BLV730 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 400V • Fast Switching RDS(ON) 1.0Ω Ω • Simple Drive Requirements ID 5.5A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 400 V VGS Gate-Source Voltage + 20 V Continuous Drain Current 5.5 A Continuous Drain Current ( TC=100 oC) 3.5 A Drain Current (pulsed) (Note 1) 22 A Power Dissipation 74 W Linear Derating Factor 0.59 W/℃ EAS Single Pulsed Avalanche Energy (Note2) 290 mJ IAR Avalanche Current 5.5 A EAR Repetitive Avalanche Energy 7.4 mJ ID IDM PD Tj TSDG Operating Junction Temperature Range Storage Temperature Range -55 to +150 o -55 to +150 o C C Thermal Characteristics Symbol Parameter Rth j-c Thermal Resistance, Junction to case Rth j-a Thermal Resistance, Junction to Ambient http://www.belling.com.cn Max. Max. Value Units 1.7 ℃/ W 62.5 ℃/ W 3/28/2007 Page 1/6 BLV730 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 400 - - V ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA - 0.54 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.3A - - 1.0 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V g fs Forward Transconductance(note3) VDS=15V, ID=3.3A 2.9 - - S IDSS Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ VDS=400V, VGS=0V - - 1 uA VDS=320V, VGS=0V - - 50 uA IGSS Gate-Source Leakage Current VGS= ± 20V - - ±100 nA Qg Total Gate Charge - - 38 nC Qgs Gate-Source Charge - - 5.7 nC Qgd Gate-Drain Charge VDD=320V ID=3.5A VGS=10V note3 - - 22 nC t (on) Turn-on Delay Time - 10 - ns tr Turn-on Rise Time - 15 - ns t (off) Turn-off Delay Time - 38 - ns tf Turn-off Fall Time - 14 - ns Ciss Input Capacitance - 700 - pF Coss Output Capacitance - 170 - pF Crss Reverse Transfer Capacitance - 64 - pF Min. Typ. Max. Units VDD=200V ID=3.5A RG=25Ω note3 VDS=25V VGS=0V f = 1MHz Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS Continuous Source Diode Forward Current - - 5.5 A ISM Pulsed Source Diode Forward Current (note1) - - 22 A VSD Forward On Voltage VGS=0V, IS=5.5A - - 2.0 V trr Reverse Recovery Time VGS=0V, IS=5.5A - 270 530 ns Qr r Reverse Recovery Charge dIF/dt = 100A/us - 1.0 2.2 uC 注： (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) L=16mH, Ias=5.5A，Vdd=50V，Rg=25Ω，staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2% http://www.belling.com.cn 3/28/2007 Page 2/6 BLV730 N-channel Enhancement Mode Power MOSFET Typical Characteristics Fig 1. Typical Output Characteristics Fig 3. Normalized Gate Threshold Voltage vs. Temperature Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Junction Temperature http://www.belling.com.cn 3/28/2007 Page 3/6 BLV730 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） ） Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 7. Gate Charge Characteristics Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 8. Capacitance Characteristics http://www.belling.com.cn 3/28/2007 Page 4/6 BLV730 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） ） Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve http://www.belling.com.cn 3/28/2007 Page 5/6 BLV730 N-channel Enhancement Mode Power MOSFET Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 12. Gate Charge Waveform Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit Fig 16. Unclamped Inductive Switching Waveforms http://www.belling.com.cn 3/28/2007 Page 6/6