TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02 Series Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode ESD206-B1-02ELS ESD206-B1-02EL Data Sheet Revision 1.5, 2013-12-19 Final Power Management & Multimarket ESD206-B1-02 Series Revision History, Rev 1.4, 2013-11-26 Page or Item Subjects (major changes since previous revision) Revision 1.5, 2013-12-19 5 Update of Table 2-2) Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 2 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode 1 Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode 1.1 Features • • • • • • • ESD/Transient/Surge protection of one data / Vbus line exceeding standard: – IEC61000-4-2 (ESD): ±30 kV (air/contact discharge) – IEC61000-4-4 (EFT): ±50 A (5/50 ns) – IEC61000-4-5 (surge): ±6 A (8/20 μs) Medium capacitance: CL = 12 pF (typ.) Bi-directional symmetrical working voltage: -5.5 V to +5.5 V Low leakage current Very low ESD clamping voltage: 8 V (typ.) Very low dynamic resistance: 0.13 Ω (typ.) Pb-free (RoHS compliant) and halogen free package 1.2 • • Application Examples Audio Line, Speaker, Headset, Microphone Protection Human Interface Devices (Keyboard, Touchpad, Buttons) 1.3 Product Description Pin 1 Pin 2 Pin 1 marking (lasered) Pin 1 TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Ordering Information Type Package Configuration Marking code ESD206-B1-02ELS TSSLP-2-3 1 line, bi-directional r ESD206-B1-02EL TSLP-2-19 1 line, bi-directional A3 Final Data Sheet 3 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Characteristics 2 Characteristics 2.1 Maximum Ratings Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Unit Min. Typ. Max. VESD - - 30 kV IPP - - 6 A Operating temperature range TOP -55 - 125 °C Storage temperature Tstg -65 - 150 °C 2) ESD air / contact discharge Peak pulse current (tp = 8/20 μs) 3) 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 3) IPP according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Electrical Characteristics at TA = 25 °C, unless otherwise specified !"# Figure 2-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Characteristics Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM - - 5.5 V Reverse current IR - - 50 nA Trigger voltage Vt1 6.1 - - V Holding voltage Vh 6.1 8 9.5 V IR = 10 mA Unit Note / Test Condition pF VR = 0 V, f = 1 MHz VR = 5.5 V 1) Device is electrically symmetrical Table 2-3 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance Table 2-4 CL Values Min. Typ. Max. - 12 20 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Clamping voltage Pin 1 to GND VCL Values Min. Typ. Max. - 8 - - 10.8 - 1) Clamping voltage GND to Pin1 2) Clamping voltage Dynamic resistance 1) RDYN Unit Note / Test Condition V ITLP = 16 A ITLP = 30 A 8.5 ITLP = 16 A 12.5 ITLP = 30 A - 7.5 - IPP = 1 A, tp = 8/20 µs - 9.6 - IPP = 6 A, tp = 8/20 µs - 0.13 - 0.16 Ω Pin 1 to GND GND to Pin 1 1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω, tp = 100 ns, tr , = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristic between ITLP1 = 10 A and ITLP2 = 40 A. Please refer to Application Note AN210[1]. 2) IPP according to IEC61000-4-5 (tp = 8/20 μs) Final Data Sheet 5 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Typical Characteristics at TA = 25 °C, unless otherwise specified 3 Typical Characteristics at TA = 25 °C, unless otherwise specified -8 10 -9 IR [A] 10 -10 10 -11 10 -6 -5 -4 -3 -2 -1 0 1 VR [V] 2 3 4 5 6 Figure 3-1 Reverse current: IR = f(VR) 14 13 12 CL [pF] 11 10 9 8 7 6 -6 -5 -4 -3 -2 -1 0 VR [V] 1 2 3 4 5 6 Figure 3-2 Line capacitance: CL = f(VR), f = 1MHz Final Data Sheet 6 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Typical Characteristics at TA = 25 °C, unless otherwise specified 60 30 ESD206-B1-02ELS RDYN 50 25 40 20 30 15 20 10 10 5 0 0 -10 -5 -20 -10 Equivalent VIEC [kV] ITLP [A] RDYN = 0.13 Ω RDYN = 0.16 Ω -30 -15 -40 -20 -50 -25 -60 -20 -15 -10 -5 0 5 10 15 -30 20 VTLP [V] Figure 3-3 Clamping voltage (TLP): ITLP = f(VTLP) according ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω, tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = ns to t2 = 60 ns, extraction of dynamic resistance using squares fit to TLP characteristics between ITLP1 = 10 A and ITLP2 = 40 A. Please refer to Application Note AN210 [1] Final Data Sheet 7 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Typical Characteristics at TA = 25 °C, unless otherwise specified 7 ESD206-B1-02ELS RDYN 6 5 4 3 RDYN = 0.4 Ω 2 IPP [A] 1 0 -1 -2 RDYN = 0.5 Ω -3 -4 -5 -6 -7 -20 -15 -10 -5 0 VCL [V] 5 10 15 20 Figure 3-4 Pulse current (IEC61000-4-5) versus clamping voltage: IPP = f(VCL) Final Data Sheet 8 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Typical Characteristics at TA = 25 °C, unless otherwise specified 60 Scope: 6 GHz, 20 GS/s 50 40 VCL [V] 30 VCL-max-peak = 44 V 20 VCL-30ns-peak = 8 V 10 0 -10 -20 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 3-5 IEC61000-4-2 : VCL = f(t), 8 kV positive pulse from pin 1 to pin 2 20 Scope: 6 GHz, 20 GS/s 10 0 VCL [V] -10 -20 -30 -40 VCL-max-peak = -51 V -50 VCL-30ns-peak = -8 V -60 -70 -80 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 3-6 IEC61000-4-2 : VCL = f(t), 8 kV negative pulse from pin 1 to pin 2 Final Data Sheet 9 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Typical Characteristics at TA = 25 °C, unless otherwise specified 100 Scope: 6 GHz, 20 GS/s 80 VCL [V] 60 VCL-max-peak = 82 V 40 VCL-30ns-peak = 9 V 20 0 -20 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 3-7 IEC61000-4-2 : VCL = f(t), 15 kV positive pulse from pin 1 to pin 2 20 Scope: 6 GHz, 20 GS/s 0 VCL [V] -20 -40 VCL-max-peak = -100 V -60 VCL-30ns-peak = -10 V -80 -100 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 3-8 IEC61000-4-2 : VCL = f(t), 15 kV negative pulse from pin 1 to pin 2 Final Data Sheet 10 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Package Information 4 Package Information 4.1 TSSLP-2-3 Top view Bottom view 0.31 +0.01 -0.02 0.32 ±0.05 0.355 0.62 ±0.05 2 Cathode marking 0.26 ±0.035 0.2 ±0.035 1) 1 0.05 MAX. 1) 1) Dimension applies to plated terminals TSSLP-2-3, -4-PO V01 Figure 4-1 TSSLP-2-3: Package outline (dimension in mm) 0.24 Copper Solder mask 0.19 0.19 0.62 0.57 0.14 0.19 0.27 0.24 0.32 Stencil apertures TSSLP-2-3, -4-FP V02 Figure 4-2 TSSLP-2-3: Footprint (dimension in mm) 0.35 4 8 Ey Tape type Ex Ey Punched Tape 0.43 0.73 Embossed Tape 0.37 0.67 Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Cathode marking Ex TSSLP-2-3, -4-TP V03 Figure 4-3 TSSLP-2-3: Tape and reel (dimension in mm) Figure 4-4 TSSLP-2-3: Marking example Final Data Sheet 11 Revision 1.5, 2013-12-19 ESD206-B1-02 Series Package Information 4.2 TSLP-2-19 Top view Bottom view 0.31 +0.01 -0.02 0.6 ±0.05 0.05 MAX. 1±0.05 0.65 ±0.05 2 0.25 ±0.035 1) 1 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminals Figure 4-5 TSLP-2-19: Package outline (dimension in mm) 0.28 0.35 Solder mask 0.38 0.93 0.3 1 Copper 0.28 0.45 0.35 0.6 Stencil apertures TSLP-2-19, -20-FP V01 Figure 4-6 TSLP-2-19: Footprint (dimension in mm) 0.4 1.16 Cathode marking 8 4 0.76 TSLP-2-19, -20-TP V02 Figure 4-7 TSLP-2-19: Tape and reel (dimension in mm) Type code 12 Cathode marking TSLP-2-19, -20-MK V01 Figure 4-8 TSLP-2-19: Marking example Final Data Sheet 12 Revision 1.5, 2013-12-19 ESD206-B1-02 Series References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology Final Data Sheet 13 Revision 1.5, 2013-12-19 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG