Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD3.3V08P-LC Description The ESD3.3V08P-LC is designed to protect MSOP-08 voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Feature Functional Diagram u 50 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects Six High-Speed I/O lines u Low clamping voltage u Working voltages : 3.3V u Low leakage current u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) Applications u USB Series or High-Speed Data Line u Microprocessor based equipment u Video Graphs Cards u Digital Video Interface (DVI) u High Definition Multi-Media Interface (HDMI) u ATM Interfaces u IEEE1394 Fire wire Ports Mechanical Characteristics u MSOP-08 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 25.0 Milligrams (Approximate) u Quantity Per Reel : 1,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 50 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ IEC61000-4-2 (ESD) Air Discharge ±15 Contact Discharge ±8 IEC61000-4-4 (EFT) 40 UN Semiconductor Co.,Ltd. Revision January 06, 2016 KV A www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2016 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD3.3V08P-LC Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Part Number ESD3.3V08P-LC Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) ULC3306 MB 3.3 4.5 1 12 15 VC (@A) 1.5 IR (μA) (Max.) C (pF) (Typ.) 0.1 0.5 Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) tr 100 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Peak Value IPP 80 Percent of Peak Pulse Current % IPP - Peak Pulse Current - % of IPP 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve % of Rated Power 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 Ambient Temperature – TA (ºC) UN Semiconductor Co.,Ltd. Revision January 06, 2016 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2016 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD3.3V08P-LC Characteristic Curves Fig4. ESD Clamping (+8KV Contac per IEC61000-4-2) Fig5. ESD Clamping (-8KV Contac per IEC61000-4-2) MSOP-08 Package Outline & Dimensions Symbol UN Semiconductor Co.,Ltd. Revision January 06, 2016 Nom. Max. Min. Nom. Max. - - 0.043 A1 0.000 - 0.004 0.00 A2 0.030 0.033 0.037 0.75 0.85 0.95 b 0.009 0.012 0.015 0.22 0.30 0.38 - - 1.10 - 0.10 c 0.005 0.006 0.009 0.13 0.15 0.23 D 0.118 BSC E1 0.118 BSC 3.00 BSC E 0.193 BSC 4.90 BSC e 0.026 BSC 0.65 BSC 3.00 BSC 0.016 0.021 0.026 0.40 0.53 0.66 L1 0.037 REF N 8 θ Soldering Footprint Min. Millimeters A L θ Inches 0° 0.95 REF 8 - 8° 0° - aaa 0.004 0.10 bbb 0.003 0.08 ccc 0.010 0.25 8° Symbol Inches Millimeters C 0.1890 4.80 G 0.1448 3.78 P 0.026 0.65 X 0.0161 0.41 Y 0.0402 1.02 Z 0.2291 5.82 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2016 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.