HIGH SPEED CMOS LOGIC IC ELM7SH00xB 2-input NAND gate ■General description ELM7SH00xB is CMOS 2-input NAND gate which is suitable for battery-operated devices because of its ultra high speed opeartion performed by low voltage. The low power consumption contributes to longer battery life, which makes long time operation of devices possible. The internal circuit which provides high noise immunity and stable output is composed of 3 stages, including buffered output. ■Features • • • • • • • Same electrical characteristic and high speed operation as 74VHC series Low consumption current : Idd=1.0µA(Max.)(Top=25°C) Wide power voltage range : 2.0V to 5.5V Wide input voltage range : Vih=5.5V(Max.)(Vdd=0 to 5.5V) High speed : Tpd=2ns(Typ.)(Vdd=5.0V) Small package : SOT-25, SC-70-5(SOT-353) Same function and pin configuration as ELM7SxxB ■Application • • • • • • • Cell phones Digital cameras Portable electrical appliances like PDA, etc. Computers and peripherals Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc. Modification inside print board, adjustment of timing, solution to noise Power voltage change from 5V to 3V ■Selection guide ELM7SH00xB-EL Symbol a Function b Package c d Product version Taping direction 00: 2-input NAND gate M: SOT-25 T : SC-70-5(SOT-353) B EL: Refer to PKG file ELM7SH 0 0 x B - EL ↑ ↑ ↑ ↑ a b c d ■Maximum absolute ratings Parameter Power supply voltage Input voltage Output voltage Input protection diode current Output parasitic diode current Output current VDD/GND current Power dissipation Storage temperature Symbol Vdd Vin Vout Iik Iok Iout Idd, Ignd Pd Tstg Limit -0.5 to +6.0 -0.5 to +6.0 -0.5 to Vdd+0.5 -20 ±20 ±25 ±50 150 -65 to +150 3- 1 Unit V V V mA mA mA mA mW °C HIGH SPEED CMOS LOGIC IC ELM7SH00xB 2-input NAND gate ■Suggested operating condition Parameter Power voltage Input voltage Output voltage Operating temperature Symbol Vdd Vin Vout Top High-input down-time tr, tf Limit 2.0 to 5.5 0 to 5.5 0 to Vdd -40 to +85 Vdd=3.3±0.3V Vdd=5.0±0.5V Unit V V V °C 0 to 200 0 to 100 ns ■Pin configuration TOP VIEW 5 1 Pin No. 1 2 3 4 5 4 2 3 Pin name INB INA GND OUTX VDD INA Low Low High High Input INB Low High Low High Output OUTX High High High Low ■DC electrical characteristics Parameter Sym. Vih Input voltage Vil Voh Output voltage Vol Input current Static current Iin Idd Vdd 2.0 3.0 5.5 2.0 3.0 5.5 2.0 3.0 4.5 3.0 4.5 2.0 3.0 4.5 3.0 4.5 5.5 5.5 Min. 1.50 2.10 3.85 1.90 2.90 4.40 2.58 3.94 -0.1 Top=25°C Top=-40 to +85°C Unit Condition Typ. Max. Min. Max. 1.50 2.10 V 3.85 0.50 0.50 0.90 0.90 V 1.65 1.65 2.00 1.90 3.00 2.90 Vin=Vil Ioh=-50μA 4.50 4.40 V or 2.48 Vih Ioh=-4mA 3.80 Ioh=-8mA 0.10 0.10 0.10 0.10 Iol=50μA 0.10 0.10 V Vin=Vih 0.36 0.44 Iol=4mA 0.36 0.44 Iol=8mA 0.1 -1.0 1.0 μA Vin=Vdd or GND 1.0 10.0 μA Vin=Vdd or GND 3- 2 HIGH SPEED CMOS LOGIC IC ELM7SH00xB 2-input NAND gate ■AC electrical characteristics Parameter Sym. Propagation delay-time tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Input capacity Equivalent inner capacity Cin Vdd CL 3.3±0.3 15 3.3±0.3 50 5.0±0.5 15 5.0±0.5 50 Min. 5.0 Cpd Top=25°C Typ. 3.7 3.3 5.4 4.6 2.7 2.5 3.6 3.5 Max. 7.9 7.9 11.4 11.4 5.5 5.5 7.5 7.5 2.0 10.0 Top=-40 to +85°C Unit Min. Max. 1.0 9.5 1.0 9.5 1.0 13.0 1.0 13.0 ns 1.0 6.5 1.0 6.5 1.0 8.5 1.0 8.5 10.0 tr=tf=3ns Condition Refer to test circuit pF Vin=Vdd or GND 9.3 pF f=1MHz * Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit.Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd • Vdd • fin+Idd ■Test circuit ■Measured wave pattern 3ns Vdd Pulse Oscillator OUTPUT INPUT INPUT 90% 50% 90% 50% Vdd 10% GND Voh OUTPUT CL 50� 10% 3ns 50% tPHL 50% tPLH * Output should be opened when measuring current consumption. ■Marking SC-70-5 a b SOT-25 c a b Symbol a b c c 3- 3 Mark F 1 A to Z (except I, O, X) Content ELM7SH series ELM7SH00xB Lot No. Vol