AON7450 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7450 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 100V 21A RDS(ON) (at VGS=10V) < 48mΩ RDS(ON) (at VGS = 8V) < 57mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View D Top View Bottom 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C ±25 V 13 IDM A 60 5.6 IDSM TA=70°C Units V 21 ID TC=100°C Maximum 100 A 4.5 Avalanche Current C IAS, IAR 18 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 16 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2: Mar. 2011 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 17 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 43 PD TC=100°C -55 to 150 Typ 30 60 2.4 www.aosmd.com °C Max 40 75 2.9 Units °C/W °C/W °C/W Page 1 of 7 AON7450 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.9 ID(ON) On state drain current VGS=10V, VDS=5V 60 TJ=55°C 50 VDS=0V, VGS= ±25V 100 VGS=10V, ID=7.8A 3.5 40 48 73 87 VGS=8V, ID=7.8A 45 57 VDS=5V, ID=7.8A 20 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 4.1 µA nA V A RDS(ON) TJ=125°C Units V VDS=100V, VGS=0V IDSS IS Max mΩ mΩ S 1 V 40 A pF 725 910 1090 65 95 125 pF 20 35 50 pF VGS=0V, VDS=0V, f=1MHz 0.4 0.8 1.2 Ω 12 16 20 nC VGS=10V, VDS=50V, ID=7.8A 4.2 5.3 6.4 nC 2.8 4.7 6.6 nC VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7.8A, dI/dt=500A/µs 12 17 22 Qrr Body Diode Reverse Recovery Charge IF=7.8A, dI/dt=500A/µs 42 60 78 18 VGS=10V, VDS=50V, RL=6.4Ω, RGEN=3Ω ns 6.5 ns 35 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Mar. 2011 www.aosmd.com Page 2 of 7 AON7450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 36 8.5V 7V 8V 10V 28 24 40 ID(A) 6.5 ID (A) VDS=5V 32 7.5V 50 30 6V 20 16 12 125°C 8 VGS=5.5V 10 20 4 0 0 0 1 2 3 4 5 6 7 8 9 0 10 2 70 6 8 10 Normalized On-Resistance 2.2 60 VGS=8V RDS(ON) (mΩ ) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 40 VGS=10V 30 2 VGS=10V ID=7.8A 1.8 1.6 1.4 VGS=8V ID=7.8A 1.2 17 5 2 10 1 0.8 20 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 90 1.0E+02 ID=7.8A 80 1.0E+01 40 70 1.0E+00 125°C IS (A) RDS(ON) (mΩ ) 25°C 60 125°C 1.0E-01 50 25°C 1.0E-02 40 1.0E-03 25°C 30 1.0E-04 20 0.0 4 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Mar. 2011 8 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON7450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=50V ID=7.8A 1200 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1000 800 600 400 Coss 2 Crss 200 0 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 18 0 40 60 80 100 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs 10µs RDS(ON) limited 10.0 100µs DC 1.0 1ms 160 Power (W) 100.0 ID (Amps) 20 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.9°C/W 40 Zθ JC Normalized Transient Thermal Resistance 10 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Mar. 2011 www.aosmd.com Page 4 of 7 AON7450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 10 TA=150°C TA=125°C 40 30 20 10 1 0 1 10 100 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 30 TA=25°C 25 1000 Power (W) Current rating ID(A) 25 20 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2: Mar. 2011 www.aosmd.com Page 5 of 7 AON7450 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30.00 80 25.00 20 20.00 16 25ºC Qrr 15.00 60 125ºC Irm 40 1.6 1.2 trr 25ºC 12 10.00 0.8 8 25ºC S 25ºC 20 5.00 4 0 0.00 0 0.4 125ºC 0 5 10 15 20 25 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 120 100 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25.00 Is=20A 30 2.5 Is=20A 125ºC 25 20.00 80 2 125ºC 20 10.00 125ºC 40 trr trr (ns) 1 10 Qrr 5.00 25ºC 20 25ºC 125º 0 0.00 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 2: Mar. 2011 0.5 S 5 Irm 0 1.5 25ºC 15 S 15.00 25ºC 60 Irm (A) Qrr (nC) 125ºC trr (ns) Qrr (nC) 100 Irm (A) 120 24 di/dt=800A/µs 125ºC di/dt=800A/µs S 140 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON7450 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Mar. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7