Analogic AAT8303ITS-T1 20v p-channel power mosfet Datasheet

AAT8303
20V P-Channel Power MOSFET
General Description
Features
The AAT8303 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving
small outline J-lead package, performance superior to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
•
•
•
VDS(MAX) = -20V
ID(MAX) 1 = -10A @ 25°C
Low RDS(ON):
• 14 mΩ @ VGS = -4.5V
• 24 mΩ @ VGS = -2.5V
Applications
•
•
•
•
Top View
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Load Switches
Absolute Maximum Ratings
Symbol
VDS
VGS
D
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
(TA=25°C unless otherwise noted)
Description
Value
Drain-Source Voltage
Gate-Source Voltage
ID
Continuous Drain Current @ TJ=150°C
IDM
IS
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode)
PD
Maximum Power Dissipation
TJ, TSTG
Preliminary Information
TSOPJW-8 Package
°C
Typ
Max
Units
86
44
27
105
54
32
°C/W
°C/W
°C/W
TA = 25°C
TA = 70°C
1
1
TA = 25°C
TA = 70°C
1
Units
-20
±12
±10
±8
±48
-2.3
2.3
1.5
-55 to 150
Operating Junction and Storage Temperature Range
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
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Description
Junction-to-Ambient steady state
Junction-to-Ambient t<5 seconds
Junction-to-Foot 1
1
1
1
AAT8303
20V P-Channel Power MOSFET
Electrical Characteristics
Symbol Description
(TJ=25°C unless otherwise noted)
Conditions
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250µA
VGS=-4.5V, ID=-10A
RDS(ON)
Drain-Source ON-Resistance 2
VGS=-2.5V, ID=-7.6A
ID(ON)
On-State Drain Current 2
VGS=-4.5V, VDS=-5V (Pulsed)
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID=-250µA
IGSS
Gate-Body Leakage Current
VGS=±12V, VDS=0V
VGS=0V, VDS=-20V
IDSS
Drain Source Leakage Current
VGS=0V, VDS=-16V, TJ=70°C 3
gfs
Forward Transconductance 2
VDS=-5V, ID=-10A
Dynamic Characteristics 3
QG
Total Gate Charge
VDS=-10V, RD=1.0Ω, VGS=-4.5V
QGS
Gate-Source Charge
VDS=-10V, RD=1.0Ω, VGS=-4.5V
QGD
Gate-Drain Charge
VDS=-10V, RD=1.0Ω, VGS=-4.5V
tD(ON)
Turn-ON Delay
VDS=-10V, VGS=-4.5V, RD=1.0Ω,
tR
Turn-ON Rise Time
VDS=-10V, VGS=-4.5V, RD=1.0Ω,
tD(OFF)
Turn-OFF Delay
VDS=-10V, VGS=-4.5V, RD=1.0Ω,
tF
Turn-OFF Fall Time
VDS=-10V, VGS=-4.5V, RD=1.0Ω,
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage 2
VGS=0, IS=-10A
IS
Continuous Diode Current 1
Min
Typ
Max
11
18
14
24
-20
V
-48
-0.6
±100
-1
-5
31
RG=6Ω
RG=6Ω
RG=6Ω
RG=6Ω
Units
mΩ
A
V
nA
µA
S
36
5
13
10
72
78
108
nC
ns
-1.1
-2.3
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
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AAT8303
20V P-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Transfer Characteristics
Output Characteristics
48
5V
4.5V
40
4V
3.5V
48
3V
2.5V
32
ID (A)
32
IDS (A)
VD=VG
40
24
2V
24
16
16
25°C
-55°C
8
8
1.5V
0
0
0 .5
1
1 .5
2
125°C
0
2 .5
0
3
1
2
3
4
VGS (V)
VDS (V)
On-Resistance vs. Gate to Source Voltage
On-Resistance vs. Drain Current
0.06
0.04
ID = 10A
RDS(ON) (Ω)
RDS(ON) (Ω)
0.032
0.024
VGS = 2.5V
0.016
0.008
0.04
0.02
VGS = 4.5V
0
0
0
8
16
24
32
40
0
48
1
2
ID (A)
On-Resistance vs. Junction Temperature
0.5
VGS = 4.5V
ID = 10A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
5
ID = 250µA
0.4
VGS(th) Variance (V)
Normalized RDS(ON)
1.4
4
Threshold Voltage
1.6
1.5
3
VGS (V)
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-25
0
25
50
TJ (°C)
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75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJ (°C)
3
AAT8303
20V P-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Gate Charge
5
100
VD=10V
ID=10A
4
10
3
IS (A)
VGS (V)
Source-Drain Diode Forward Voltage
2
TJ = 25°C
TJ = 150°C
1
1
0
0
5
10
15
20
25
30
35
0.1
40
0
0 .2
0.4
QG, Charge (nC)
0 .6
0.8
1
1.2
VSD (V)
Capacitance
Single Pulse Power, Junction to Ambient
50
5000
40
Ciss
35
Power (W)
Capacitance (pF)
45
4000
3000
2000
Coss
25
20
15
10
1000
5
Crss
0
0.001
0
0
30
5
10
15
0.01
0.1
20
1
10
100
1000
Time (s)
VDS (V)
Normalized Effective
Transient Thermal Impedance
Transient Thermal Response, Junction to Ambient
10
1
.5
.2
.1
.02
0.1
.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
4
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AAT8303
20V P-Channel Power MOSFET
Ordering Information
Package
Marking1
Part Number (Tape and Reel)
TSOPJW-8
JXXYY
AAT8303ITS-T1
Note 1: XYY = assembly and date code.
Package Information
TSOPJW-8
2.40 ± 0.10
2.85 ± 0.20
0.325 ± 0.075
0.65 BSC 0.65 BSC 0.65 BSC
7°
0.055 ± 0.045
0.04 REF
0.15 ± 0.05
1.0175 ± 0.0925
0.9625 ± 0.0375
3.025 ± 0.075
0.010
0.45 ± 0.15
2.75 ± 0.25
All dimensions in millimeters.
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5
AAT8303
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
6
8303.2003.09.0.62
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