UMS CHR2299-99F 40-44ghz down converter Datasheet

CHR2299-99F
RoHS COMPLIANT
40-44GHz Down converter
Description
The CHR2299-99F is a down converter
multifunction chip, which integrates LO X4
multiplier, a balanced cold FET mixer and a
RF LNA.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a power
pHEMT process, 0.15µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
IF_I
X4
IF_Q
Conversion Gain (dB)
■ 40-44GHz RF bandwidth
■ 21dB conversion gain
■ x4 LO frequency multiplier
■ x4 LO output port
■ > 12dB image rejection
■ DC bias: Vd = 4V @ Id = 240mA
■ Chip size 3.97x2.25x0.1mm
30
28
26
24
22
20
18
16
14
12
10
supradyne
39
40
41
42
DA
DX
GX
G3
GM
RF_IN
It is available in chip form.
Main Features
LO_IN
4LO_OUT
GaAs Monolithic Microwave IC
infradyne
43
44
45
RF_frequency (GHz)
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
F_RF
RF frequency range
40
44
GHz
F_LO
LO frequency range
9.5
11.5
GHz
F_IF
IF frequency range
DC
2.0
GHz
Gc
Conversion gain
Ref. : DSCHR22992012 - 19 Jan 12
21
1/12
dB
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Electrical Characteristics
Tamb. = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
F_RF
RF frequency range
40
44
GHz
F_LO
LO frequency range
9.5
11.5
GHz
F_IF
IF frequency range
DC
2.0
GHz
Gc
Conversion gain
21
dB
Im rej
Image rejection
12
dB
P_LO
LO Input power
0
dBm
Noise figure for IF>0.1GHz
4.5
dB
Intermodulation level at Pin2tones = -30dBm
45
dBc
RL_RF
RF Return Loss
6
dB
RL_LO
LO Return Loss
12
dB
P_4FLO
Output power at 4LO_OUT port
-1
dBm
4xFLO leakage on RF port
-38
dBm
4
V
NF
IMD3
4xFLO_Lk
DX, DA
LO multiplier, buffer and LNA biasing
GM
Mixer gate biasing
-0.6
V
G3
LO buffer gate biasing
-0.3
V
GX
Multiplier gate biasing
-1.2
V
IdT
Total biasing current
240
mA
Electrostatic discharge sensitive device observe handling precautions!
These values are representative of chip on board measurements with a 90° hybrid coupler.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
DX, DA
LO multiplier, buffer and LNA biasing
4.5
IdT
Total biasing current
300
GM, G3, GX Gate bias voltage
-2; +0.6
P_LO
Maximum peak input LO power overdrive (2)
10
(2)
Pin_RF
Maximum peak input RF power overdrive
-5
Tj
Junction temperature
175
Ta
Operating temperature range
-40 to +85
Tstg
Storage temperature range
-55 to +155
RTh
Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W
80
(1)
(2)
Unit
V
mA
V
dBm
dBm
°C
°C
°C
°C/W
Operation of this device above anyone of these parameters may cause permanent damage
Duration < 1s
Ref. : DSCHR22992012 - 19 Jan 12
2/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements in Temperature
DX= DA = 4V, GM = -0.6V, G3 = -0.3V, GX = -1.2V, P_LO = 0dBm
These values are representative of onboard measurements as defined on the section
”Evaluation mother board”. The losses are de-embedded.
Conversion Gain versus RF frequency & temperature
RF = 4LO-IF; IF = 1GHz
30
Conversion Gain (dB)
28
26
24
22
20
18
16
14
-40 °C
12
+25 °C
+85 °C
10
39
40
41
42
43
44
45
RF_frequency (GHz)
Conversion Gain versus RF frequency & temperature
RF = 4LO+IF; IF = 1GHz
30
Conversion Gain (dB)
28
26
24
22
20
18
16
14
-40 °C
12
+25 °C
+85 °C
10
39
40
41
42
43
44
45
RF_frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
3/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements in Temperature
Conversion Gain versus RF frequency & temperature
RF = 4LO+/-IF; IF = 3.5GHz
Conversion Gain versus RF frequency & temperature
RF = 4LO+IF; IF = 6GHz
30
28
Conversion Gain (dB)
26
24
22
20
18
16
14
12
-40 °C
+25 °C
+85 °C
10
39
40
41
42
43
44
45
RF_frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
4/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements in Temperature
Image rejection versus RF frequency & temperature
RF = 4LO+/-IF; IF = 2GHz
30
-40 °C; sup
inf
+25 °C; sup
inf
+85 °C; sup
inf
Image Rejection (dB)
25
20
15
10
5
39
40
41
42
43
44
45
RF_frequency (GHz)
Image rejection versus RF frequency & temperature
RF = 4LO+IF; IF = 6GHz
Image Rejection (dB)
50
45
40
35
-40 °C
+25 °C
+85 °C
30
39
40
41
42
43
44
45
RF_frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
5/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements
IMD3 versus RF frequency & Input power
Supradyne: IF = 2GHz
100
100
90
90
80
80
70
70
IMD3 (dB)
IMD3 (dB)
Infradyne: IF = 2GHz
60
50
60
50
40
40
30
38.5 GHz
42.5 GHz
20
-40
-35
30
40.5 GHz
44.5 GHz
-30
40.5 GHz
42.5 GHz
44.5 GHz
20
-25
-40
-20
-35
-30
-25
-20
Input power 2tones (dBm)
Input power 2tones (dBm)
Input IP3 versus Temperature & Input power
Supradyne: RF = 40.5GHz; IF = 3.5GHz
10
10
8
8
6
6
4
4
Input IP3 (dBm)
Input IP3 (dBm)
Supradyne: RF = 40.5GHz; IF = 2GHz
2
0
-2
-4
2
0
-2
-4
-6
-6
-8
-40 °C
+25 °C
-8
+85 °C
-40 °C
+25 °C
+85 °C
-10
-10
-40
-35
-30
-25
-20
-40
-35
Ref. : DSCHR22992012 - 19 Jan 12
-30
-25
-20
Input power 2tones (dBm)
Input power 2tones (dBm)
6/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Typical chip on board Measurements
LO harmonics Power level on RF port
-30
-35
n*LO power (dBm)
-40
-45
-50
-55
-60
-65
-70
P_LO
-75
P_2LO
P_4LO
-80
8
9
10
11
12
13
14
LO Frequency (GHz)
RF & LO return loss (in the connectors plan)
0
Return loss (dB)
-5
-10
-15
-20
-25
LO return loss
RF return loss
-30
0
5
10
15
20
25
30
35
40
45
50
Frequency (GHz)
Ref. : DSCHR22992012 - 19 Jan 12
7/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Mechanical data
Chip thickness: 100 µm, units: µm, tol:+/- 35 µm
DC pads = 92x92 µm, RF pads = 178x114 µm
Pin number
1
2
3
4
5
6
7, 8
9
10
Pin name
RF_IN
DA
DX
GX
G3
GM
IF_I & IF_Q
4LO_OUT
LO_IN
Description
RF input
LNA drain voltage
Multiplier & Buffer drain voltage
Multiplier gate voltage
LO buffer gate voltage
Mixer gate voltage
IF outputs
Output 4xLO frequency
LO input
Recommended biasing
Pin Name
GM
G3
GX
DX
DA
Pin Number
6
5
4
3
2
Ref. : DSCHR22992012 - 19 Jan 12
Parameter
Mixer gate voltage
LO buffer gate voltage
X4 gate voltage
X4 and buffer drain voltage
LNA Drain voltage
8/12
Nominal value
-0.6 V
-0.3 V
-1.2 V
4V
4V
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Chip assembly
Optionnal
4LO output
LO input
RF input
IF_I & IF_Q
to 90° hybrid coupler
Capacitors
120pF
DC Suply
Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Ref. : DSCHR22992012 - 19 Jan 12
9/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Evaluation mother board
Based on typically Ro4003 / 8 mils or equivalent.
Decoupling capacitors of 10nF 10% and chip 120pF 10%
90° hybrid coupler: 1-2GHz or 2-4GHz
Ref. : DSCHR22992012 - 19 Jan 12
10/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
DC Schematic
LO multiplier and buffers: 4V, 105mA
DX
IF
I
LO out
20 
50 
70 
40 
500 
50 
2 k
30 mA
11.3 
15 mA
30 mA
30 mA
11.3 
LO
112 
150 
20 
IF
Q
500 
200 
200 
200 
500 
LO amplifier
X2 multiplier
X2 multiplier
GX
Mixer
GM
4LO amplifier
G3
LNA: 4V, 140mA
DA
6
3.7 k
3
3.44 k
16 
100 
17 mA
RF
160 
Ref. : DSCHR22992012 - 19 Jan 12
50 
3
3.44 k
23 
34 mA
450 
25 
11/12
2
3.42 k
100 
34 mA
450 
25 
54 mA
450 
16 
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR2299-99F
40-44GHz Down converter
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHR2299-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHR22992012 - 19 Jan 12
12/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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