2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S (typ.) z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −200 V Gate−source voltage VGSS ±20 V JEDEC ― ID −12 A JEITA ― Drain power dissipation (Tc = 25°C) PD 150 W TOSHIBA Channel temperature Tch 150 °C Weight: 9.75 g (typ.) Storage temperature range Tstg −55 to 150 °C Drain current (Note 1) 2-21F1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-10 2SJ201 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut−off current IDSS VDS = −200 V, VGS = 0 ― ― −1.0 mA Gate leakage current IGSS VDS = 0, VGS = ±20 V ― ― ±0.5 μA V (BR) DSS ID = −10 mA, VGS = 0 −200 ― ― V VGS (OFF) VDS = −10 V, ID = −0.1 A −0.8 ― −2.8 V VDS (ON) ID = −8 A, VGS = −10 V ― −2.0 −5.0 V Forward transfer admittance |Yfs| VDS = −10 V, ID = −5 A ― 5.0 ― S Input capacitance Ciss VDS = −30 V, VGS = 0, f = 1 MHz ― 1500 ― Output capacitance Coss VDS = −30 V, VGS = 0, f = 1 MHz ― 400 ― Reverse transfer capacitance Crss VDS = −30 V, VGS = 0, f = 1 MHz ― 230 ― Drain−source breakdown voltage Gate−source cut−off voltage (Note 2) Drain−source saturation voltage pF Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VGS (OFF) Classification O: −0.8 to −1.6, Y: −1.4 to −2.8 This transistor is an electrostatic-sensitive device. Please handle with caution. Marking Part No. (or abbreviation code) TOSHIBA 2SJ201 Lot No. JAPAN Note 3 Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-10 2SJ201 3 2009-12-10 2SJ201 Switching Time Test Circuit Waveforms 4 2009-12-10 2SJ201 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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