A Product Line of Diodes Incorporated DMN4015LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 15mΩ @ VGS= 10V 20.8A 20mΩ @ VGS= 4.5V 18.0A • Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) 40V Mechanical Data • Case: TO252-3L Description and Applications • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Backlighting • Marking Information: See Below • DC-DC Converters • • Ordering Information: See Below Power management functions • Weight: 0.33 grams (approximate) D D G D G TOP VIEW Ordering Information Product DMN4015LK3-13 Note: S S PIN OUT -TOP VIEW Equivalent Circuit (Note 1) Marking N4015L Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YYWW N4015L DMN4015LK3 Document Revision: 1 = Manufacturer’s Marking N4015L = Product Type Marking Code YYWW = Date Code Marking YY = Last two digits of year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA=70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 40 ±20 20.8 16.6 13.5 72.8 13.2 72.8 Unit V V Value 4.36 34.8 10.3 82.4 2.19 17.5 28.6 12.1 57.0 0.85 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) (Note 3) (Note 5) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN4015LK3 Document Revision: 1 2 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Thermal Characteristics 100 100 RDS(on) Limited ID Drain Current (A) ID Drain Current (A) RDS(on) 10 DC 1 1s 100ms 100m 10ms Limited 10 DC 1 1s 100ms 10ms 100m T amb=25°C 1ms 25mm x 25mm 1oz FR4 10m 100m 100µs 1 T amb=25°C 10m 0.1 10 100µs 1 VDS Drain-Source Voltage (V) 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area 30 T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) 60 Thermal Resistance (°C/W) 1ms 50mm x 50mm 2oz FR4 Transient Thermal Impedance T amb=25°C 25 50mm x 50mm 2oz FR4 20 D=0.5 15 10 D=0.1 D=0.2 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) 4.5 Single Pulse T amb=25°C 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DMN4015LK3 Document Revision: 1 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 40 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 40V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage 15 VGS= 10V, ID= 14A RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 7 & 8) gfs ⎯ 35.3 ⎯ S VDS= 15V, ID= 12A Diode Forward Voltage (Note 7) VSD ⎯ 0.87 1.0 V IS= 14A, VGS= 0V Reverse recovery time (Note 8) trr 141 ⎯ ns Reverse recovery charge (Note 8) Qrr ⎯ 872 ⎯ nC Input Capacitance Ciss ⎯ 2072 ⎯ pF Output Capacitance Coss ⎯ 338 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 193 ⎯ pF Total Gate Charge Qg ⎯ 21 ⎯ nC Total Gate Charge Qg ⎯ 42 ⎯ nC Gate-Source Charge Qgs ⎯ 7.3 ⎯ nC Gate-Drain Charge Qgd ⎯ 10.7 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 7.8 ⎯ ns Turn-On Rise Time (Note 9) tr ⎯ 18.5 ⎯ ns tD(off) ⎯ 37.3 ⎯ ns tf ⎯ 14.9 ⎯ ns Static Drain-Source On-Resistance (Note 7) 20 mΩ VGS= 4.5V, ID= 11A IS= 14A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Notes: VDS= 20V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 20V ID= 14A VDD= 20V, VGS= 10V ID= 14A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMN4015LK3 Document Revision: 1 4 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Typical Characteristics T = 25°C 4V 3V 1 0.1 T = 150°C 10V 3.5V 2.5V VGS 3.5V 10 ID Drain Current (A) ID Drain Current (A) 10V 10 3V 2.5V 1 2V 0.1 0.01 VGS 1.5V 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1 T = 150°C 0.1 T = 25°C 0.01 1E-3 1 2 3 4 VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics DMN4015LK3 Document Revision: 1 10 VGS 2.5V 3V 3.5V 1 T = 25°C 0.1 4V 0.01 0.01 10V 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current VGS = 10V 1.4 ID = 14A RDS(on) 1.2 1.0 0.8 0.4 -50 VGS(th) VGS = VDS 0.6 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) ID Drain Current (A) VDS = 10V Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Typical Characteristics - continued 3000 C Capacitance (pF) 2500 f = 1MHz 2000 CISS COSS 1500 CRSS 1000 500 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 VGS = 0V 8 6 4 VDS = 20V 2 0 ID = 14A 0 Capacitance v Drain-Source Voltage 5 10 15 20 25 30 35 40 45 Q - Charge (nC) VDS - Drain - Source Voltage (V) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN4015LK3 Document Revision: 1 Switching time test circuit 6 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Package Outline Dimensions DIM Inches Millimeters Min Max Min DIM Max Inches Min Millimeters Max Min A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - DMN4015LK3 Document Revision: 1 7 of 8 www.diodes.com 0.090 BSC Max 2.29 BSC July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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