Jiangsu EMD3 Dual digital transistors (npnpnp) Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
EMD3
Digital Transistors (Built-in Resistors)
Dual Digital Transistors (NPN+PNP)
SOT-563
FEATURES
z
DTA114E and DTC114E transistors are built-in a package.
z
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
z
1
MARKING: D3
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-10~40
V
IO
50
IC(MAX)
100
Power dissipation
Pd
150(TOTAL)
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
VI(off)
Min.
Typ
Max.
0.5
Unit
V
Conditions
VCC=5V,IO=100µA
VO=0.3V ,IO=10mA
VI(on)
3
Output voltage
VO(on)
0.3
V
IO/II=10mA/0.5mA
Input current
II
0.88
mA
VI=5V
Output current
IO(off)
0.5
μA
VCC=50V, VI=0
DC current gain
GI
30
Input resistance
R1
7
10
13
Resistance ratio
R2/R1
0.8
1
1.2
Transition frequency
fT
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VO=5V,IO=5mA
250
1
KΩ
MHz
VCE=10V ,IE=-5mA,f=100MHz
E,May,2015
Typical Characteristics
DTA114E(PNP)
ON Characteristics
OFF Characteristics
-100
-10
VO=-0.3V
-30
(mA)
(V)
-3
-1
OUTPUT CURRENT
INPUT VOLTAGE
IO
VI(ON)
-10
Ta=25℃
-3
Ta=100℃
-1
Ta=100℃
-0.3
Ta=25℃
-0.1
-0.03
-0.3
-0.1
-0.1
-0.3
-3
-1
-30
-10
OUTPUT CURRENT
IO
GI
IO
——
-0.01
-0.0
-100
VCC=-5V
-0.4
(mA)
-0.8
-1.2
INPUT VOLTAGE
VI(OFF)
VO(ON) ——
-1000
1000
-1.6
-2.0
(V)
IO
VO=-5V
IO/II=20
-300
VO(ON)
100
Ta=100℃
30
OUTPUT VOLTAGE
DC CURRENT GAIN
GI
(mV)
300
Ta=25℃
10
Ta=100℃
-100
Ta=25℃
-30
3
1
-0.1
-10
-0.3
-3
-1
OUTPUT CURRENT
CO
12
——
-10
IO
-100
-30
-1
-10
-3
OUTPUT CURRENT
(mA)
PD
VR
——
-100
-30
IO
(mA)
Ta
200
f=1MHz
Ta=25℃
150
PD
8
POWER DISSIPATION
OUTPUT CAPACITANCE
CO
(pF)
(mW)
10
6
4
100
50
2
0
0
-0
-4
-8
-12
REVERSE BIAS VOLTAGE
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-16
VR
-20
0
(V)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
E,May,2015
Typical Characteristics
DTC114E(NPN)
OFF Characteristics
ON Characteristics
10
100
VCC=5V
VO=0.3V
Ta=100℃
(mA)
(V)
10
1
OUTPUT CURRENT
IO
VI(ON)
INPUT VOLTAGE
25℃
3
30
Ta=25℃
3
100℃
1
0.1
0.03
0.3
0.1
0.1
0.3
1
0.3
10
3
OUTPUT CURRENT
VO(ON)
IO
——
0.01
0.0
100
30
0.4
(mA)
0.8
1.2
INPUT VOLTAGE
VI(OFF)
IO
1
GI
1000
——
1.6
IO
IO/II=20
VO=5V
Ta=100℃
25℃
GI
0.3
Ta=100℃
VO(ON)
25℃
DC CURRENT GAIN
(V)
300
OUTPUT VOLTAGE
2.0
(V)
0.1
100
30
10
0.03
3
0.01
3
1
10
OUTPUT CURRENT
CO
10
——
30
IO
1
0.1
100
0.3
3
1
OUTPUT CURRENT
(mA)
VR
PD
200
——
10
IO
30
100
125
150
(mA)
Ta
f=1MHz
Ta=25℃
POWER DISSIPATION
6
OUTPUT CAPACITANCE
150
PD
CO
(mW)
(pF)
8
4
2
0
100
50
0
0
4
8
12
REVERSE BIAS VOLTAGE
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16
VR
20
0
(V)
25
50
75
AMBIENT TEMPERATURE
3
100
Ta
(℃ )
E,May,2015
SOT-563 Package Outline Dimensions
SOT-563 Suggested Pad Layout
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4
E,May,2015
SOT-563 Tape and Reel
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5
E,May,2015
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