IRF AUIRS2334S Floating channel designed for bootstrap operation Datasheet

11 August 2011
AUIRS2334S
3 PHASE GATE DRIVER HVIC
Product Summary
Features
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Floating channel designed for bootstrap operation
Fully operational to 600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Integrated dead time protection
Shoot-through (cross-conduction) prevention logic
Under-Voltage lockout for both channels
Independent 3 half-bridge drivers
3.3 V input logic compatible
Advanced input filter
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs
RoHS compliant, lead free
Automotive qualified
Topology
3 phase
VOFFSET
≤ 600 V
10 V – 20 V
VOUT
Io+ & I o- (typical)
200 mA & 350 mA
tON & tOFF (typical)
530 ns
Package Options
Typical Applications
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Motor Control
Low Power Fans
General Purpose Inverters
Micro/Mini Inverter Drivers
20 leads wide body SOIC
Typical Connection Diagram
Up to 600V
Vcc
Vcc
HIN1,2,3
HIN1,2,3
LIN1,2,3
LIN1,2,3
VB1,2,3
HO1,2,3
VS 1,2,3
TO
LOAD
LO1,2,3
COM
IRS2334
GND
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1
© 2010 International Rectifier
AUIRS2334S
Table of Contents
Page
Description
3
Simplified Block Diagram
3
Typical Application Diagram
4
Qualification Information
5
Absolute Maximum Ratings
6
Recommended Operating Conditions
6
Static Electrical Characteristics
7
Dynamic Electrical Characteristics
7
Functional Block Diagram
8
Input/Output Pin Equivalent Circuit Diagram
9
Lead Definitions
10
Lead Assignments
10
Application Information and Additional Details
11 - 22
Parameter Temperature Trends
22 - 25
Package Details
26
Tape and Reel Details
27
Part Marking Information
28
Ordering Information
28
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AUIRS2334S
Description
The AUIRS2334S is a high voltage, high speed power MOSFET and IGBT driver with three independent high
side and low side referenced output channels for 3-phase applications. Proprietary HVIC and latch immune
CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or
LSTTL outputs, down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency
applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side
configuration up to 600 V.
Simplified Block Diagram
VCC
HV floating well
Schmitt trigger, minimum dead time
and shoot-through protection
bootstrap diode
VB high side power
supply
high side output
high side input
HV Level
Shifters
VS high side supply
return
low side input
to high side
power switches
(x3)
low side output
Delay
COM
to low side
power switches
(x3)
GND
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AUIRS2334S
Typical Application Diagram
Rail Voltage ≤ 600 V
To
Load
Input
Voltage
IRS2334
AUIRS2334
VCC
Control
Inputs
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AUIRS2334S
Qualification Information†
Automotive
(per AEC-Q100††)
Comments: This family of ICs has passed an Automotive
qualification. IR‘s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Qualification Level
SOIC20W
Moisture Sensitivity Level
Class M2(+/-150V)
(per AEC-Q100-003)
Class H1B(+/-750V)
(per AEC-Q100-002)
Class C4(+/-1000V)
(per AEC-Q100-011)
Class II, Level A
(per AEC-Q100-004)
Yes
Machine Model
ESD
MSL3††† 260°C
(per IPC/JEDEC J-STD-020)
Human Body Model
Charged Device Model
IC Latch-Up Test
RoHS Compliant
†
Qualification standards can be found at International Rectifier‘s web site http://www.irf.com/
†† Exceptions (if any) to AEC-Q100 requirements are noted in the qualification report.
††† Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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AUIRS2334S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM unless otherwise specified. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB
VS
VHO1,2,3
VCC
VLO1,2,3
VIN
PWHIN
dVS/dt
PD
RthJA
TJ
TS
TL
†
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic and analog input voltages
High-side input pulse width
Allowable offset supply voltage slew rate
Package power dissipation @ TA ≤ 25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
20 lead SOIC
20 lead SOIC
Min.
Max.
-0.3
†
VB1,2,3 - 25
VS1,2,3 - 0.3
-0.3
-0.3
-0.3
500
—
—
—
—
-55
—
625
VB1,2,3 + 0.3
VB1,2,3 + 0.3
†
25
VCC + 0.3
VCC + 0.3
—
50
1.14
65.8
150
150
300
Units
V
ns
V/ns
W
°C/W
°C
All supplies are fully tested at 25 V. An internal 25 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are
absolute voltages referenced to COM unless otherwise specified. The VS1,2,3 offset ratings are tested with all
supplies biased at 15 V.
Symbol
VB1,2,3
VS1,2,3
VS1,2,3(t)
VHO1,2,3
VCC
VLO1,2,3
VIN
TA
†
††
Definition
Min.
High side floating supply voltage
†
Static high side floating supply offset voltage
Transient high side floating supply offset voltage††
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
Ambient temperature
VS1,2,3 +10
-8
-50
VS1,2,3
10
0
0
-40
Max.
VS1,2,3 + 20
600
600
VB1,2,3
20
VCC
VCC
125
Units
V
°C
Logic operation for VS of –8 V to 600 V. Logic state held for VS of –8 V to –VBS.
Operational for transient negative VS of -50 V with a 50 ns pulse width. Guaranteed by design. Refer to the
Application Information section of this datasheet for more details.
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AUIRS2334S
Static Electrical Characteristics
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤
125°C with bias conditions of (VCC-COM) = (VB1,2,3-VS1,2,3) = 15 V. The VIN and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to COM and VS1,2,3 and are applicable to the output leads
LO1,2,3 and HO1,2,3 respectively. The VCCUV and VBSUV parameters are referenced to COM and VS respectively.
Symbol
VIH
VIL
VIN,TH+
VIN,THVOH
VOL
VCCUV+
VBSUV+
VCCUVVBSUVVCCUVH
VBSUVH
ILK
IQBS
IQCC
IIN+
IINIo+
Io-
Definition
Min.
Typ.
Max.
Units
2.5
—
—
—
—
—
—
—
1.9
1
0.9
0.4
—
0.8
—
—
1.4
0.6
V
10.4
11.1
11.6
10.2
10.9
11.4
VCC and VBS supply under-voltage hysteresis
0.05
0.2
—
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Logic ―1‖ input bias current
Logic ―0‖ input bias current
Output high short circuit pulsed current
Output low short circuit pulsed current
—
—
—
—
—
120
200
1
40
300
150
50
120
700
250
1
—
—
Logic ―1‖ input voltage
Logic ―0‖ input voltage
Input positive going threshold
Input negative going threshold
High level output voltage
Low level output voltage
VCC and VBS supply under-voltage positive
going threshold
VCC and VBS supply under-voltage negative
going threshold
200
350
µA
µA
Test Conditions
IO = 20 mA
VB =VS = 600 V
VIN = 0 V
µA
VIN = 5 V
VIN = 0 V
mA
VO = 0 V or 15 V
PW ≤ 10 µs
Dynamic Electrical Characteristics
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤
125°C with bias conditions of VCC = VB1,2,3 = 15 V, VS1,2,3 = COM, and CL = 1000 pF unless otherwise specified.
Symbol
ton
toff
tr
tf
tFILIN
DT
MDT
MT
PM
†
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Input filter time
Dead time
Dead time matching
ton, toff propagation delay matching time
†
PW pulse width distortion
Min.
Typ.
Max.
400
400
—
—
200
180
—
—
—
530
530
125
50
350
290
—
—
—
750
750
190
75
510
420
70
60
75
Units
Test Conditions
VIN = 0V and 5V
ns
VIN = 0V & 5V
External dead time
0s
PW input =10µs
PM is defined as PWIN - PWOUT.
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AUIRS2334S
Functional Block Diagram
HIN1
Input
Noise
Filter
LIN1
Input
Noise
Filter
HIN2
Input
Noise
Filter
LIN2
Input
Noise
Filter
HIN3
Input
Noise
Filter
LIN3
Input
Noise
Filter
AUIRS2334
SD
VB1
HV
Level
Shifter
Deadtime &
Shoot-Through
Prevention
SET
Latch
RESET
UV
Detect
Driver
HO1
VS1
VB2
SD
HV
Level
Shifter
Deadtime &
Shoot-Through
Prevention
SET
Latch
RESET
UV
Detect
SET
Latch
RESET
UV
Detect
Driver
HO2
VS2
VB3
SD
Deadtime &
Shoot-Through
Prevention
HV
Level
Shifter
Driver
HO3
VS3
VCC
UV
Detect
Delay
Driver
LO1
Delay
Driver
LO2
Delay
Driver
LO3
COM
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AUIRS2334S
Input/Output Pin Equivalent Circuit Diagrams
VB1,2,3
ESD
Diode
25 V
Clamp
HO1,2,3
ESD
Diode
VCC
ESD
Diode
VS1,2,3
600 V
LIN, HIN
ESD
Diode
R
VCC
pulldown
ESD
Diode
COM
25 V
Clamp
LO1,2,3
ESD
Diode
COM
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AUIRS2334S
Lead Definitions
Symbol
VCC
VB1
VB2
VB3
VS1
VS2
VS3
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
HO1
HO2
HO3
LO1
LO2
LO3
COM
Description
Low side and logic power supply
High side floating power supply (phase 1)
High side floating power supply (phase 2)
High side floating power supply (phase 3)
High side floating supply return (phase 1)
High side floating supply return (phase 2)
High side floating supply return (phase 3)
Logic input for high side gate driver output HO1, input is in-phase with output
Logic input for high side gate driver output HO2, input is in-phase with output
Logic input for high side gate driver output HO3, input is in-phase with output
Logic input for low side gate driver output LO1, input is in-phase with output
Logic input for low side gate driver output LO2, input is in-phase with output
Logic input for low side gate driver output LO3, input is in-phase with output
High side gate driver output (phase 1)
High side gate driver output (phase 2)
High side gate driver output (phase 3)
Low side gate driver output (phase 1)
Low side gate driver output (phase 2)
Low side gate driver output (phase 3)
Low side supply return
Lead Assignments
20 leads wide body SOIC
1
HIN1
VB1
20
2
HIN2
HO1
19
3
HIN3
VS1
18
4
LIN1
VB2
17
5
LIN2
HO2
16
6
LIN3
VS2
15
7
COM
VB3
14
8
LO3
HO3
13
9
LO2
VS3
12
10
LO1
VCC
11
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AUIRS2334S
Application Information and Additional Details
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Shoot-Through Protection
Under-Voltage Lockout Protection
Truth Table: Under-Voltage lockout
Advanced Input Filter
Short-Pulse and Noise Rejection
Tolerant to Negative VS Transients
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The AUIRS2334 HVIC is designed to drive high side and low side MOSFET or IGBT power devices. Figures 1
and 2 show the definition of some of the relevant parameters associated with the gate driver output functionality.
The output current that drives the gate of the external power switches is defined as IO. The output voltage that
drives the gate of the external power switches is defined as VHO for the high side and VLO for the low side; this
parameter is sometimes generically called VOUT and in this case the high side and low side output voltages are
not differentiated.
VB
(or VCC)
VB
(or VCC)
IO+
H
(orOLO)
H
(orOLO)
+
VH (or VL )
VS
-
O
IO -
O
VS
(or
)
COM
(or
)
COM
Figure 1: HVIC sourcing current
Figure 2: HVIC sinking current
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AUIRS2334S
Switching and Timing Relationships
The relationship between the input and output signals of the AUIRS2334 HVIC is shown in Figure 3. The
definitions of some of the relevant parameters associated with the gate driver input to output transmission are
given.
LIN
or HIN
50%
50%
PWIN
t ON
LO
or HO
tOFF
tR
tF
PWOUT
90%
10%
90%
10%
Figure 3: Switching time waveforms
During interval A of Figure 4 the HVIC receives the command to turn on both the high and low side switches at
the same time; correspondingly, the shoot-through protection prevents the high and low side signals HO and LO
turn on by keeping them low.
A
HIN
LIN
HO
LO
Figure 4: Input/output timing diagram
Deadtime
The AUIRS2334 HVIC provides an integrated deadtime protection circuitry. The deadtime interval for this HVIC is
fixed; while other ICs within IR‘s HVIC portfolio feature programmable deadtime for greater design flexibility. The
deadtime feature inserts a time interval in which both the gate driver outputs LO and HO are held off; to ensure
that the power switch being turned off has fully turned off before the second power switch is turned on. This
minimum deadtime is automatically inserted whenever the external deadtime commanded by the host
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AUIRS2334S
microcontroller is shorter than DT, while external deadtimes larger than DT are not modified by the gate driver.
Figure 7 illustrates the deadtime interval definition and the relationship between the output gate signals.
The deadtime interval introduced is matched with respect to the commutation from HIN turning off to LIN turning
on, and viceversa. Figure 5 defines the two deadtime parameters DT1 and DT2. The deadtime matching
parameter MDT is defined as the maximum difference between DT1 and DT2.
LIN
HIN
50%
LO
HO
50%
DT1
DT2
50%
50%
Figure 5: Deadtime definition
Matched Propagation Delays
The AUIRS2334 HVIC is designed for propagation delay matching. With this feature, the input to output
propagation delays tON, tOFF are the same for the low side and the high side channels; the maximum difference
being specified by the delay matching parameter MT as defined in Figure 6.
50 %
HIN
LIN
50%
LO
HO
10%
MT
MT
90%
LO
HO
Figure 6: Delay Matching Waveform Definition
Input Logic Compatibility
The AUIRS2334 HVIC is designed with inputs compatible with standard CMOS and TTL outputs with 3.3 V and 5
V logic level signals. Figure 7 shows how an input signal is logically interpreted.
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AUIRS2334S
VIL
Level
Input Logic
Input Signal
VIH
High
Low
Low
Figure 7: HIN & LIN input thresholds
Shoot-Through Protection
The AUIRS2334 is equipped with a shoot-through protection circuitry which prevents cross-conduction of the
power switches. Table 1 shows the input to output relationship in the form of a truth table. Note that the HVIC has
non-inverting inputs (the output is in-phase with the respective input).
HIN
LIN
HO
LO
0
0
0
0
0
1
0
1
1
0
1
0
1
1
0
0
Table 1: Input/output truth table
Under-Voltage Lockout Protection
The AUIRS2334 HVIC provides under-voltage lockout protection on both the VCC low side and logic fixed power
supply and the VBS high side floating power supply. Figure 8 illustrates this concept by considering the VCC (or
VBS) plotted over time: as the waveform crosses the UVLO threshold, the under-voltage protection is entered or
exited.
Upon power up, should the VCC voltage fail to reach the VCCUV+ threshold, the gate driver outputs LO and HO will
remain disabled. Additionally, if the VCC voltage decreases below the VCCUV- threshold during normal operation,
the under-voltage lockout circuitry will shutdown the gate driver outputs LO and HO.
Upon power up, should the VBS voltage fail to reach the VBSUV threshold, the gate driver output HO will remain
disabled. Additionally, if the VBS voltage decreases below the VBSUV threshold during normal operation, the undervoltage lockout circuitry will shutdown the high side gate driver output HO.
The UVLO protection ensures that the HVIC drives external power devices only with a gate supply voltage
sufficient to fully enhance them. Without this protection, the gates of the external power switches could be driven
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AUIRS2334S
with a low voltage, which would result in power switches conducting current while with a high channel impedance,
which would produce very high conduction losses possibly leading to power device failure.
VCC
(or B )
V S
V CCU +
( or V BSU + )
V V
VCCU (or V BSU - )
V V
Time
UVLO Protection
( Gate Driver Outputs Disabled
)
Norma
l
Operation
Norma
l
Operation
Figure 8: UVLO protection
Truth Table: Under-Voltage lockout
Table 2 provides the truth table for the AUIRS2334 HVIC.
The 1st line shows that for VCC below the UVLO threshold both the gate driver outputs LO and HO are disabled.
After VCC returns above VCCUV, the gate driver outputs return functional.
The 2nd line shows that for VBS below the UVLO threshold, the gate driver output HO is disabled. After VBS returns
above VBSUV, HO remains low until a new rising transition of HIN is received.
The last line shows the normal operation of the HVIC.
UVLO VCC
UVLO VBS
Normal operation
VCC
VBS
<VCCUV
15 V
15 V
<VBSUV
15 V
outputs
LO
0
LIN
LIN
HO
0
0
HIN
Table 2: UVLO truth table
Advanced Input Filter
The AUIRS2334 HVIC provides an advanced input filter that improves the input/output pulse symmetry of the
signals processed by the HVIC. This input filter is inserted at the HIN and LIN input pins. The working principle of
the filter is shown in Figures 9 and 10.
Figure 9 shows a typical input filter and the asymmetry it produces on its output signal. The upper waveforms of
Example 1 show an input signal with a pulse duration mush longer than the filtering time tFILIN; the resulting output
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AUIRS2334S
signal has a duration given approximately by the difference between the input signal and tFILIN. The lower
waveforms of Example 2 show an input signal with a pulse duration slightly longer than the filtering time tFILIN; the
resulting output signal has a duration given approximately by the difference between the input signal and tFILIN,
much shorter than it should be.
IN
tFIL,IN
Example 1
Example 1
IN
Example 2
Figure 10 shows the advanced input filter and the symmetry it produces on its output signal. The upper
waveforms of Example 1 show an input signal with a pulse duration much longer than the filtering time tFILIN; the
resulting output signal has approximately the same duration as the input signal. The lower waveforms of Example
2 show an input signal with a pulse duration slightly longer than the filtering time tFILIN; the resulting output signal
has approximately the same duration as the input signal.
OUT
Example 2
tFIL,IN
OUT
Figure 9: Typical input filter
IN
tFIL,IN
OUT
IN
tFIL,IN
OUT
Figure 10: Advanced input filter
Short-Pulse and Noise Rejection
The advanced input filter that improves the input/output pulse symmetry of the signals processed by the HVIC
also helps the rejection of noise spikes and of short pulses on the input signals.
Example 1
IN
Example 2
Input signals with a pulse duration less than the filtering time tFILIN will be filtered out. In Figure 11 Example 1
shows an input signal in the low state with superimposed positive noise spikes of duration less than tFILIN; the
advanced input filter filters out the noise spikes and the output signal remains in the low state. Example 2 shows
an input signal in the high state with superimposed negative noise spikes of duration less than tFILIN; the
advanced input filter filters out the noise spikes and the output signal remains in the high state.
IN
tFIL,IN
OUT
tFIL,IN
OUT
Figure 11: Noise rejection of the advanced input filter
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AUIRS2334S
The measured characteristic of the advanced input filter is shown in Figure 12. On the left side the characteristic
for narrow ON pulses is shown (short positive pulse) while on the left side the characteristic for narrow OFF
pulses is shown (short negative pulse). The x-axis represents the input pulse duration PWIN, while the y-axis the
resulting output pulse duration PWOUT. For pulses with input pulse duration PWIN less than the filtering time tFILIN
the resulting output pulse duration PWOUT is zero because the filter rejects the input signal. For pulses with input
pulse duration PWIN greater than the filtering time tFILIN the resulting output pulse duration PWOUT tracks the input
pulse durations well, the higher the duration the better the symmetry.
Narrow Pulse ON
Narrow Pulse OFF
1000
PWOUT
PWIN
PWOUT
PWIN
800
800
600
600
Time (ns)
Time (ns)
1000
400
400
200
200
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
Time (ns)
Time (ns)
Figure 12: Measured advanced input filter characteristic
The difference between the output pulse duration PWOUT and the input pulse duration PWIN of both the narrow
ON and narrow OFF cases is shown in Figure 13. The x-axis represents the input pulse duration PWIN, while the
y-axis the resulting difference PWOUT–PWIN.
Narrow Pulse ON
Narrow Pulse OFF
120
120
PWOUT-PWIN
PWOUT-PWIN
100
100
80
Short
Pulse
Filtered
60
40
Time (ns)
Time (ns)
80
Short
Pulse
Filtered
60
40
20
20
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Time (ns)
Time (ns)
Figure 13: Difference between the input pulse duration and the output pulse duration
Tolerant to Negative VS Transients
A common problem in today‘s high-power switching converters is the transient response of the switch node‘s
voltage as the power devices switch on and off quickly while carrying a large current. A typical 3-phase inverter
circuit is shown in Figure 14; where we define the power switches and diodes of the inverter.
If the high-side switch (e.g., the IGBT Q1 in Figures 15 and 16) switches off, while the U phase current is flowing
to an inductive load, a current commutation occurs from high-side switch (Q1) to the diode (D2) in parallel with
the low-side switch of the same inverter leg. At the same instance, the voltage node VS1, swings from the positive
DC bus voltage to the negative DC bus voltage.
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AUIRS2334S
DC+ BUS
D1
Q1
Input
Voltage
VS1
Q2
D3
Q3
VS2
U
D2
Q4
D5
Q5
VS3
V
D4
Q6
W
To
Load
D6
DC- BUS
Figure 14: Three phase inverter
DC+ BUS
DC+ BUS
Q1
ON
Q1
OFF
D1
IU
VS1
VS1
IU
Q2
OFF
D2
Q2
OFF
DC- BUS
D2
DC- BUS
Figure 15: Q1 conducting
Figure 16: D2 conducting
Also when the V phase current flows from the inductive load back to the inverter (see Figures 17 and 18), and Q4
IGBT switches on, the current commutation occurs from D3 to Q4. At the same instance, the voltage node, VS2,
swings from the positive DC bus voltage to the negative DC bus voltage.
DC+ BUS
Q3
OFF
DC+ BUS
D3
Q3
OFF
D3
IV
VS2
VS2
IV
Q4
OFF
D4
Q4
ON
DC- BUS
DC- BUS
Figure 17: D3 conducting
Figure 18: Q4 conducting
However, in a real inverter circuit, the VS voltage swing does not stop at the level of the negative DC bus, rather it
swings below the level of the negative DC bus. This undershoot voltage is called ―negative VS transient‖.
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AUIRS2334S
The circuit shown in Figure 19 depicts one leg of the three phase inverter; Figures 20 and 21 show a simplified
illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the power circuit
from the die bonding to the PCB tracks are lumped together in LC and LE for each IGBT. When the high-side
switch is on, VS1 is below the DC+ voltage by the voltage drops associated with the power switch and the
parasitic elements of the circuit. When the high-side power switch turns off, the load current momentarily flows in
the low-side freewheeling diode due to the inductive load connected to VS1 (the load is not shown in these
figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a
negative voltage between VS1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential
than the VS pin).
DC+ BUS
DC+ BUS
+
LC1
D1
Q1
VLC1
-
Q1
ON
VLE1
VS1
IU
-
VS1
LC2
Q2
D2
DC- BUS
-
VLC2
IU
+
D2
Q2
OFF
-
Q2
OFF
VD2
+
-
LE2
Figure 19: Parasitic Elements
D1
Q1
OFF
+
LE1
VS1
DC+ BUS
VLE2
+
DC- BUS
Figure 20: VS positive
DC- BUS
Figure 21: VS negative
In a typical motor drive system, dV/dt is typically designed to be in the range of 3-5 V/ns. The negative VS
transient voltage can exceed this range during some events such as short circuit and over-current shutdown,
when di/dt is greater than in normal operation.
International Rectifier‘s HVICs have been designed for the robustness required in many of today‘s demanding
applications. An indication of the AUIRS2334‘s robustness can be seen in Figure 22, where there is represented
the AUIRS2334 Safe Operating Area at VBS=15V based on repetitive negative VS spikes. A negative VS transient
voltage falling in the grey area (outside SOA) may lead to IC permanent damage; vice versa unwanted functional
anomalies or permanent damage to the IC do not appear if negative Vs transients fall inside SOA.
At VBS=15V in case of -VS transients greater than -16.5 V for a period of time greater than 50 ns; the HVIC will
hold by design the high-side outputs in the off state for 4.5 μs.
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© 2010 International Rectifier
19
AUIRS2334S
Figure 22: Negative VS transient SOA @ VBS=15V
Even though the AUIRS2334 has been shown able to handle these large negative VS transient conditions, it is
highly recommended that the circuit designer always limit the negative VS transients as much as possible by
careful PCB layout and component use.
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© 2010 International Rectifier
20
AUIRS2334S
PCB Layout Tips
Distance between high and low voltage components: It‘s strongly recommended to place the components tied to
the floating voltage pins (VB and VS) near the respective high voltage portions of the device. Please see the Case
Outline information in this datasheet for the details.
Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high
voltage floating side.
Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure
23). In order to reduce the EM coupling and improve the power switch turn on/off performance, the gate drive
loops must be reduced as much as possible. Moreover, current can be injected inside the gate drive loop via the
IGBT collector-to-gate parasitic capacitance. The parasitic auto-inductance of the gate loop contributes to
developing a voltage across the gate-emitter, thus increasing the possibility of a self turn-on effect.
VB
(or CC )
V
H
(orO
)
LO
IGC
CGC
RG
Gate Drive
Loo
p
VS
(or
COM
VGE
)
Figure 23: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor between the VCC and COM pins. This
connection is shown in Figure 24. A ceramic 1 μF ceramic capacitor is suitable for most applications. This
component should be placed as close as possible to the pins in order to reduce parasitic elements.
Up to 600V
Vcc
Vcc
HIN1,2,3
HIN1,2,3
LIN1,2,3
LIN1,2,3
VB1,2,3
HO1,2,3
VS 1,2,3
TO
LOAD
LO1,2,3
COM
GND
Figure 24: Supply capacitor
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© 2010 International Rectifier
21
AUIRS2334S
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients
at the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such
conditions, it is recommended to 1) minimize the high-side source to low-side collector distance, and 2) minimize
the low-side emitter to negative bus rail stray inductance. However, where negative VS spikes remain excessive,
further steps may be taken to reduce the spike. This includes placing a resistor (5 Ω or less) between the VS pin
and the switch node (see Figure 25), and in some cases using a clamping diode between COM and VS (see
Figure 26). See DT04-4 at www.irf.com for more detailed information.
DC+ BU
S
DC+ BUS
VB
VB
C BS
C BS
HO
HO
VS
R VS
VS
To
Load
L
O
RVS
T
Load
o
D VS
L
O
CO
M
CO
M
DC- BUS
DC- BU
S
Figure 25: VS resistor
Figure 26: VS clamping diode
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
Parameter Temperature Trends
Figures 27-44 provide information on the experimental performance of the AUIRS2334 HVIC. The line plotted
in each figure is generated from actual experimental data. A small number of individual samples were tested
at three temperatures (-40 ºC, 25 ºC, and 125 ºC) in order to generate the experimental curve. The line
labeled Exp. consist of three data points (one data point at each of the tested temperatures) that have been
connected together to illustrate the understood temperature trend. The individual data points on the curve
were determined by calculating the averaged experimental value of the parameter (for a given temperature).
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© 2010 International Rectifier
22
600
Turn-off Propagation Delay (ns)
Turn-on Propagation Delay (ns)
AUIRS2334S
M ax.
575
Typ.
550
M in.
525
500
-50
-25
0
25
50
75
100
650
M ax.
600
Typ.
550
M in.
500
450
-50
125
-25
0
Fig. 27. Turn-on Propagation Delay vs. Temperature
75
100
125
Fig. 28. Turn-off Propagation Delay vs. Temperature
70
Turn-Off fall Time (ns) -
175
Turn-On Rise Time (ns)
50
Temperature ( C)
Temperature ( C)
150
125
M ax.
100
Typ.
60
50
M ax.
40
Typ.
M in.
75
M in.
30
-50
-25
0
25
50
75
100
125
-50
-25
0
o
25
50
75
100
125
o
Temperature ( C)
Temperature ( C)
Fig. 29. Turn-on Rise Time vs. Temperature
Fig.30. Turn-off Fall Time vs. Temperature
400
1,100
900
M ax.
700
Typ.
M in.
500
-50
-25
0
25
50
75
100
125
Temperature (oC)
Low Level Output Voltage (mV)
1,300
High Level Output Voltage (mV) .
25
o
o
350
300
M ax
250
Typ.
200
M in.
150
-50
-25
0
25
50
75
100
125
Temperature (oC)
Fig. 31. High Level Output Voltage (IO = 20mA) vs.
Temperature
Fig. 32. Low Level Output Voltage (IO = 20mA) vs.
Temperature
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© 2010 International Rectifier
23
16
12
M ax.
8
4
Typ.
M in.
0
-50
-25
0
25
50
75
100
125
Quiescent VCC Supply Current (mA)
Offset Supply Leakage Current (uA).
AUIRS2334S
1.00
0.75
0.50
M ax.
Typ.
0.25
M in.
0.00
-50
-25
0
o
Input Filter Time (ns) .
Typ.
375
M in.
325
275
225
0
25
50
75
100
125
50
M ax.
40
30
Typ.
M in.
20
-50
-25
0
25
M ax.
11.00
Typ.
10.75
M in.
10.50
75
100
125
VCC Supply UV- Going Threshold (V)
VCC Supply UV+ Going Threshold (V)
11.25
50
100
125
Fig. 36. Quiescent VBS Supply Current vs. Temperature
11.50
25
75
Temperature ( C)
Fig. 35. Input Filter Delay Time vs. Temperature
0
50
o
Temperature ( C)
-25
125
60
o
-50
100
Fig. 34. Quiescent VCC Supply Current vs. Temperature
Quiescent VBS Supply Current (uA)
M ax.
-25
75
Temperature ( C)
Fig. 33. Offset Supply Leakage Current vs. Temperature
-50
50
o
Temperature ( C)
425
25
11.30
11.05
10.80
M ax
.
Typ.
10.55
M in.
10.30
-50
-25
0
25
50
75
100
125
o
o
Temperature ( C)
Temperature ( C)
Fig. 37. VCC Supply Under-voltage Positive Going
Threshold vs. Temperature
Fig. 38. VCC Supply Under-voltage Negative Going
Threshold vs. Temperature
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© 2010 International Rectifier
24
11.50
11.25
M ax.
11.00
Typ.
10.75
M in.
10.50
-50
-25
0
25
50
75
100
125
Temperature (oC)
11.30
11.05
M ax.
10.80
Typ.
10.55
M in.
10.30
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
Fig. 39. VBS Supply Under-voltage Positive Going
Threshold vs. Temperature
Fig. 40. VBS Supply Under-voltage Negative Going
Threshold vs. Temperature
500
500
400
400
Io+ (mA)
Io- (mA)
VBS Supply UV- Going Threshold (V)
VBS Supply UV+ Going Threshold (V)
AUIRS2334S
300
Exp.
200
100
300
Exp.
200
100
0
0
-50
-25
0
25
50
75
100
125
o
-50
-25
0
25
50
75
100
125
o
Temperature ( C)
Temperature ( C)
Fig. 41. Output Low Short Circuit Pulsed Current vs.
Temperature
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Fig. 42. Output High Short Circuit Pulsed Current vs.
Temperature
© 2010 International Rectifier
25
AUIRS2334S
Package Details
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© 2010 International Rectifier
26
AUIRS2334S
Tape and Reel Details
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIMENSION IN MM
E
G
CARRIER TAPE DIMENSION FOR 20SOICW
Metri
Imperial
Cod
Mi c
Ma
Min
Ma
e
n
x
x
A
11.9
12.1
0.46
0.47
03.9
04.1
8
6
B
0.15
0.16
0
0
3
1
C
23.7
24.3
0.93
0.95
0
0
3
6
D
11.4
11.6
0.44
0.45
0
0
8
6
E
10.8
11.0
0.42
0.43
013.2
013.4
50.52
30.52
F
01.5
0n/
0
8n/
G
0.05
0
a
9
a
H
1.5
1.6
0.05
0.06
0
0
9
2
F
D
C
B
A
E
G
H
REEL DIMENSIONS FOR 20SOICW
Metri
Imperial
Cod
Mi c
Ma
Min
Ma
e
n
x
x
A
329.6
330.2
12.97
13.00
020.9
521.4
60.82
10.84
B
5
5
4
4
C
12.8
13.2
0.50
0.51
01.9
02.4
3
9
D
0.76
0.09
5
5
7
6
E
98.0
102.0
3.85
4.01
0n/
030.4
8n/
5
F
1.19
a
0
a
6
G
26.5
29.1
1.0
1.14
0
0
4
5
H
24.4
26.4
0.9
1.03
0
0
6
9
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© 2010 International Rectifier
27
AUIRS2334S
Part Marking Information
Part number
AUIRS2334
Date code
AYWW ?
IR logo
Pin 1
Identifier
? XXXX
?
MARKING CODE
P
Lead Free Released
Lot Code
(Prod mode –
4 digit SPN code)
Assembly site code
Per SCOP 200-002
Non-Lead Free Released
Ordering Information
Standard Pack
Base Part Number
AUIRS2334
Package Type
SOIC20W
Complete Part Number
Form
Quantity
Tube/Bulk
36
AUIRS2334S
Tape and Reel
1000
AUIRS2334STR
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© 2010 International Rectifier
28
AUIRS2334S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the ―AU‖ prefix follow automotive industry and / or customer specific requirements with regards to
product discontinuance and process change notification. All products are sold subject to IR‘s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR‘s standard warranty. Testing and other quality control techniques are used to the extent IR deems
necessary to support this warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of
this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such
altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim
of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer‘s own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation ―AU‖. Buyers acknowledge and agree that, if they use any non-designated products in
automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR‘s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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29
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