BUX10 ® HIGH POWER NPN SILICON TRANSISTOR ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 160 V V CEX Collector-emitter Voltage (V BE = - 1.5V) 160 V V CEO Collector-emitter Voltage (I B = 0) 125 V V EBO Emitter-base Voltage (I C = 0) 7 V Collector Current 25 A Collector Peak Current (t P < 10 ms) 30 A IC I CM IB P tot T stg Tj March 2003 Base Current Total Power Dissipation at T case Storage Temperature ≤ 25 o C Max Operating Junction Temperature 5 A 150 W -65 to 200 o C 200 o C 1/4 BUX10 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CEO Collector Cut-off Current (I B = 0) V CE = 100 V I CEX Collector Cut-off Current V CE = 160 V T case = 125 o C V CE = 160 V I EBO Emitter Cut-off Current (I C = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ. Max. Unit 1.5 mA V BE = -1.5V 1.5 mA V BE = -1.5V 6 mA 1 mA V EB = 5 V I C = 200 mA 125 V 7 V Emitter-Base Voltage (I C = 0) I E = 50 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 10 A I C = 20 A IB = 1 A IB = 2 A 0.3 0.7 0.6 1.2 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 20 A IB = 2 A 1.6 2 V h FE DC Current Gain I C = 10 A I C = 20 A V CE = 2 V V CE = 4 V I S/b Second Breakdown Collector Current V CE = 30 V V CE = 48 V t=1s t=1s 5 1 A A fT Transistor Frequency IC = 1 A f = 10MHz V CE =15 V 8 MHz t on Turn-on Time I C = 20 A V CC = 30V I B1 = 2 A ts tf Storage Time Fall Time I C = 20 A V CC = 30V Clamped E s/b Collector Current V clamp =125 V L = 500 µH V EBO ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 % 2/4 20 10 I B1 = - I B2 = 2A 20 60 0.5 1.5 µs 0.6 0.15 1.2 0.3 µs µs A BUX10 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 BUX10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4