CM100TJ-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts A D E F U G NOT CONNECTED H NOT CONNECTED 17 19 18 16 15 20 B 14 Tc J K M N S 21 13 L Tc L T 1 3 4 2 9 7 8 5 6 P 10 11 12 R Q Y X V W C 21 13 1 5 9 2 6 10 3 7 11 4 8 12 20 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking 14 19 17 15 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.78 121.5 M 0.15 3.81 B 2.42 61.5 N 0.75 19.05 C 0.67 17.0 P 0.15 3.81 D 4.33±0.01 Q 3.00 76.2 E 3.00 76.2 R 0.60 15.24 110.0±0.25 F 0.75 19.05 S 0.45 1.15 G 0.60 15.24 T 0.04 1.0 H 0.15 3.81 U 0.22 Dia. J 2.26 K 1.97±0.01 L 1.07 57.5 50.0±0.25 27.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TJ-24F is a 1200V (VCES), 100 Ampere SixIGBT IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 100 24 5.5 Dia. V 0.12 3.0 W 0.81 20.5 X 3.72 94.5 Y 4.62 118.11 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TJ-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Symbol CM100TJ-24F Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) Pc 390 Watts Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current (Tc = 25°C)** Mounting Torque, M5 Mounting – 31 in-lb Weight – 300 Grams Viso 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts IC = 100A, VGE = 15V, Tj = 125°C – – Volts Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V – 1100 – nC Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Max. 1.9 3.3 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TJ-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions Min. VCE = 10V, VGE = 0V, f = 1MHz – – – – VCC = 600V, Typ. Max. – – 39 – – 1.7 1.6 100 Units nf nf nf ns tr IC = 100A, – – 50 ns td(off) VGE1 = VGE2 = 15V, – – 400 ns tf RG = 3.1⍀, – – 300 ns Diode Reverse Recovery Time** trr Inductive Load – – 150 ns Diode Reverse Recovery Charge** Qrr Switching Operation – 4.1 – µC Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Units Rth(j-c)Q Per IGBT 1/6 Module, Tc Reference – – 0.32 °C/W – – 0.36 °C/W – 0.18 – °C/W – 0.20 – °C/W – 0.13 – °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module, Tc Reference Point per Outline drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, Tc Reference Point Under Chip Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/6 Module, Tc Reference Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TJ-24F Trench Gate Design Six IGBTMOD™ 100 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 160 9.5 9 120 8.5 80 40 8 0 VGE = 15V Tj = 25°C Tj = 125°C 2.5 2.0 1.5 1.0 0.5 1 2 3 4 0 3 IC = 200A IC = 100A 2 IC = 40A 1 40 80 120 160 0 200 4 8 12 16 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 100 0 1.0 2.0 3.0 101 100 Coes 100 101 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE 102 Irr 101 trr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 25°C Inductive Load REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 td(on) tr 101 VCC = 600V VGE = ±15V RG = 3.1 Ω Tj = 125°C Inductive Load IC = 100A 16 12 VCC = 400V 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 102 Cres 10-1 10-1 4.0 SWITCHING TIME, (ns) 101 tf td(off) Cies VCC = 600V 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CAPACITANCE, Cies, Coes, Cres, (nF) 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 10-2 4 10-1 10-2 Per Unit Base Single Pulse TC = 25°C 10-3 0 500 1000 GATE CHARGE, QG, (nC) 1500 101 Rth(j-c) = 0.32°C/W (IGBT) Under Chip = 0.18°C/W Rth(j-c) = 0.36°C/W (FWDi) 10-1 8 0 20 103 VGE = 0V Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 REVERSE RECOVERY TIME, trr, (ns) Tj = 25°C 0 0 0 4 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 5 3.0 15 11 10 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10-5 TIME, (s) 10-4 10-3 10-3