Vishay BYG23M Fast silicon mesa smd rectifier Datasheet

BYG23M
Vishay Telefunken
Fast Silicon Mesa SMD Rectifier
Features
D
D
D
D
D
Glass passivated junction
Low reverse current
High reverse voltage
Fast reverse recovery time
Wave and reflow solderable
Applications
15 811
Freewheeling diodes in SMPS and converters
Snubber diodes
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
tp=10ms, half sinewave
Average forward current
Tamb = 65°C
Junction and storage temperature range
Pulse energy in avalanche mode,
I(BR)R=1A
non repetitive (inductive load switch off)
Type
Symbol
VR=
VRRM
IFSM
IFAV
Tj=Tstg
ER
Value
1000
Unit
V
30
1.5
–55...+150
20
A
A
°C
mJ
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction case
Junction ambient
Document Number 86062
Rev. 1, 13-Aug-99
Test Conditions
mounted on epoxy–glass hard tissue,
17mm2 35mm Cu
mounted on epoxy–glass hard tissue,
50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3),
50mm2 35mm Cu
Symbol
RthJC
RthJA
Value
25
150
Unit
K/W
K/W
RthJA
125
K/W
RthJA
100
K/W
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BYG23M
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Breakdown voltage
Reverse recovery time
Test Conditions
IF=1.0A
IF=1.0A, TJ = 150°C
VR=VRRM
VR=VRRM, Tj=125°C
IR = 100 mA
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol
VF
VF
IR
IR
V(BR)R
trr
Min
Typ
Max
1.7
1.35
5
50
1000
75
Unit
V
V
mA
mA
V
ns
Characteristics (Tj = 25_C unless otherwise specified)
160
RthJA=
PR – Reverse Power Dissipation ( mW )
IF – Forward Current ( A )
100
10
Tj=150°C
Tj=25°C
1
0.1
140
VR = VRRM
125K/W
175K/W
120
100
100%
80
60
40
80%
20
0
25
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VF – Forward Voltage ( V )
16096
Figure 1. Max. Forward Current vs. Forward Voltage
50
75
100
125
150
Tj – Junction Temperature ( °C )
16094
Figure 3. Max. Reverse Power Dissipation vs.
Junction Temperature
VR = VR RM
half sinewave
1.4
1000
VR = VRRM
1.2
I R – Reverse Current ( mA )
I FAV– Average Forward Current ( A )
1.6
RthJA=
1.0
25K/W
0.8
125K/W
0.6
0.4
150K/W
0.2
100
10
0
0
16092
25
50
75
100
125
1
150
Tamb – Ambient Temperature ( °C )
25
16095
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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50
75
100
125
150
Tj – Junction Temperature ( °C )
Figure 4. Max. Reverse Current vs. Junction Temperature
Document Number 86062
Rev. 3, 09-Aug-99
BYG23M
CD – Diode Capacitance ( pF )
Vishay Telefunken
16093
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0.1
f=1MHz
TJ=25_C
1.0
10.0
100.0
VR – Reverse Voltage ( V )
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
14275
Document Number 86062
Rev. 1, 13-Aug-99
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BYG23M
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
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Document Number 86062
Rev. 3, 09-Aug-99
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