SUTEX DN3135N8 N-channel depletion-mode vertical dmos fet Datasheet

DN3135
N-Channel Depletion-Mode Vertical DMOS FETs
Features
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General Description
The Supertex DN3135 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
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Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Product marking for TO-236AB:
N1S
where
= 2-week alpha date code
Product marking for TO-243AA:
DN1S
where
= 2-week alpha date code
Ordering Information
BVDSX/
BVDGX
RDS(ON)
(max)
(min)
350V
35Ω
180mA
Package Options
IDSS
TO-236AB1
TO-243AA2
DN3135K1
DN3135N8
DN3135K1-G
DN3135N8-G
-G indicates package is RoHS compliant (‘Green’)
Notes: 1Same as SOT-23, 2Same as SOT-89.
Pin Configurations
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSX
Drain-to-gate voltage
BVDGX
Gate-to-source voltage
±20V
Operating and storage
temperature
-55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
D
D
S
G
G
D
TO-236AB
TO-243AA
(Top View)
(top view)
S
DN3135
Thermal Characteristics
Package
ID
(continuous)1
ID
(pulsed)
Power Dissipation
@TA = 25OC
Θjc (OC/W)
Θja (OC/W)
IDR1
IDRM
TO-236AB
720mA
300mA
0.36W
200
350
72mA
300mA
300mA
2
135mA
300mA
TO-243AA
135mA
1.3W
34
97
2
Notes:
1. ID (continuous) is limited by max rated Tj.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Units
BVDSX
Drain-to-source breakdown voltage
350
-
-
V
VGS = -5.0V, ID = 100µA
VGS(OFF)
Gate-to-source OFF voltage
-1.5
-
-3.5
V
VDS = 15V, ID = 10µA
ΔVGS(OFF)
IGSS
ID(OFF)
Change in VGS(OFF) with temperature
-
-
4.5
mV/ C
VDS = 15V, ID = 10µA
Gate body leakage current
-
-
100
nA
VGS = ±20V, VDS = 0V
-
-
1.0
µA
VDS = Max rating, VGS = -5.0V
Drain-to-source leakage current
IDSS
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = -5.0V, TA = 125OC
180
-
-
mA
VGS = 0V, VDS = 15V
Static drain-to-source ON-state
resistance
-
-
35
Ω
VGS = 0V, ID = 150mA
Change in RDS(ON) with temperature
-
-
1.1
%/OC
VGS = 0V, ID = 150mA
140
-
-
mmho
VDS = 10V, ID = 100mA
Saturated drain-to-source current
RDS(ON)
ΔRDS(ON)
GFS
Forward transconductance
CISS
Input capacitance
-
60
120
COSS
Common source output capacitance
-
6.0
15
CRSS
Reverse transfer capacitance
-
1.0
10
td(ON)
Turn-ON delay time
-
-
10
Rise time
-
-
15
Turn-OFF delay time
-
-
15
Fall time
-
-
20
Diode forward voltage drop
-
-
Reverse recovery time
-
800
tr
td(OFF)
tf
VSD
trr
O
Conditions
pF
VGS = -5.0V,
VDS = 25V,
f = 1MHz
ns
VDD = 25V,
ID = 150mA,
RGEN = 25Ω,
VGS = 0v to -10V
1.8
V
VGS = -5.0V, ISD = 150mA
-
ns
VGS = -5.0V, ISD = 150mA
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
0V
90%
INPUT
-10V
PULSE
GENERATOR
10%
t(ON)
td(ON)
VDD
t(OFF)
tr
10%
td(OFF)
tF
D.U.T.
10%
OUTPUT
90%
OUTPUT
RGEN
INPUT
0V
RL
90%
2
DN3135
3-Lead TO-236AB (SOT-23) Package Outline (K1)
0.0173 ± 0.0027
(0.4394 ± 0.0685)
3
0.0906 ± 0.0079
0.0512 ± 0.004
(2.299 ± 0.199)
1
2
(1.3004 ± 0.1016)
Measurement Legend =
Dimensions in Inches
(Dimensions in Millimeters)
0.0207 ± 0.003
0.0754 ± 0.0053
(0.5257 ± 0.0762)
(1.915 ± 0.135)
Top View
0.115 ± 0.005
(2.920 ± 0.121)
0.0197
0.0035 ± 0.0025
(0.50)
NOM
(0.0889 ± 0.0635)
0.0400 ± 0.007
(1.016 ± 0.178)
0.0043 ± 0.0009
0.0210 ± 0.003
(0.1092 ± 0.0229)
(0.5334 ± 0.076)
0.0382 ± 0.003
(0.9690 ± 0.0762)
End View
Side View
3
DN3135
3-Lead TO-243AA (SOT-89) Surface Mount Package (N8)
4.50 ± 0.10
1.72 ± 0.10
1.50 ± 0.10
0.40 ± 0.05
Exclusion Zone
No Vias/Traces in
this area. Shape
of pad may vary.
4.10 ± 0.15
2.21 ± 0.08
2.45 ± 0.15
1.05 ± 0.15
0.5 ± 0.06
0.42 ± 0.06
1.50 BSC
3.00 BSC
Top View
Side View
Bottom View
Notes:
All dimensions are in millimeters; all angles in degrees.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-DN3135
A012307
4
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