NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage IB = 0 VCBO Collector- Emitter Voltage IE = 0 VEBO IC IB Emitter-Base Voltage Collector Current Base Current IC = 0 Pt Total Power Dissipation TJ TStg Junction Temperature Storage Temperature Value BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D 25°C case temperatur 25°C free aire temperatur Unit 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 -65 to +150 -65 to +150 °C °C Value Unit V V V A A W THERMAL CHARACTERISTICS Symbol Ratings RthJC Junction to Case Thermal Resistance 0.83 RthJA Junction to Free Air Thermal Resistance 35.7 23/10/2012 COMSET SEMICONDUCTORS °C/W 1|3 NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCEO(SUS) Collector-Emitter Sustaining Voltage (*) ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain (*) VCE(SAT) VBE(on) VEC Collector-Emitter saturation Voltage (1) Base-Emitter Voltage (*) Parallel Diode Forward Voltage ton Turn-on time toff Turn-off time Test Condition(s) Min Typ Max Unit BDW83 BDW83A IC=30 mA BDW83B IB=0 BDW83C BDW83D BDW83 IB=0, VCE=30 V IB=0, VCE=30 V BDW83A IB=0, VCE=40 V BDW83B IB=0, VCE=50 V BDW83C IB=0, VCE=60 V BDW83D IE= 0, VCB=45 V BDW83 IE= 0, VCB=60 V BDW83A IE= 0, VCB=80 V BDW83B IE= 0, VCB=100 V BDW83C IE= 0, VCB=120 V BDW83D IE= 0, VCB=45 V BDW83 Tcase = 150°C IE= 0, VCB=60 V BDW83A Tcase = 150°C IE= 0, VCB=80 V BDW83B Tcase = 150°C IE= 0, VCB=100 V BDW83C Tcase = 150°C IE= 0, VCB=120 V BDW83D Tcase = 150°C VEB=5.0 V, IC=0 IC=6 A , VCE=3.0 V IC=15 A , VCE=3.0 V IC=6 A , IB=12 mA IC=15 A , IB=150 mA IC=6 A , IB=3 A 45 60 80 100 120 - - V - - 1 mA - - 0.5 mA - - 5 750 100 - - 2 20 K 2.5 4 2.5 mA IE = 15 A , IE= 0 - - 3.5 V IC = 10 A, IB1 =-IB2=40 mA RL=3Ω; VBE(off) = -4.2V Duty Cycle≤2% - 0.9 - - 7 - COMSET SEMICONDUCTORS V µs (*) Pulse Duration = 300 µs, Duty Cycle <= 2% 23/10/2012 - 2|3 NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : 15.20 1.90 4.60 3.10 0.35 5.35 20.00 19.60 0.95 4.80 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter The centre pin is in electrical contact with the mounting tab. Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 23/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3