BYW51/F/G/FP/R-200 ® HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulation voltage = 2000 V DC Capacitance = 12 pF ■ ■ c u d ■ ■ A2 ■ (s) A1 2 e t le D PAK BYW51G-200 o s b O - t c u d o r P e A2 TO-220AB BYW51-200 K DESCRIPTION Dual center tap rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FP, D2PAK or I2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ) s t( K A1 o r P A2 A1 K ISOWATT220AB BYW51F-200 A2 K A1 I2PAK BYW51R-200 ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit 200 V 20 A Average forward current TO-220AB / D PAK Tc=120°C Per diode δ = 0.5 I2PAK Per device 10 A ISOWATT220AB Per diode 10 Per device 20 Per diode 10 t e l o VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current s b O IF(AV) 2 TO-220FPAB IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Maximum operating junction temperature August 2002 - Ed: 3E Tc=95°C Tc=85°C Per device tp=10ms sinusoidal 20 20 100 A - 65 to + 150 °C 150 °C 1/9 BYW51/F/G/FP/R-200 THERMAL RESISTANCES Symbol Rth (j-c) Parameter TO-220AB / D2PAK / I2PAK Junction to case ISOWATT220AB TO-220FPAB Rth (c) Coupling Value Unit Per diode 2.5 °C/W Total 1.4 Per diode 5.1 Total 4.05 Per diode 5.7 Total 4.6 TO-220AB / D2PAK / I2PAK 0.25 ISOWATT220AB 3.0 TO-220FPAB 3.5 °C/W When diodes 1 and 2 are used simultaneously : ∆Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Test Conditions Reverse leakage current Tj = 25°C Tj = 100°C VF ** Forward voltage drop Typ. o s b O - Max. Unit 15 µA 1 mA V Tj = 125°C IF = 8 A 0.85 Tj = 125°C IF = 16 A 1.05 Tj = 25°C IF = 16 A 1.15 ) s ( ct Pulse test :* tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % o r P Min. e t le VR = VRRM c u d ) s t( u d o To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.025 x IF2(RMS) r P e RECOVERY CHARACTERISTICS t e l o Symbol Test Conditions Typ. Max. IF = 0.5A IR = 1A Irr = 0.25A 25 IF = 1A VR = 30V dIF/dt = -50A/µs 35 Unit ns s b O Tj = 25°C tfr Tj = 25°C IF = 1A VFR = 1.1 x VF max dIF/dt = -50A/µs 15 ns VFP Tj = 25°C IF = 1A dIF/dt = -50A/µs 2 V trr 2/9 BYW51/F/G/FP/R-200 Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). PF(av)(W) IM(A) 14 δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 12 120 T 100 10 δ=1 80 δ=tp/T P=10W tp 8 60 6 P=15W 4 40 T P=5W 2 0 20 IF(av) (A) 0 1 2 3 4 5 6 7 δ=tp/T 8 9 δ tp 10 11 12 13 Fig. 3-1: Average forward current versus ambient temperature (δ = 0.5, D2PAK, TO-220AB). 0 0.0 0.1 0.2 e t le Rth(j-a)=Rth(j-c) o s b O 8 Rth(j-a)=15°C/W 6 0.6 0.7 0.8 0.9 1.0 ) s t( o r P Rth(j-a)=Rth(j-c) 10 8 0.5 c u d IF(av)(A) 12 10 0.4 Fig. 3-2: Average forward current versus ambient temperature (δ = 0.5, ISOWATT220AB, TO-220FPAB). IF(av)(A) 12 ISOWATT220AB TO-220FP 6 4 4 T 2 0 0.3 δ=tp/T 0 Tamb(°C) tp 25 50 75 o r P e c u d 100 (t s) 125 T 2 150 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (D2PAK, TO-220AB) t e l o bs 0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4-2: Non repetitive surge peak forward current versus overload duration (ISOWATT220AB). IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 Rth(j-a)=15°C/W IM(A) 80 O 70 60 Tc=25°C 50 Tc=25°C 40 Tc=75°C Tc=100°C t 1E-2 20 IM 10 t(s) δ=0.5 Tc=75°C 30 1E-1 1E+0 0 1E-3 Tc=100°C t t(s) δ=0.5 1E-2 1E-1 1E+0 3/9 BYW51/F/G/FP/R-200 Fig. 4-3: Non repetitive surge peak forward current versus overload duration (TO-220FPAB). Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (D2PAK, TO-220AB). IM(A) K=[Zth(j-c)/Rth(j-c)] 80 1.0 70 δ = 0.5 60 50 δ = 0.2 40 Tc=25°C 30 Tc=75°C 20 δ = 0.1 T IM Single pulse Tc=100°C 10 t(s) t δ=0.5 0 1E-3 1E-2 t(s) 1E-1 1E+0 Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB, TO-220FPAB). 0.1 1E-3 e t le 100.0 δ = 0.5 so 10.0 δ = 0.1 T ) s ( ct Single pulse t(s) tp 1E+0 c u d IFM(A) δ = 0.2 1E-1 ) s t( Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). K=[Zth(j-c)/Rth(j-c)] 1.0 δ=tp/T 1E-2 o r P Tj=125°C Tj=25°C b O - 1.0 1E+1 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 8: Reverse recovery charges versus dIF/dt (per diode). 0.1 1E-2 1E-1 δ=tp/T 1E+0 tp u d o r P e t e l o C(pF) Qrr(nC) s b O 100 500 F=1MHz Tj=25°C IF=IF(av) 90% confidence Tj=125°C 200 50 100 50 20 20 dIF/dt(A/µs) VR(V) 10 4/9 1 10 100 200 10 10 20 50 100 200 500 BYW51/F/G/FP/R-200 Fig. 9: Peak reverse recovery current versus dIF/dt (per diode). Fig. 10: Dynamic parameters versus junction temperature. Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C] IRM(A) 1.25 50 IF=IF(av) 90% confidence Tj=125°C 1.00 10 IRM 0.75 Qrr 0.50 Tj(°C) dIF/dt(A/µs) 1 10 20 50 100 200 500 0.25 0 25 50 e t le Rth(j-a) (°C/W) 70 60 50 ) s ( ct 40 30 20 10 0 u d o S(Cu) (cm²) 0 5 10 15 20 r P e 25 30 35 100 c u d Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) (D2PAK) . 80 75 125 ) s t( 150 o r P o s b O 40 t e l o s b O 5/9 BYW51/F/G/FP/R-200 PACKAGE MECHANICAL DATA TO-220AB (JEDEC compatible) REF. H2 A C A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Dia. L5 L7 Dia OPTIONAL L6 L2 L9 D F2 F1(x2) L4 M F E G1 G DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.30 4.60 0.169 0.181 1.22 1.32 0.048 0.052 2.40 2.72 0.094 0.107 0.33 0.70 0.013 0.028 0.61 0.93 0.024 0.037 1.14 1.70 0.045 0.067 1.14 1.70 0.045 0.067 4.95 5.15 0.195 0.202 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 Typ. 0.630 Typ. 13.00 14.00 0.512 0.551 2.65 2.95 0.104 0.116 14.80 15.75 0.583 0.620 6.20 6.60 0.244 0.260 3.40 3.94 0.134 0.155 2.60 Typ. 0.102 Typ. 3.75 3.89 0.148 0.153 c u d e t le PACKAGE MECHANICAL DATA I2PAK ) s ( ct u d o r P e E L2 t e l o bs O A c2 D L1 A1 b2 L b1 b e 6/9 c o s b O REF. A A1 b b1 b2 c c2 D e E L L1 L2 ) s t( o r P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.70 0.93 0.028 0.037 1.14 1.17 0.044 0.046 1.14 1.17 0.044 0.046 0.45 0.60 0.018 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 2.40 2.70 0.094 0.106 10.0 10.4 0.394 0.409 13.1 13.6 0.516 0.535 3.48 3.78 0.137 0.149 1.27 1.40 0.050 0.055 BYW51/F/G/FP/R-200 PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 G 4.88 5.28 0.192 L 15.00 15.85 L2 1.27 1.40 L3 1.40 M 2.40 so ) s ( ct 16.90 u d o r P e 10.30 t e l o bs e t le R V2 FOOT PRINT (in millimeters) D2PAK Inches 0.40 typ. 0° 8° 0.050 0.055 c u d o r P 1.75 3.20 0.590 ) s t( 0.409 0.208 0.624 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° b O - 5.08 1.30 3.70 8.90 O 7/9 BYW51/F/G/FP/R-200 PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS A B H Dia L6 L2 L7 L3 L5 D F1 L4 F2 F E G1 G PACKAGE MECHANICAL DATA ISOWATT220AB (JEDEC compatible) ct (s) o r P e t e l o s b O 8/9 du A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Millimeters Inches Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 e t le o s b O - REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam o r P c u d ) s t( DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.50 2.70 0.098 0.106 2.50 2.75 0.098 0.108 0.40 0.70 0.016 0.028 0.75 1.00 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 typ. 0.630 typ. 28.60 30.60 1.125 1.205 9.80 10.60 0.386 0.417 15.90 16.40 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 BYW51/F/G/FP/R-200 Ordering code Marking Package Weight Base qty Delivery mode BYW51-200 BYW51-200 TO220AB 2.2 g. 50 Tube BYW51F-200 BYW51F-200 ISOWATT220AB 2.08 g. 50 Tube BYW51G-200 BYW51G-200 D PAK 1.48 g. 50 Tube BYW51FP-200 BYW51FP-200 TO-220FPAB 2g 50 Tube 1.49 g 50 Tube BYW51R-200 ■ ■ ■ ■ ■ 2 BYW51R-200 2 I PAK Recommended torque value (TO-220AB): 0.8 N.m. Maximum torque value (TO-220AB): 1.0 N.m. Recommended torque value (ISOWATT220AB / TO-220FPAB): 0.55 N.m. Maximum torque value (ISOWATT220AB / TO-220FPAB): 0.70 N.m. Epoxy meets UL94,V0 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. 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