2SK2782 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV) 2SK2782 Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 MAX : RDS (ON) = 0.039 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) 0.95 MAX. 12.0 MIN. z Low drain−source ON-resistance 5.5 ± 0.2 z 4-V gate drive 0.6 ± 0.15 Absolute Maximum Ratings (Ta = 25°C) 2.3 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V VGSS ±20 V (Note 1) ID 20 A Pulse (Note 1) Gate−source voltage DC Drain current IDP 50 A Drain power dissipation (Tc = 25°C) PD 40 W Single-pulse avalanche energy (Note 2) EAS 156 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 1 2 3 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE ― JEITA SC-64 TOSHIBA 2-7B5B Weight: 0.36 g (typ.) 6.8 MAX. 5.2 ± 0.2 5.5 ± 0.2 temperature/current/voltage and the significant change in temperature, etc.) operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability 3 JEDEC Note: Using continuously under heavy loads (e.g. the application of high may cause this product to decrease in the reliability significantly even if the 0.6 ± 0.15 0.95 MAX. 0.6 MAX. 2.3 2.3 1 Thermal Characteristics 2 2.3 Unit Thermal resistance, channel to case Rth (ch−c) 3.125 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W 3 2.3 0.1 ± 0.1 (i.e. reliability test report and estimated failure rate, etc). Max 2.5 MAX. Precautions”/“Derating Concept and Methods”) and individual reliability data Symbol 0.6 MAX. 0.6 ± 0.15 upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Characteristic 2 1 1.5 ± 0.2 VDSS 2.5 MAX. Drain−source voltage 1.1 ± 0.2 Unit 1.7 ± 0.2 Rating 9.6 ± 0.3 Symbol 1.1 ± 0.2 Characteristic 0.6 MAX. 2.3 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 2 1 3 Note 1: Ensure that the channel temperature does not exceed 150°C. JEDEC ― Note 2: VDD = 25 V, Tch = 25°C (initial), L = 530 μH, RG = 25 Ω, ID = 20 A JEITA ― Note 3: Repetitive rating: pulse width limited by maximum channel temperature TOSHIBA 2-7B7B Weight: 0.36 g (typ.) This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-12-21 2SK2782 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 5 A — 0.06 0.09 VGS = 10 V, ID = 10 A — 0.039 0.055 VDS = 10 V, ID = 10 A 7 11 — — 880 — — 90 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 330 — tr — 15 — ton — 25 — Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time Ω S pF ns Fall time tf — 30 — Turn−off time toff — 100 — Total gate charge (gate−source plus gate−drain) Qg — 25 — Gate−source charge Qgs — 19 — Gate−drain (“Miller”) charge Qgd — 6 — VDD ≈ 48 V, VGS = 10 V, ID = 20 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 20 A Pulse drain reverse current (Note 1) IDRP — — — 50 A Forward voltage (diode) VDSF — — −2.0 V Reverse recovery time trr — 60 — ns Reverse recovery charge Qrr — 45 — μC IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A/μs Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K2782 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SK2782 3 2009-12-21 2SK2782 4 2009-12-21 2SK2782 RG = 25 Ω VDD = 25 V, L = 530 μH 5 EAS = B VDSS 1 ⎛ ⎞ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ 2 ⎝ B VDSS − VDD ⎠ 2009-12-21 2SK2782 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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