BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features • • • • Switching and Amplifier High-Voltage: BC546, VCEO = 65 V Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number Marking Package Packing Method BC546ABU BC546A TO-92 3L Bulk BC546ATA BC546A TO-92 3L Ammo BC546BTA BC546B TO-92 3L Ammo BC546BTF BC546B TO-92 3L Tape and Reel BC546CTA BC546C TO-92 3L Ammo BC547ATA BC547A TO-92 3L Ammo BC547B BC547B TO-92 3L Bulk BC547BBU BC547B TO-92 3L Bulk BC547BTA BC547B TO-92 3L Ammo BC547BTF BC547B TO-92 3L Tape and Reel BC547CBU BC547C TO-92 3L Bulk BC547CTA BC547C TO-92 3L Ammo BC547CTFR BC547C TO-92 3L Tape and Reel BC548BU BC548 TO-92 3L Bulk BC548BTA BC548B TO-92 3L Ammo BC548CTA BC548C TO-92 3L Ammo BC549BTA BC549B TO-92 3L Ammo BC549BTF BC549B TO-92 3L Tape and Reel BC549CTA BC549C TO-92 3L Ammo BC550CBU BC550C TO-92 3L Bulk BC550CTA BC550C TO-92 3L Ammo © 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 www.fairchildsemi.com 1 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor April 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BC546 80 BC547 / BC550 50 BC548 / BC549 30 BC546 65 BC547 / BC550 45 BC548 / BC549 30 BC546 / BC547 6 BC548 / BC549 / BC550 5 Unit V V VEBO Emitter-Base Voltage IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C -65 to +150 °C TSTG Storage Temperature Range V Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit 15 nA ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 2 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 90 250 IC = 100 mA, IB = 5 mA 250 600 VBE(sat) Collector-Base Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 IC = 100 mA, IB = 5 mA 900 VBE(on) Base-Emitter On Voltage 110 VCE = 5 V, IC = 2 mA 580 800 660 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 100 MHz 300 Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 NF Noise Figure BC546 / BC547 / BC548 VCE = 5 V, IC = 200 μA, f = 1 kHz, RG = 2 kΩ BC549 / BC550 VCE = 5 V, IC = 200 μA, RG = 2 kΩ, f = 30 to 15000 MHz BC549 BC550 mV 700 720 Current Gain Bandwidth Product fT mV mV MHz 6.0 pF pF 2 10 1.2 4.0 1.4 4.0 1.4 3.0 dB hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 © 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 www.fairchildsemi.com 2 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor Absolute Maximum Ratings 100 IB = 400μA VCE = 5V IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 100 IB = 350μA IB = 300μA 80 IB = 250μA 60 IB = 200μA IB = 150μA 40 IB = 100μA 20 10 1 IB = 50μA 0.1 0.0 0 0 2 4 6 8 10 12 14 16 18 20 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 100 10 1 100 0.8 1.0 1.2 10000 IC = 10 IB VBE(sat) 1000 100 VCE(sat) 10 1000 1 IC[mA], COLLECTOR CURRENT 10 100 1000 IC[A], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 100 1000 fT, CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF], CAPACITANCE 0.6 Figure 2. Transfer Characteristic VCE = 5V 10 0.4 VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic 1 0.2 f=1MHz IE = 0 10 1 0.1 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product © 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 VCE = 5V www.fairchildsemi.com 3 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-92 (Bulk) D Figure 7. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 www.fairchildsemi.com 4 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) TO-92 (Ammo, Tape and Reel) Figure 8. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf. © 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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