE
UNDER
TEST
4KV
FIG.11 Basic SIDAC Circuit
SWITCH TO TEST IN EACH
DIRECTIONS
100-250
VAC
60Hz
20M
10 F
250V
-
FIG.10 Dynamic Holding Current Test Circuit for SIDAC
PUSH TO TEST
120VAC
60Hz
SIDAC
100-250
VAC
60Hz
SCOPE
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LOAD
VVBO
BO
IH
IH
125-145
CONDUCTION
ANGLE
LOAD CURRENT
Electrical Specifications
FIG.12 Relaxation Oscillator Using a SIDAC
(a) Circuit
(b) Waveforms
VBO
VC
R
SIDAC
t
VC
VDC(IN) VBO
IL
C
IL
RL
t
Rmax
VIN-VBO
IBO
VIN-VTM
IH(MIN)
Rmin
FIG.13 SIDAC Added To Protect Transistor For Typical Transistor Inductive Load Switching Requirements
INPUT
VOLTAGE
0V
VCE MONITOR
TW=3ms
(See Note A)
TW
(See Note B)
INPUT
2N6127
(or equivalent)
5V
100mH
COLLECTOR
CURRENT
RBB1=150W
TIP-47
50W
VCC=20V
RBB2=100W
50W
100mS
0.63A
+
0
SIDAC VBO
+
VBB1=10V
RS=0.1W
VBB2=0
IC MONITOR
-
COLLECTOR
VOLTAGE
10V
VCE(sat)
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until ICM=0.63A.
NOTE B: Sidac (or Diac or series of diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown
of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.
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