RY A IN IM EL PR Central CXT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT953 type is a high current, high voltage silicon PNP transistor. Packaged in the SOT-89 surface mount case, the CXT953 is ideal for industrial and consumer applications requiring high energy efficiency in a small package. MARKING CODE: FULL PART NUMBER NPN complement: CXT853 SOT-89 CASE FEATURES: • Low Saturation Voltage: VCE(SAT) = 0.420V Max @ IC = 4.0A APPLICATIONS: • Power Management • DC/DC Converters Y R A MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO Collector-Base Voltage I L Operating and Storage E R P 100 V 6.0 V 5.0 A PD 1.2 W TJ,Tstg -65 to +150 °C ΘJA 104 °C/W VEBO Power Dissipation Thermal Resistance UNITS V VCEO Collector Current Junction Temperature 140 N I M Collector-Emitter Voltage Emitter-Base Voltage IC ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO • Motor Driving • Switching TYP MAX UNITS VCB=100V 50 nA VCB=100V, TA=100°C 1.0 μA ICER IEBO VCE=100V, RBE ≤ 1kΩ VEB=6.0V 50 nA 10 nA BVCBO IC=100μA IC=10mA, RBE ≤ 1kΩ 140 170 140 150 V IC=10mA IE=100μA 100 120 V 6.0 9.0 BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) V V IC=100mA, IB=10mA IC=1.0A, IB=100mA 20 50 mV 90 120 mV IC=2.0A, IB=200mA IC=4.0A, IB=400mA IC=4.0A, IB=400mA 170 220 mV 320 420 mV 1.0 1.2 V R0 (1-February 2006) Central RY TM Semiconductor Corp. INA IM L RE P CXT953 SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP MAX hFE hFE 100 200 300 SYMBOL VCE=1.0V, IC=10mA VCE=1.0V, IC=1.0A VCE=1.0V, IC=3.0A 100 50 70 VCE=1.0V, IC=4.0A VCE=1.0V, IC=10A 30 45 hFE fT Cob VCE=10V, VCB=10V, hFE hFE IC=100mA, f=50MHz IE=0, f=1.0MHz UNITS 15 150 MHz 45 pF SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: CXT953 R0 (1-February 2006)