BDY25A MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) FEATURES HIGH CURRENT FAST SWITCHING HIGH RELIABILITY SCREENING OPTIONS AVAILABLE 3 (case) APPLICATIONS 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • • SWITCHING CIRCUITS LARGE SIGNAL/POWER AMPLIFIERS TO3 (TO204AA) Pin 1 = Base Pin 2 = Emitter Case = Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO VCEO VEBO IC IB Ptot TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current Total Power Dissipation at Tcase = 25°C Derate above 25°C Junction Temperature Storage Temperature 200V 140V 10V 6A 3A 50W 0.29 W/°C 200°C -65 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7595, ISSUE 1 BDY25A THERMAL CHARACTERISTICS Rth j-case Max 3.5 °C/W Min. Typ. Max. Unit Thermal resistance to case Unit ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated) Parameter Test Conditions ICEO Collector Cut-Off Current VCE = 140V IB = 0 1.0 ICES Collector Cut-Off Current VCE = 180V VBE = 0 1.0 IEBO Emitter Cut-Off Current VEB = 10V IC = 0 1.0 V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 50mA IB = 0 V(BR)CBO* Collector-Base Breakdown Voltage IC = 3mA VCE(sat)* Collector-Emitter Saturation Voltage IC = 2.0A IB = 0.25A 0.6 VBE(sat)* Base-Emitter Saturation Voltage IC = 2.0A IB = 0.25A 1.2 hFE* Forward-current transfer ratio IC = 1.0A VCE = 4.0V IC = 2.0A VCE = 4.0V IE = 0 VCB = 10V mA 140 200 V 55 15 20 45 65 120 DYNAMIC CHARACTERISTICS Cobo Output Capacitance FT Transition Frequency Ton Turn-on time IC= 5.0A IB1= 1.0A 0.3 0.5 Toff Turn-off time IC= 5.0A IB1=-IB2= 1.0A 1.5 2.0 f = 1.0MHz IC = 0.5A VCE = 15V f = 10.0MHz 10 pF MHz µs * Pulse test tp = 300µs, δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7595, ISSUE 1